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Solar-blind deep-ultraviolet (UV) photodetectors (PDs) based on the super-wide bandgap semiconductor material Ga2O3 is one of the hot topics of current research, but how to prepare high-performance Ga2O3-based solar-blind PDs in the field of flexible and transparent optoelectronics still faces challenges. In this work, an amorphous Ga2O3 film with high transmittance is grown on a flexible mica substrate by using the radio frequency magnetron sputtering technology. On this basis, using AZO as an electrode material, a transparent metal-semiconductor-metal (MSM) structured solar-blind deep ultraviolet photodetector based amorphous Ga2O3 film is fabricated, and the performance of PD in the planar state and after multiple bending are systematically compared and analyzed. The results show that the amorphous Ga2O3 based transparent PD has ultra-high visible light transparency and shows good solar-blind ultraviolet photoelectric characteristics. The responsivity of the PD under 254 nm light is 2.69 A/W, and the response time and the recovery time are 0.14 s and 0.31 s, respectively. After bending 300 times, the PD has a photoresponse behavior similar to its planar state, and the performance of the PD has no obvious attenuation phenomenon, showing good flexibility and stability. This work proves that AZO can be used as the electrode material of the next generation of flexible and visible light transparent Ga2O3 based photodetectors, and provides a reference for developing the high-performance flexible and transparent solar-blind deep ultraviolet photodetectors.
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Keywords:
- Ga2O3 thin film /
- amorphous /
- solar-blind ultraviolet photodetector /
- transparent /
- flexible
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图 1 柔性衬底云母上沉积的Ga2O3薄膜 (a) XRD图谱; (b) Raman散射光谱; (c) Ga 2p核心能级谱; (d) O 1s核心能级谱; (e) 紫外可见光透射光谱(插图为样品放置于LOGO上的照片); (d) (αhν)2随光子能量(hν)的变化关系
Figure 1. (a) The XRD pattern, (b) Raman scattering spectra, (c) Ga 2p core level spectra, (d) O 1s core level spectra, (e) optical transmittance spectra (the photograph of the as-grown Ga2O3 film is depicted in the inset) and (f) the variation of (αhν)2 with photon energy (hν) of the Ga2O3 film deposited on flexible mica substrate, respectively.
图 2 平面状态下非晶态Ga2O3薄膜基柔性透明日盲探测器: (a) MSM型器件示意图; (b) 置于LOGO上的实物照片; (c) 在黑暗条件下, 365和254 nm光照下的I-V曲线(对数坐标); (d) 在–0.10−0.15 V偏置电压内的I-V曲线放大图, 插图为5 V偏压下光照强度与光电流之间的关系; (e) 黑暗条件下的能带示意图; (f) 254 nm光照下的能带示意图
Figure 2. (a) The schematic diagram of the MSM photodetector; (b) the photograph of the Ga2O3 PD; (c) I-V characteristics in dark, under 365 and 254 nm illumination (in a logarithmic coordinate); (d) the enlarged view of the I-V characteristics at a bias voltage of –0.10 to 0.15 V, and the inset shows the relationship between the light intensity and photocurrent under 5 V bias; (e) schematic energy band diagrams in dark; (f) schematic energy band diagrams under 254 nm light illumination of the flexible transparent solar-blind photodetector based on amorphous Ga2O3 films deposited on mica substrate, respectively.
图 3 平面状态下非晶态Ga2O3薄膜基柔性透明日盲探测器 (a) 在254和365 nm光照下的I-t特性曲线; (b) 254 nm光照下的上升/衰减边缘的放大视图和相应的指数拟合
Figure 3. (a) Time-dependence photocurrent characteristics under the 254 and 365 nm illumination; (b) the enlarged view of the rise/decay edges and the corresponding exponential fitting under 254 nm illumination of the flexible transparent solar-blind photodetector based on amorphous Ga2O3 films deposited on mica substrate, respectively.
图 4 非晶态Ga2O3薄膜基柔性透明日盲探测器在曲率半径 r = 7.5 mm条件下, 经300次弯曲后器件性能 (a) 弯曲实验下柔性装置的原位照片; (b) 在黑暗条件下, 365和254 nm光照下的I-V特性曲线(对数坐标); (c) 光照强度与光电流之间的关系; (d) 在–0.10−0.15 V偏置电压内的I-V特性曲线放大图; (e) 在254和365 nm光照下的I-t特性曲线; (f) 254 nm光照下的上升/衰减边缘的放大视图和相应的指数拟合
Figure 4. (a) An in-situ photograph of the flexible PD under a bending test; (b) I-V characteristics in dark, under 365 and 254 nm illumination (in a logarithmic coordinate); (c) the relationship between the light intensity and photocurrent; (d) the enlarged view of the I-V characteristics at a bias voltage of –0.10 to 0.15 V; (e) time-dependence photocurrent characteristics under the 254 and 365 nm illumination; (f) the enlarged view of the rise/decay edges and the corresponding exponential fitting under 254 nm illumination of the flexible transparent solar-blind photodetector based on amorphous Ga2O3 films after bending 300 cycles with r = 7.5 mm, respectively.
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[1] Li Y B, Tokizono T, Liao M Y, Zhong M, Koide Y, Yamada I, Delaunay J J 2010 Adv. Funct. Mater. 20 3972
Google Scholar
[2] Chen X H, Ren F F, Gu S L, Ye J D 2019 Photonics Res. 7 381
Google Scholar
[3] Wang S L, Sun H L, Zeng X H, Ungar D, Guo D Y, Shen J Q, Li A P, Li C R, Tang W H 2019 J. Alloys Compd. 787 133
Google Scholar
[4] Guo D Y, Su Y L, Shi H Z, Li P G, Zhao N, Ye J H, Wang S L, Liu A P, Chen Z, Li C R, Tang W H 2018 ACS Nano 12 12827
Google Scholar
[5] Li P G, Shi H Z, Chen K, Guo D Y, Cui W, Zhi Y S, Wang S L, Wu Z Z, Chen Z W, Tang W H 2017 J. Mater. Chem. C 5 10562
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[6] Chen Y R, Zhang Z W, Jiang H, Li Z M, Miao G Q, Song H 2018 J. Mater. Chem. C. 6 4936
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[7] Chen X, Liu K W, Wang X, Li B H, Zhang Z Z, Xie X H, Shen D Z 2017 J. Mater. Chem. C 5 10645
Google Scholar
[8] Lu Y J, Lin C N, Shan C X 2018 Adv. Opt. Mater. 6 1800359
Google Scholar
[9] Guo D Y, Wu Z P, Li P G, An Y H, Liu H, Guo X C, Yan Y, Wang G F, Sun C L, Li L H, Tang W H 2014 Opt. Mater. Express 4 1067
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[10] Kong W Y, Wu G A, Wang K Y, Zhang T F, Zou Y F, Wang D D, Luo L B 2016 Adv. Mater. 28 10725
Google Scholar
[11] Luan S Z, Dong L P, Jia R X 2019 J. Cryst. Growth 505 74
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[12] Wang J, Ye L J, Wang X, Zhang H, Li L, Kong C, Li W J 2019 J. Alloys Compd. 803 9
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[13] Du X J, Li Z, Luan C N, Wang W G, Wang M X, Feng X J, Xiao H D, Ma J 2015 J. Mater. Sci. 50 3252
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[14] Pratiyush A S, Krishnamoorthy S, Solanke S V, Xia Z B, Muralidharan R, Rajan S, and Nath B 2017 Appl. Phys. Lett. 110 221107
Google Scholar
[15] Chen X H, Han S, Lu Y M, Cao P J, Liu W J, Zeng Y X, Jia F, Xu W Y, Liu X K, Zhu D L 2018 J. Alloys Compd. 747 869
Google Scholar
[16] Arora K, Goel N, Kumar M, Kumaret Mal 2018 ACS Photonics 5 2391
Google Scholar
[17] Du J Y, Xing J, Ge C, Liu H, Liu P Y, Hao H Y, Dong J J, Zheng Z Y, Gao H 2016 J. Phys. D:Appl. Phys. 49 425105
Google Scholar
[18] Chen X H, Ren F F, Ye J D, Gu S L 2020 Semicond. Sci. Technol. 35 023001
Google Scholar
[19] Yadav A, Upadhyaya A, Gupta S K, Verma A S, Negi C M S 2019 AIP Conf. Proc. 2142 150022
Google Scholar
[20] Li Z, Xu Y, Zhang J Q, Cheng Y L, Chen D Z, Feng Q, Xu S R, Zhang Y C, Zhang J C, Hao Y, Zhang C F 2019 IEEE Photonics J. 11 1
Google Scholar
[21] Xiao S Y, Deng Y, Chen Z Y, Wang Y H, Yu J, Tang W H, Tang W H, Wu Z P 2020 J. Phys. D:Appl. Phys. 53 484004
Google Scholar
[22] Lee P, Lee J, Lee H, Yeo J, Hong S, Nam K H, Lee D, Lee S S, Koo S H 2012 Adv. Mater. 24 3326
Google Scholar
[23] Huang Z, Ke S, Zhou J, Zhao Y, Huang W. Chen S, Li C 2021 Chin. Phys. B 30 037303
Google Scholar
[24] Kumar N, Arora K, Kumar M 2019 J. Phys. D:Appl. Phys. 52 335
Google Scholar
[25] Qi H, Xia X, Zhou C, Xiao P, Wang Y, Deng Y 2020 J. Mater. Sci.-Mater. Electron. 31 3042
Google Scholar
[26] Taruta S, Ichinose T, Yamaguchi T, Kitajima K 2006 J. Non-cryst. Solids 352 5556
Google Scholar
[27] Gao Q, Wu X, Fan Y, Du C 2016 Ceram. Int. 42 6595
Google Scholar
[28] Chen Y, Fan L, Fang Q, Xu W, Chen S, Zan G B, Hui R, Li S, Zou C W 2017 Nano Energy. 31 144
Google Scholar
[29] Ramana C V, Rubio E J, Barraza C D, Ramana C V, Rubio E J, Barraza C D, Miranda G A, McPeak S, Kotru S, Grant J T 2014 J. Appl. Phys. 115 043508
Google Scholar
[30] Wang J, Xiong Y Q, Ye L J, Li W J, Qin G P, Ruan H B, Zhang H, Fang L, Kong C Y, Li H L 2021 Opt. Mater. 112 110808
Google Scholar
[31] Manandhar S, Ramana C V 2017 Appl. Phys. Lett. 110 061902
Google Scholar
[32] 郭道友, 李培刚, 陈政委, 吴 真平, 唐为华 2019 68 078501
Google Scholar
Guo D Y, Li P G, Chen Z W, Wu Z P, Tang W H 2019 Act. Phys. Sin. 68 078501
Google Scholar
[33] Qian L X, Wu Z H, Zhang Y Y, Lai P T, Liu X Z, Li Y R 2017 ACS Photonics 4 2203
Google Scholar
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Google Scholar
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Google Scholar
[36] Guo X C, Hao N H, Guo D Y, Wu Z P, An Y H, Chu X L, Li L H, Li P G, Lei M, Tang W H 2016 J. Alloys Compd. 660 136
Google Scholar
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Google Scholar
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Google Scholar
[39] Rafique S, Han L, Zhao H 2017 Phys. Status Solidi A 214 1700063
Google Scholar
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Google Scholar
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Google Scholar
[42] Feng W, Wang X, Zhang J, Wang L F, Zheng W, Hu P A, Cao W W, Yang B 2014 J. Mater. Chem. C 2 3254
Google Scholar
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