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Yuan Ying-Kuo, Guo Wei-Ling, Du Zai-Fa, Qian Feng-Song, Liu Ming, Wang Le, Xu Chen, Yan Qun, Sun Jie. Applications of graphene transistor optimized fabrication process in monolithic integrated driving gallium nitride micro-light-emitting diode. Acta Physica Sinica,
2021, 70(19): 197801.
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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
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Feng Bo, Deng Biao, Liu Le-Gong, Li Zeng-Cheng, Feng Mei-Xin, Zhao Han-Min, Sun Qian. Effect of plasma surface treatment on embedded n-contact for GaN-based blue light-emitting diodes grown on Si substrate. Acta Physica Sinica,
2017, 66(4): 047801.
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Wang Guang-Xu, Chen Peng, Liu Jun-Lin, Wu Xiao-Ming, Mo Chun-Lan, Quan Zhi-Jue, Jiang Feng-Yi. Influence of etching AlN buffer layer on the surface roughening of N-polar n-GaN grown on Si substrate. Acta Physica Sinica,
2016, 65(8): 088501.
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica,
2015, 64(17): 177804.
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Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica,
2015, 64(18): 187801.
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Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
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Yue Qing-Yang, Kong Fan-Min, Li Kang, Zhao Jia. Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of the photonic crystals. Acta Physica Sinica,
2012, 61(20): 208502.
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Tang Yi-Dan, Shen Guang-Di, Guo Xia, Guan Bao-Lu, Jiang Wen-Jing, Han Jin-Ru. High performance resonant cavity light emitting diode with dielectric distributed Bragg reflectors. Acta Physica Sinica,
2012, 61(1): 018503.
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Chen Huan-Ting, Lü Yi-Jun, Gao Yu-Lin, Chen Zhong, Zhuang Rong-Rong, Zhou Xiao-Fang, Zhou Hai-Guang. The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip. Acta Physica Sinica,
2012, 61(16): 167104.
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica,
2012, 61(12): 127807.
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Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi. Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica,
2011, 60(7): 078503.
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
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Jiang Yang, Luo Yi, Wang Lai, Li Hong-Tao, Xi Guang-Yi, Zhao Wei, Han Yan-Jun. Influence of pillar-and hole-patterned sapphire substrates on MOVPE grown GaN bulk and LED structures. Acta Physica Sinica,
2009, 58(5): 3468-3473.
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Chen Jian, Li Xiao-Li, Li Hai-Hua, Wang Qing-Kang. Research of LED light extraction efficiency of photonic crystal with square and hexagonal lattice. Acta Physica Sinica,
2009, 58(9): 6216-6221.
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
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Xiong Chuan-Bing, Jiang Feng-Yi, Wang Li, Fang Wen-Qing, Mo Chun-Lan. The investigation on the interference phenomenon in electroluminescence spectrum of vertical structured InGaAlN multiple quantum well light-emitting diodes. Acta Physica Sinica,
2008, 57(12): 7860-7864.
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
doi: 10.7498/aps.55.1424
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