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InGaN/GaN triangular shaped multiple quantum wells (MQWs) grown on sapphire substrate were adopted as an active layer of light-emitting diodes (LEDs) by modulating In content in well layers. The temperature dependence of the normalized integrated photoluminescence (PL) intensity showed that the overlap of the electron and hole wave-functions of the LEDs with triangular shaped MQW is much higher than that of the LEDs with conventional rectangular MQW structures, which improves the internal quantum efficiency (IQE) to a certain degree. On the other hand, it was found that the blue shift of the peak energy as a function of injection current is improved for the device with triangular shaped MQW structure from the electroluminescence (EL) spectra of the two series devices. The comparison above indicates that the triangular MQW LEDs are more efficient and more stable.
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Keywords:
- metal organic chemical vapor deposition /
- InGaN/GaN multiple quantum wells /
- light-emitting diode /
- internal quantum efficiency
[1] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K 1997 Jpn. J. Appl. Phys. 36 L1568
[2] Crowell P A, Yong D K, Keller S, Hu E L, Awschalom D D 1998 Appl. Phys. Lett. 72 927
[3] Chichibu S, Azuhata T, Sota T, Nakamura S 1996 Appl. Phys. Lett. 69 4188
[4] Narukawa Y, Kawakami Y, Fujita S, Fujita S, Nakamura S 1997 Phys. Rev. B 55 R1938
[5] Li W J, Zhang B, Xu W L, Lu W 2009 Acta Phys. Sin. 58 3421 (in Chinese) [李为军、张 波、徐文兰、陆 卫 2009 58 3421]
[6] Hangleiter A 2000 J. Lumin. 87—89 130
[7] Kim M H, Schubert M F, Dai Q, Kin J K, Schubert E F, Piperk J, Park Y 2007 Appl.Phys.Lett. 91 183507
[8] Craven M D, Lim S H, Wu F, Speck J S, DenBaars S P 2002 Appl. Phys. Lett. 81 469
[9] Craven M D, Chakraborty A, Imer B, Wu F, Keller S, Mishra U K, Speck J S, DenBaars S P 2003 Phys. Stat. Sol. (c) 0 2132
[10] Hellman E S, Liliental-Weber Z, Buchanan D N E 1997 MRS Internet J. Nitride Semicond. Res. 2 30
[11] Schmidt M C, Kim K C, Farrell R M, Feezell D F, Cohen D A, Saito M, Fujito K, Speck J S, Denbaars S P, Nakamura S 2007 Jpn. J. Appl. Phys. 46 190
[12] Xing Y H, Deng J, Han J, Li J J, Shen G D 2009 Acta Phys. Sin. 58 590 (in Chinese) [邢艳辉、邓 军、韩 军、李建军、沈光地 2009 58 590]
[13] Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese) [邢艳辉、韩 军、刘建平、 邓 军、牛南辉、沈光地 2007 56 7295]
[14] Choi R J, Hahn Y B, Shim H W 2003 Appl. Phys. Lett. 82 2764
[15] Zhu L H, Liu B L 2009 Sol. St. Electr. 53 336
[16] Wang T C, Ko T S, Lu T C, Kuo H C, Gao R C, Tasy J D, Wang S C 2008 Phys. Stat. Sol. (c) 5 2158
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[1] Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyoku H, Sugimoto Y, Kozaki T, Umemoto H, Sano M, Chocho K 1997 Jpn. J. Appl. Phys. 36 L1568
[2] Crowell P A, Yong D K, Keller S, Hu E L, Awschalom D D 1998 Appl. Phys. Lett. 72 927
[3] Chichibu S, Azuhata T, Sota T, Nakamura S 1996 Appl. Phys. Lett. 69 4188
[4] Narukawa Y, Kawakami Y, Fujita S, Fujita S, Nakamura S 1997 Phys. Rev. B 55 R1938
[5] Li W J, Zhang B, Xu W L, Lu W 2009 Acta Phys. Sin. 58 3421 (in Chinese) [李为军、张 波、徐文兰、陆 卫 2009 58 3421]
[6] Hangleiter A 2000 J. Lumin. 87—89 130
[7] Kim M H, Schubert M F, Dai Q, Kin J K, Schubert E F, Piperk J, Park Y 2007 Appl.Phys.Lett. 91 183507
[8] Craven M D, Lim S H, Wu F, Speck J S, DenBaars S P 2002 Appl. Phys. Lett. 81 469
[9] Craven M D, Chakraborty A, Imer B, Wu F, Keller S, Mishra U K, Speck J S, DenBaars S P 2003 Phys. Stat. Sol. (c) 0 2132
[10] Hellman E S, Liliental-Weber Z, Buchanan D N E 1997 MRS Internet J. Nitride Semicond. Res. 2 30
[11] Schmidt M C, Kim K C, Farrell R M, Feezell D F, Cohen D A, Saito M, Fujito K, Speck J S, Denbaars S P, Nakamura S 2007 Jpn. J. Appl. Phys. 46 190
[12] Xing Y H, Deng J, Han J, Li J J, Shen G D 2009 Acta Phys. Sin. 58 590 (in Chinese) [邢艳辉、邓 军、韩 军、李建军、沈光地 2009 58 590]
[13] Xing Y H, Han J, Liu J P, Deng J, Niu N H, Shen G D 2007 Acta Phys. Sin. 56 7295 (in Chinese) [邢艳辉、韩 军、刘建平、 邓 军、牛南辉、沈光地 2007 56 7295]
[14] Choi R J, Hahn Y B, Shim H W 2003 Appl. Phys. Lett. 82 2764
[15] Zhu L H, Liu B L 2009 Sol. St. Electr. 53 336
[16] Wang T C, Ko T S, Lu T C, Kuo H C, Gao R C, Tasy J D, Wang S C 2008 Phys. Stat. Sol. (c) 5 2158
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