Progress of flexible organic non-volatile memory field-effect transistors

Chai Yu-Hua; Guo Yu-Xiu; Bian Wei; Li Wen; Yang Tao; Yi Ming-Dong; Fan Qu-Li; Xie Ling-Hai; Huang Wei

doi:10.7498/aps.63.027302

Abstract

Flexible organic non-volatile memory field-effect transistors (ONVMFETs) are promising candidates in the field of flexible organic electronic devices, which can be used in flexible radio frequency tags, memories, integrated circuits and large-area displays, because of their remarkable advantages such as flexibility, lightweight, low cost and large-area organic electronics. On the basis of the introduction of the development of flexible ONVMFETs in terms of substrates, structures and characteristics, the classification of flexible ONVMFETs is summarized. Meanwhile, we discuss the effects of mechanical stress and temperature on the performance of flexible ONVMFET. Finally, some prospects as well as the challenges are pointed out.

Keywords:

Authors and contacts

1.
School of Electrical and Information, Northeast Agricultural University, Haerbin 150030, China;
2.
Institute of Advanced Materials, Nanjing University of Posts and Telecommunacations, Nanjing 210023, China;
3.
Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 60876010, 61136003, 51173081, 21274064), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant No. BK2012431), the Natural Science Foundation of Heilongjiang Province, China (Grant No. ZD201303), the Heilongjiang Planned Projects for Postdoctoral Research Funds, China (Grant No. BH-Z07233), the Natural Science Foundation of Jiangsu Province, China (Grant No. ZD201303), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Staring Foundation of Nanjing University of Posts and Telecommunications, China (Grants No. NY211022).

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[32]	Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2012 Chin. Phys. B 20 017306
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[34]	Zhou Y, Han S T, Xu Z X, Roy V A L 2013 Nanoscale 5 1972
[35]	Han S T, Zhou Y, Xu Z X, Huang L B, Yang X B, Roy V A L 2012 Adv. Mater. 24 3556
[36]	Han S T, Zhou Y, Wang C D, He L F, Zhang W J, Roy V A L 2013 Adv. Mater. 25 872
[37]	Gao X, She X J, Liu C H, Sun Q J, Liu J, Wang S D 2013 Appl. Phys. Lett. 102 023303
[38]	She X J, Liu C H, Zhang J Y, Gao X, Wang S D 2013 Appl. Phys. Lett. 102 053303
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[40]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 43303
[41]	Luo W G 1999 Physics 28 216 (in Chinese) [罗维根 1999 物理 28 216
[42]	Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S, Leeuw D M D 2005 Nat. Mater. 4 243
[43]	Naber R C G, Asadi K, Blom P W M, Leeuw D M D, Boer B D 2010 Adv. Mater. 22 933
[44]	Unni K N N, Bettignies R D, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823
[45]	Lee G G, Tokumitsu E, Yoon S M, Fujisaki Y, Yoon J W, Ishiwara H 2011 Appl. Phys. Lett. 99 012901
[46]	Khan M A, Bhansali U S, Alshareef H N 2012 Adv. Mater. 24 2165
[47]	Hwang S K, Bae I, Kim R H, Park C 2012 Adv. Mater. 24 5910
[48]	Gerhard-Multhaupt R, Gross B, Sessler G M 1987 Top. Appl. Phys. 33 383
[49]	Singh T B, Marjanovic N, Matt G J, Sariciftci N S, Schwodiauer R, Bauer S 2004 Appl. Phys. Lett. 85 5409
[50]	Wu W P, Zhang H L, Wang Y, Ye S H, Guo Y L, Di C A, Yu G, Zhu D B, Liu Y Q 2008 Adv. Funct. Mater. 18 2593
[51]	Wang W, Shi J W, Guo S X, Zhang H M, Quan B F, Ma D G 2006 Chin. Phys. Lett. 23 3108
[52]	Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309
[53]	Yi H T, Payne M M, Anthony J E, Podzorov V 2012 Nat. Commun. 2263 1
[54]	Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108
[55]	Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[56]	Meena J S, Chu M C, Wu C S, Liang J C, Chang Y C, Ravipati S, Chang F C, Ko F H 2012 Org. Electron. 13 721
[57]	Gleskova H, Wagner S, Suo Z 1999 Appl. Phys. Lett. 5 3011
[58]	Sekitani S, Iba S, Kato Y, Noguchi Y, Someya T 2005 Appl. Phys. Lett. 87 173502
[59]	Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015
[60]	Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047
[61]	Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308
[62]	Yoon U M, Yang S, Park S H K 2011 J. Electrochem. Soc. 158 H892
[63]	Sekitani T, Iba S, Kato Y, Someya T 2004 Appl. Phys. Lett. 85 3902
[64]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 043303
[65]	Pan F, Qian X R, Huang L Z, Wang H B, Yan D H 2011 Chin. Phys. Lett. 28 078504
[66]	Tian X Y, Xu Z, Zhao S L, Zhang F J, Yuan G C, Xu X R 2009 Chin. Phys. B 18 3568
[67]	Ji T, Jung S, Varadan V K 2008 Org. Electron. 9 895
[68]	Ye R, Baba M, Suzuki K, Ohshi Y, Mori K 2003 J. Appl. Phys. 42 4473
[69]	Dong G F, Liu Q D, Wang L D, Qiu Y 2005 Chin. Phys. Lett. 22 2027

Cited By

[1]	Dong J, Chai Y H, Zhao Y Z, Shi W W, Guo Y X, Yi M D, Xie L H, Huang W 2013 Acta Phys. Sin. 62 047301 (in Chinese) [董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维 2013 62 047301]
[2]	Martins R, Ferreira I, Barquinha P, Correia N, Gonçalves G, Ferreira I, Dias C, Fortunato E 2011 Proc. of SPIE 7603 760314
[3]	He X D, Liao X M, Jiang S B, Song Z X 2011 Chem. Inter. 3 36 (in Chinese) [何晓东, 廖学明, 姜胜斌, 宋志祥 2011 化工中间体 3 36]
[4]	Song H C, Lu J 2003 Synth. Tech. Appl. 18 17(in Chinese) [宋厚春, 陆军 2003 合成技术及应用 18 17]
[5]	Liu N Q, Gu W, Qiao Q, Tian Y G 2004 J. Univ. Tech. (Nat. Sci. Ed.) 25 7 (in Chinese) [刘乃青, 顾巍, 乔迁, 田一光 2004 长春工业大学学报(自然科学版) 25 7]
[6]	Cui Y L, Zhang Z H, Jiang L, Ou X M 2005 Plastics Sci. Technol. 3 50 (in Chinese) [崔永丽, 张仲华, 江利, 欧雪梅 2005 塑料科技 3 50]
[7]	Guo Y L, Yu Gui, Liu Y Q 2010 Adv. Mater. 22 4427
[8]	Huang W, Mi B X, Gao Z Q 2011 Organic Electronics (Beijing: Science Press) p175 (in Chinese) [黄维, 密保秀, 高志强 2011 有机电子学(北京: 科学出版社) 第175页]
[9]	Zaumseil J, Sirringhaus H 2007 Chem. Rev. 107 1296
[10]	Richards T J, Sirringhaus H 2007 J. Appl. Phys. 102 094510
[11]	Chang C C, Pei Z, Chan Y J 2008 Appl. Phys. Lett. 93 143302
[12]	Lee K H, Lee G, Lee K, Oh M S, Im S, Yoon S M 2009 Adv. Mater. 21 4287
[13]	Zhou Y, Han S T, Xu Z X, Roy V A L 2012 Nanotechnology 23 344014
[14]	Baeg K J, Khim D, Kim J, Yang B D, Kang M, Jung S W, You I K, Kim D Y, Noh Y Y 2012 Adv. Funct. Mater. 22 2915
[15]	Gupta R K, Ying G, Srinivasan M P, Lee P S 2012 J. Phys. Chem. B 116 9784
[16]	Ortiz R P, Facchetti A, Marks T J 2010 Chem. Rev. 110 205
[17]	Roberts M E, Queralto N, Mannsfeld S C B, Reinecke B N, Knoll W, Bao Z N 2009 Chem. Mater. 21 2292
[18]	Wang W, Ma D G 2010 Chin. Phys. Lett. 27 018503
[19]	Leong W L, Lee P S, Mhaisalkar S G, Chen T P, Dodabalapur A 2007 Appl. Phys. Lett. 90 042906
[20]	Chang M F, Lee P T, McAlister S P, Chin A L 2008 Appl. Phys. Lett. 93 233302
[21]	Han K S, Park Y, Han G, Lee B H, Lee K H, Son D H, Im S, Sung M M 2012 J. Mater. Chem. 22 19007
[22]	Sekitani T, Yokota T, Zschieschang U, Klauk H, Bauer S, Takeuchi K, Takamiya M, Sakurai T, Someya T 2009 Science 326 1516
[23]	Kaltenbrunner M, Stadler P, Schwödiauer R, Hassel A W, Sariciftci N S, Bauer S 2011 Adv. Mater. 23 4892
[24]	Gupta R K, Kusuma D Y, Lee P, Srinivasan M P 2011 Acs. Appl. Mater. Inter. 3 4619
[25]	Baeg K J, Noh Y Y, Sirringhaus H, Kim D Y 2010 Adv. Funct. Mater. 20 224
[26]	Kim S J, Lee J S 2010 Nano Lett. 10 2884
[27]	Khan H U, Roberts M E, Knoll W, Bao Z N 2011 Chem. Mater. 23 1946
[28]	Kim S J, Song J M, Lee J S 2011 J. Mater. Chem. 21 14516
[29]	Yu X G, Yu J S, Huang W, Zeng H J 2012 Chin. Phys. B 21 117307
[30]	Zhang H, Mi B X, Li X, Gao Z Q, Zhao L, Huang W 2013 Chin. Phys. Lett. 30 028501
[31]	Tian H J, Cheng X M, Zhao G, Liang X Y, Du B Q, Wu F 2012 Chin. Phys. Lett. 29 098503
[32]	Sun Q J, Xu Z, Zhao S L, Zhang F J, Gao L Y 2012 Chin. Phys. B 20 017306
[33]	Zhao G, Cheng X M, Tian H J, Du B Q, Liang X Y 2011 Chin. Phys. Lett. 28 127203
[34]	Zhou Y, Han S T, Xu Z X, Roy V A L 2013 Nanoscale 5 1972
[35]	Han S T, Zhou Y, Xu Z X, Huang L B, Yang X B, Roy V A L 2012 Adv. Mater. 24 3556
[36]	Han S T, Zhou Y, Wang C D, He L F, Zhang W J, Roy V A L 2013 Adv. Mater. 25 872
[37]	Gao X, She X J, Liu C H, Sun Q J, Liu J, Wang S D 2013 Appl. Phys. Lett. 102 023303
[38]	She X J, Liu C H, Zhang J Y, Gao X, Wang S D 2013 Appl. Phys. Lett. 102 053303
[39]	She X J, Liu C H, Sun Q J, Liu J, Gao X, Wang S D 2012 Org. Electron. 13 1908
[40]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 43303
[41]	Luo W G 1999 Physics 28 216 (in Chinese) [罗维根 1999 物理 28 216
[42]	Naber R C G, Tanase C, Blom P W M, Gelinck G H, Marsman A W, Touwslager F J, Setayesh S, Leeuw D M D 2005 Nat. Mater. 4 243
[43]	Naber R C G, Asadi K, Blom P W M, Leeuw D M D, Boer B D 2010 Adv. Mater. 22 933
[44]	Unni K N N, Bettignies R D, Dabos-Seignon S, Nunzi J M 2004 Appl. Phys. Lett. 85 1823
[45]	Lee G G, Tokumitsu E, Yoon S M, Fujisaki Y, Yoon J W, Ishiwara H 2011 Appl. Phys. Lett. 99 012901
[46]	Khan M A, Bhansali U S, Alshareef H N 2012 Adv. Mater. 24 2165
[47]	Hwang S K, Bae I, Kim R H, Park C 2012 Adv. Mater. 24 5910
[48]	Gerhard-Multhaupt R, Gross B, Sessler G M 1987 Top. Appl. Phys. 33 383
[49]	Singh T B, Marjanovic N, Matt G J, Sariciftci N S, Schwodiauer R, Bauer S 2004 Appl. Phys. Lett. 85 5409
[50]	Wu W P, Zhang H L, Wang Y, Ye S H, Guo Y L, Di C A, Yu G, Zhu D B, Liu Y Q 2008 Adv. Funct. Mater. 18 2593
[51]	Wang W, Shi J W, Guo S X, Zhang H M, Quan B F, Ma D G 2006 Chin. Phys. Lett. 23 3108
[52]	Jedaa A, Halik M 2009 Appl. Phys. Lett. 95 103309
[53]	Yi H T, Payne M M, Anthony J E, Podzorov V 2012 Nat. Commun. 2263 1
[54]	Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108
[55]	Suo Z, Ma E Y, Gleskova H, Wagner S 1999 Appl. Phys. Lett. 74 1177
[56]	Meena J S, Chu M C, Wu C S, Liang J C, Chang Y C, Ravipati S, Chang F C, Ko F H 2012 Org. Electron. 13 721
[57]	Gleskova H, Wagner S, Suo Z 1999 Appl. Phys. Lett. 5 3011
[58]	Sekitani S, Iba S, Kato Y, Noguchi Y, Someya T 2005 Appl. Phys. Lett. 87 173502
[59]	Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015
[60]	Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047
[61]	Song K, Noh J, Jun T, Jung Y, Kang H Y, Moon J 2010 Adv. Mater. 22 4308
[62]	Yoon U M, Yang S, Park S H K 2011 J. Electrochem. Soc. 158 H892
[63]	Sekitani T, Iba S, Kato Y, Someya T 2004 Appl. Phys. Lett. 85 3902
[64]	Ren X C, Wang S M, Leung C W, Yan F, Chan P K L 2011 Appl. Phys. Lett. 99 043303
[65]	Pan F, Qian X R, Huang L Z, Wang H B, Yan D H 2011 Chin. Phys. Lett. 28 078504
[66]	Tian X Y, Xu Z, Zhao S L, Zhang F J, Yuan G C, Xu X R 2009 Chin. Phys. B 18 3568
[67]	Ji T, Jung S, Varadan V K 2008 Org. Electron. 9 895
[68]	Ye R, Baba M, Suzuki K, Ohshi Y, Mori K 2003 J. Appl. Phys. 42 4473
[69]	Dong G F, Liu Q D, Wang L D, Qiu Y 2005 Chin. Phys. Lett. 22 2027

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Vol. 63, Issue 2 - 2014-01-20

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