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For the carriers-crowded effect in vertical-cavity surface-emitting laser (VCSEL), the injected current passes mainly through the edge of the circular active region, which results in nonuniformity of the output power density and annular facula with a poor central intensity, especially in large aperture VCSEL. How to restrain carriers-crowded effect becomes a technique problem to develop electrically pumped high power large aperture VCSEL. High power 808 nm VCSEL is demonstrated by introducing a novel structure. And an output power of 0.3 W is achieved at 1 A at room temperature under continuous wave operation.
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Keywords:
- semiconductor laser /
- vertical-cavity surface-emitting laser /
- high power /
- large aperture
[1] Chen M, Guo X, Guan B L, Deng J, Dong L M, Shen G D 2006 Acta Phys. Sin. 55 5842 (in Chinese) [陈 敏、郭 霞、关宝璐、邓 军、董立闽、沈光地 2006 55 5842]
[2] Affolderbach C, Nagel A, Knappe S, Jung C, Wiedenmann D, Wynands R 2000 Appl. Phys. B 70 407
[3] Grabherr M, Miller M, Jager R 1998 IEEE J. Select. Top. Quantum Electron. 34 1227
[4] Miller M, Grabherr M, King R, Jager R, Michalzik R, Ebeling K J 2001 IEEE J. Select. Top. Quantum Electron. 7 210
[5] Zhang W L, Pan W, Luo B, Li X F, Zou X H, Wang M Y 2008 Chin. Phys. B 17 1821
[6] Huang X B, Xia G Q, Wu Z M 2010 Acta Phys. Sin. 59 3066 (in Chinese) [黄雪兵、夏光琼、吴正茂 2010 59 3066]
[7] Li H Q, Zhang J, Cui D F, Xun Y Z, Ning Y Q, Yan C L, Qin L, Liu Y, Wang L J, Cao J L 2004 Acta Phys. Sin. 53 2986 (in Chinese) [李惠青、张 杰、崔大复、许祖彦、宁永强、晏长岭、秦 莉、刘 云、王立军、曹健林 2004 53 2986]
[8] Gao J X, Song G F, Guo B S, Gan Q Q, Chen L H 2007 Acta Phys. Sin. 56 5827 (in Chinese) [高建霞、宋国峰、郭宝山、甘巧强、陈良惠 2007 56 5827]
[9] Chen J, Hangauer A, Strzoda R 2007 Appl. Phys. Lett. 91 141105
[10] Huang M C Y, Zhou Y, Chang-Hasnain C J 2008 Appl. Phys. Lett. 92 171108
[11] Petrolati E, Di Carlo A 2009 Appl. Phys. Lett. 94 091105
[12] Seurin J F, Xu G Y, Khalfin V, Miglo A, Wynn J D, Pradhan P, Ghosh C L, D’Asaro L A 2009 Proc. SPIE 7229 722903
[13] Hardley G R, Lear K L, Warren M E, Choquette K D, Scott J W, Corzine S W 1996 IEEE J.Quantum Electron. 32 607
[14] Wu J, Summers H D, Iordache G 2001 Proceedings of Conference on Lasers and Electro-Optics Chiba, Japan, May 6—11, 2001 p169
[15] Hao Y Q, Ma J L, Zhong J C, Zhao Y J, Wang X H, Qiao Z L 2009 Chinese Patent ZL200610104150.2 (in Chinese)[郝永芹、马建立、钟景昌、赵英杰、王晓华、乔忠良 2009 中国专利 ZL200610104150.2]
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[1] Chen M, Guo X, Guan B L, Deng J, Dong L M, Shen G D 2006 Acta Phys. Sin. 55 5842 (in Chinese) [陈 敏、郭 霞、关宝璐、邓 军、董立闽、沈光地 2006 55 5842]
[2] Affolderbach C, Nagel A, Knappe S, Jung C, Wiedenmann D, Wynands R 2000 Appl. Phys. B 70 407
[3] Grabherr M, Miller M, Jager R 1998 IEEE J. Select. Top. Quantum Electron. 34 1227
[4] Miller M, Grabherr M, King R, Jager R, Michalzik R, Ebeling K J 2001 IEEE J. Select. Top. Quantum Electron. 7 210
[5] Zhang W L, Pan W, Luo B, Li X F, Zou X H, Wang M Y 2008 Chin. Phys. B 17 1821
[6] Huang X B, Xia G Q, Wu Z M 2010 Acta Phys. Sin. 59 3066 (in Chinese) [黄雪兵、夏光琼、吴正茂 2010 59 3066]
[7] Li H Q, Zhang J, Cui D F, Xun Y Z, Ning Y Q, Yan C L, Qin L, Liu Y, Wang L J, Cao J L 2004 Acta Phys. Sin. 53 2986 (in Chinese) [李惠青、张 杰、崔大复、许祖彦、宁永强、晏长岭、秦 莉、刘 云、王立军、曹健林 2004 53 2986]
[8] Gao J X, Song G F, Guo B S, Gan Q Q, Chen L H 2007 Acta Phys. Sin. 56 5827 (in Chinese) [高建霞、宋国峰、郭宝山、甘巧强、陈良惠 2007 56 5827]
[9] Chen J, Hangauer A, Strzoda R 2007 Appl. Phys. Lett. 91 141105
[10] Huang M C Y, Zhou Y, Chang-Hasnain C J 2008 Appl. Phys. Lett. 92 171108
[11] Petrolati E, Di Carlo A 2009 Appl. Phys. Lett. 94 091105
[12] Seurin J F, Xu G Y, Khalfin V, Miglo A, Wynn J D, Pradhan P, Ghosh C L, D’Asaro L A 2009 Proc. SPIE 7229 722903
[13] Hardley G R, Lear K L, Warren M E, Choquette K D, Scott J W, Corzine S W 1996 IEEE J.Quantum Electron. 32 607
[14] Wu J, Summers H D, Iordache G 2001 Proceedings of Conference on Lasers and Electro-Optics Chiba, Japan, May 6—11, 2001 p169
[15] Hao Y Q, Ma J L, Zhong J C, Zhao Y J, Wang X H, Qiao Z L 2009 Chinese Patent ZL200610104150.2 (in Chinese)[郝永芹、马建立、钟景昌、赵英杰、王晓华、乔忠良 2009 中国专利 ZL200610104150.2]
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