Logical integration device for two-dimensional semiconductor transition metal sulfide

Li Wei-Sheng; Zhou Jian; Wang Han-Chen; Wang Shu-Xian; Yu Zhi-Hao; Li Song-Lin; Shi Yi; Wang Xin-Ran

doi:10.7498/aps.66.218503

Abstract

The semiconductor industry has experienced exponential growth for more than 50 years, following the Moore's Law. However, traditional microelectronic devices are currently facing challenges such as high energy consumption and the short-channel effect. As an alternative, two-dimensional layered materials show the ability to restrain the carriers in a 1 nm physical limit, and demonstrate high electron mobility, mutable bandgap, and topological singularity, which will hopefully give birth to revolutionary changes in electronics. The transition metal dichalcogenide (TMDC) is regarded as a prospective candidate, since it has a large bandgap (typically about 1-2 eV for a monolayer) and excellent manufacture compatibility. Here in this paper, we review the most recent progress of two-dimensional TMDC and achievements in logic integration, especially focusing on the following key aspects:charge transport, carrier mobility, contact resistance and integration. We also point out the emerging directions for further research and development.

Keywords:

Authors and contacts

1.
National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China

Corresponding author: Wang Xin-Ran, xrwang@nju.edu.cn

Funds: Project support by the National Natural Science Foundation of China (Grant Nos. 61325020, 61521001) and the National Basic Research Program of China (Grant Nos. 2013CBA01604, 2015CB351900).

References

[1]	Lange K, Muller-Seitz G, Sydow J, Windeler A 2013 Res. Policy 42 647
[2]	Liu Q, Vinet M, Gimbert J, Loubet N 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p9.2.1
[3]	Mistry K, Allen C, Auth C, Beattie B 2007 Electron Devices Meeting, 2007. IEDM 2007. IEEE International Washington, DC, USA, December 10-12, 2007 p247
[4]	Welser J, Hoyt J L, Takagi S, Gibbons J F 1995 Electron Devices Meeting, 1994. IEDM'94. Technical Digest., International San Francisco, USA, December 11-14, 1994 p373
[5]	Welser J, Hoyt J L, Gibbons J F 1994 IEEE Electron. Dev. Lett. 15 100
[6]	Radisavljevic B, Kis A 2013 Nat. Mater. 12 815
[7]	Dennard R H, Gaensslen F H, Rideout V L, Bassous E, Leblanc A R 1974 IEEE J. Solid-St. Circ. 9 256
[8]	Castellanosgomez A 2016 Nat. Photon. 10 202
[9]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[10]	Li X, Wang X, Zhang L, Lee S, Dai H 2008 Science 319 1229
[11]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[12]	Elias D C, Nair R R, Mohiuddin T M, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K, Novoselov K S 2009 Science 323 610
[13]	Jariwala D, Sangwan V K, Lauhon L J, Marks T J, Hersam M C 2014 ACS Nano 8 1102
[14]	Wang L, Chen Z, Dean C R, Taniguchi T, Watanabe K, Brus L E, Hone J 2012 ACS Nano 6 9314
[15]	Lang M, He L, Xiu F, Yu X, Tang J, Wang Y, Kou X, Jiang W, Fedorov A V, Wang K L 2012 ACS Nano 6 295
[16]	Wilson J A, Yoffe A D 1969 Adv. Phys. 18 193
[17]	Mak K F, He K, Shan J, Heinz T F 2012 Nat. Nanotechnol. 7 494
[18]	Chiu M H, Zhang C, Shiu H W, Chuu C P, Chen C H, Chang C Y S, Chen C H, Chou M Y, Shih C K, Li L J 2015 Nat. Commun. 6 7666
[19]	Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho C H, Huang Y S, Cao Z, Wang L, Li A, Zeng J, Song F, Wang X, Shi Y, Yuan H, Hwang H Y, Cui Y, Miao F, Xing D 2015 Nat. Commun. 6 6991
[20]	Wang Y, Liu E, Liu H, Pan Y, Zhang L, Zeng J, Fu Y, Wang M, Xu K, Huang Z, Wang Z, Lu H Z, Xing D, Wang B, Wan X, Miao F 2016 Nat. Commun. 7 13142
[21]	Castro Neto A H 2001 Phys. Rev. Lett. 86 4382
[22]	Schaibley J R, Yu H Y, Clark G, Rivera P, Ross J S, Seyler K L, Yao W, Xu X D 2016 Nat. Rev. Mater. 1 16055
[23]	Liu Y, Weiss N O, Duan X D, Cheng H C, Huang Y, Duan X F 2016 Nat. Rev. Mater. 1 16042
[24]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[25]	Kuc A, Zibouche N, Heine T 2011 Phys. Rev. B 83 245213
[26]	Xiao D, Liu G B, Feng W, Xu X, Yao W 2012 Phys. Rev. Lett. 108 196802
[27]	Yan R H, Ourmazd A, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[28]	Schwierz F 2010 Nat. Nanotechnol. 5 487
[29]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C, Wong H P, Javey A 2016 Science 354 99
[30]	Yu Z H, Ong Z Y, Li S L, Xu J B, Zhang G, Zhang Y W, Shi Y, Wang X R 2017 Adv. Funct. Mater. 27 1604093
[31]	Kaasbjerg K, Thygesen K S, Jacobsen K W 2012 Phys. Rev. B 85 115317
[32]	Zhang W X, Huang Z S, Zhang W L, Li Y R 2014 Nano Res. 7 1731
[33]	Chen M C, Lin C Y, Li K H, Li L J, Chen C H, Chuang C H, Lee M D, Chen Y J, Hou Y F, Lin C H 2014 Electron Devices Meeting (IEDM), 2014 IEEE International San Francisco, USA, December 15-17, 2014 p33.5.1
[34]	Li K S, Wu B W, Li L J, Li M Y, Cheng C C K, Hsu C L, Lin C H, Chen Y J, Chen C C, Wu C T 2016 VLSI Technology, 2016 IEEE Symposium on Honolulu, USA, June 14-16, 2016 p1
[35]	Xu X D, Yao W, Xiao D, Heinz T F 2014 Nat. Phys. 10 343
[36]	Ye Z L, Sun D Z, Heinz T F Joensen P, Frindt R F, Morrison S R 1986 Mater. Res. Bull. 21 457
[37]	Joensen P, Frindt R F, Morrison S R 1986 Mater. Res.Bull. 21 457
[38]	Ghatak S, Pal A N, Ghosh A 2011 ACS Nano 5 7707
[39]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[40]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[41]	Wachter S, Polyushkin D K, Bethge O, Mueller T 2017 Nat. Commun. 8 14948
[42]	Lee Y H, Zhang X Q, Zhang W, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320
[43]	Lin Y C, Zhang W, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[44]	Ling X, Lee Y H, Lin Y, Fang W, Yu L, Dresselhaus M S, Kong J 2014 Nano Lett. 14 464
[45]	Dumcenco D, Ovchinnikov D, Marinov K, Lazic P, Gibertini M, Marzari N, Lopez Sanchez O, Kung Y C, Krasnozhon D, Chen M W, Bertolazzi S, Gillet P, Fontcuberta i Morral A, Radenovic A, Kis A 2015 ACS Nano 9 4611
[46]	Shaw J C, Zhou H L, Chen Y, Weiss N O, Liu Y, Huang Y, Duan X F 2014 Nano Res. 7 511
[47]	Wang X, Gong Y, Shi G, Chow W L, Keyshar K, Ye G, Vajtai R, Lou J, Liu Z, Ringe E, Tay B K, Ajayan P M 2014 ACS Nano 8 5125
[48]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[49]	Liu K K, Zhang W, Lee Y H, Lin Y C, Chang M T, Su C Y, Chang C S, Li H, Shi Y, Zhang H, Lai C S, Li L J 2012 Nano Lett. 12 1538
[50]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[51]	Wang X, Feng H, Wu Y, Jiao L 2013 J. Am. Chem. Soc. 135 5304
[52]	Chen W, Zhao J, Zhang J, Gu L, Yang Z, Li X, Yu H, Zhu X, Yang R, Shi D, Lin X, Guo J, Bai X, Zhang G 2015 J. Am. Chem. Soc. 137 15632
[53]	Chen J, Zhao X, Tan S J, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum T C, Loh K P 2017 J. Am. Chem. Soc. 139 1073
[54]	Li S L, Tsukagoshi K, Orgiu E, Samori P 2016 Chem. Soc. Rev. 45 118
[55]	Schmidt H, Giustiniano F, Eda G 2015 Chem. Soc. Rev. 44 7715
[56]	Butler S Z, Hollen S M, Cao L, Cui Y, Gupta J A, Gutierrez H R, Heinz T F, Hong S S, Huang J, Ismach A F, Johnston-Halperin E, Kuno M, Plashnitsa V V, Robinson R D, Ruoff R S, Salahuddin S, Shan J, Shi L, Spencer M G, Terrones M, Windl W, Goldberger J E 2013 ACS Nano 7 2898
[57]	Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye P, Duan X 2016 ACS Nano 10 4895
[58]	Allain A, Kang J, Banerjee K, Kis A 2015 Nat. Mater. 14 1195
[59]	Pham V P, Yeom G Y 2016 Adv. Mater. 28 9024
[60]	Chhowalla M, Jena D, Zhang H 2016 Nat. Rev. Mater. 1 16052
[61]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotechnol. 7 699
[62]	Yu Z, Ong Z Y, Pan Y, Cui Y, Xin R, Shi Y, Wang B, Wu Y, Chen T, Zhang Y W, Zhang G, Wang X 2016 Adv. Mater. 28 547
[63]	Cui Y, Xin R, Yu Z, Pan Y, Ong Z Y, Wei X, Wang J, Nan H, Ni Z, Wu Y, Chen T, Shi Y, Wang B, Zhang G, Zhang Y W, Wang X 2015 Adv. Mater. 27 5230
[64]	Fleischauer P D, Bauer R 1987 Asle Trans. 30 160
[65]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[66]	Moore B T, Ferry D K 1980 J. Appl. Phys. 51 2603
[67]	Fischetti M V, Neumayer D A, Cartier E A 2001 J. Appl. Phys. 90 4587
[68]	Veres J, Ogier S D, Leeming S W, Cupertino D C, Khaffaf S M 2003 Adv. Funct. Mater. 13 199
[69]	Hulea I N, Fratini S, Xie H, Mulder C L, Iossad N N, Rastelli G, Ciuchi S, Morpurgo A F 2006 Nat. Mater. 5 982
[70]	Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206
[71]	DaSilva A M, Zou K, Jain J K, Zhu J 2010 Phys. Rev. Lett. 104 236601
[72]	Ando T, Fowler A B, Stern F 1982 Rev. Mod. Phys. 54 437
[73]	Sarma S D, Adam S, Hwang E, Rossi E 2011 Rev. Mod. Phys. 83 407
[74]	Ong Z Y, Fischetti M V 2013 Phys. Rev. B 88 165316
[75]	Amani M, Chin M L, Birdwell A G, Oregan T P 2013 Appl. Phys. Lett. 102 193107
[76]	Yu Z, Pan Y, Shen Y, Wang Z, Ong Z Y, Xu T, Xin R, Pan L, Wang B, Sun L, Wang J, Zhang G, Zhang Y W, Shi Y, Wang X 2014 Nat. Commun. 5 5290
[77]	Qiu H, Xu T, Wang Z, Ren W, Nan H, Ni Z, Chen Q, Yuan S, Miao F, Song F, Long G, Shi Y, Sun L, Wang J, Wang X 2013 Nat. Commun. 4 2642
[78]	Fuhr J D, Saul A, Sofo J O 2004 Phys. Rev. Lett. 92 026802
[79]	Lu C P, Li G, Mao J, Wang L M, Andrei E Y 2014 Nano Lett. 14 4628
[80]	Zhou W, Zou X, Najmaei S, Liu Z, Shi Y, Kong J, Lou J, Ajayan P M, Yakobson B I, Idrobo J C 2013 Nano Lett. 13 2615
[81]	Moses P G, Hinnemann B, Topse H, Nrskov J K 2007 J. Catal. 248 188
[82]	And J F P, Payen E 2003 J. Phys. Chem. B 107 4057
[83]	Voiry D, Yamaguchi H, Li J, Silva R, Alves D C, Fujita T, Chen M, Asefa T, Shenoy V B, Eda G, Chhowalla M 2013 Nat. Mater. 12 850
[84]	Karunadasa H I, Montalvo E, Sun Y J, Majda M, Long J R, Chang C J 2012 Science 335 698
[85]	Zhu W, Low T, Lee Y H, Wang H, Farmer D B, Kong J, Xia F, Avouris P 2014 Nat. Commun. 5 3087
[86]	Toshihiro K, Ryo Y, Kohei U 2012 Self‐Assembled Monolayer (SAM) (Weinheim: Wiley‐VCH Verlag GmbH Co. KGaA)
[87]	Schreiber F 2000 Structure and Growth of Self-assembling Monolayers (Chicago: University of Chicago Press)
[88]	Ulman A 1996 Chem. Rev. 96 1533
[89]	Wang X, Xu J B, Wang C, Du J, Xie W 2011 Adv. Mater. 23 2464
[90]	Li Y, Xu C Y, Hu P, Zhen L 2013 ACS Nano 7 7795
[91]	Najmaei S, Zou X, Er D, Li J, Jin Z, Gao W, Zhang Q, Park S, Ge L, Lei S, Kono J, Shenoy V B, Yakobson B I, George A, Ajayan P M, Lou J 2014 Nano Lett. 14 1354
[92]	Burson K M, Cullen W G, Adam S, Dean C R, Watanabe K, Taniguchi T, Kim P, Fuhrer M S 2013 Nano Lett. 13 3576
[93]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, Hone J 2010 Nat. Nanotechnol. 5 722
[94]	Wang L, Gao Y, Wen B, Han Z, Taniguchi T, Watanabe K, Koshino M, Hone J, Dean C R 2015 Science 350 1231
[95]	Meric I, Dean C R, Petrone N, Wang L, Hone J, Kim P, Shepard K L 2013 Proc. IEEE 101 1609
[96]	Shiue R J, Gao Y, Wang Y, Peng C, Robertson A D, Efetov D K, Assefa S, Koppens F H, Hone J, Englund D 2015 Nano Lett. 15 7288
[97]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O, Huang Y, Duan X 2015 Nano Lett. 15 3030
[98]	Chen X, Wu Z, Xu S, Wang L, Huang R, Han Y, Ye W, Xiong W, Han T, Long G, Wang Y, He Y, Cai Y, Sheng P, Wang N 2015 Nat. Commun. 6 6088
[99]	Qiu H, Pan L J, Yao Z N, Li J J, Shi Y, Wang X R 2012 Appl. Phys. Lett. 100 123104
[100]	Lembke D, Kis A 2012 ACS Nano 6 10070
[101]	Sangwan V K, Arnold H N, Jariwala D, Marks T J, Lauhon L J, Hersam M C 2013 Nano Lett. 13 4351
[102]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[103]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[104]	Popov I, Seifert G, Tomnek D 2012 Phys. Rev. Lett. 108 156802
[105]	Liu W, Kang J, Cao W, Sarkar D, Khatami Y, Jena D, Banerjee K 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p19.4. 1
[106]	Kang J, Sarkar D, Liu W, Jena D, Banerjee K 2012 Electron Devices Meeting (IEDM), 2012 IEEE International San Francisco, USA, December 10-13, 2012 p17.4.1
[107]	Kang J H, Liu W, Sarkar D, Jena D, Banerjee K 2014 Phys. Rev. X 4 031005
[108]	Liu W, Sarkar D, Kang J, Cao W, Banerjee K 2015 ACS Nano 9 7904
[109]	Kang J H, Liu W, Banerjee K 2014 Appl. Phys. Lett. 104 093106
[110]	Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung P Y, Tieckelmann R, Tsai W, Hobbs C, Ye P D 2014 Nano Lett. 14 6275
[111]	Fang H, Chuang S, Chang T C, Takei K, Takahashi T, Javey A 2012 Nano Lett. 12 3788
[112]	Fang H, Tosun M, Seol G, Chang T C, Takei K, Guo J, Javey A 2013 Nano Lett. 13 1991
[113]	Du Y, Liu H, Neal A T, Si M, Peide D Y 2013 IEEE Electron. Dev. Lett. 34 1328
[114]	Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu Y S, Hettick M, Kang J S, McDonnell S, Santosh K C, Guo J, Cho K, Wallace R M, Javey A 2014 ACS Nano 8 10808
[115]	Kiriya D, Tosun M, Zhao P, Kang J S, Javey A 2014 J. Am. Chem. Soc. 136 7853
[116]	Rai A, Valsaraj A, Movva H C, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register L F, Tutuc E, Banerjee S K 2015 Nano Lett. 15 4329
[117]	Mcclellan C J, Yalon E, Smithe K K H, Suryavanshi S V, Pop E 2017 Device Research Conference (DRC), 2017 75th Annual South Bend, USA, June 25-28, 2017 p1
[118]	Liu H, Si M, Deng Y, Neal A T, Du Y, Najmaei S, Ajayan P M, Lou J, Ye P D 2014 ACS Nano 8 1031
[119]	Baugher B W, Churchill H O, Yang Y, Jarillo-Herrero P 2013 Nano Lett. 13 4212
[120]	Guo Y, Han Y, Li J, Xiang A, Wei X, Gao S, Chen Q 2014 ACS Nano 8 7771
[121]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[122]	Li S L, Komatsu K, Nakaharai S, Lin Y F, Yamamoto M, Duan X, Tsukagoshi K 2014 ACS Nano 8 12836
[123]	English C D, Shine G, Dorgan V E, Saraswat K C, Pop E 2016 Nano Lett. 16 3824
[124]	Wang J, Yao Q, Huang C W, Zou X, Liao L, Chen S, Fan Z, Zhang K, Wu W, Xiao X, Jiang C, Wu W W 2016 Adv. Mater. 28 8302
[125]	Kappera R, Voiry D, Yalcin S E, Jen W, Acerce M, Torrel S, Branch B, Lei S D, Chen W B, Najmaei S, Lou J, Ajayan P M, Gupta G, Mohite A D, Chhowalla M 2014 APL Mater. 2 092516
[126]	Lee G H, Cui X, Kim Y D, Arefe G, Zhang X, Lee C H, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J 2015 ACS Nano 9 7019
[127]	Leong W S, Luo X, Li Y, Khoo K H, Quek S Y, Thong J T 2015 ACS Nano 9 869
[128]	Stokbro K, Engelund M, Blom A 2012 Phys. Rev. B 85 165442
[129]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2014 Nano Lett. 14 3594
[130]	Chuang H J, Chamlagain B, Koehler M, Perera M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2016 Nano Lett. 16 1896
[131]	Dankert A, Langouche L, Kamalakar M V, Dash S P 2014 ACS Nano 8 476
[132]	Chen J R, Odenthal P M, Swartz A G, Floyd G C, Wen H, Luo K Y, Kawakami R K 2013 Nano Lett. 13 3106
[133]	Lee S, Tang A, Aloni S, Wong H S 2016 Nano Lett. 16 276
[134]	Cui X, Shih E M, Jauregui L A, Chae S H, Kim Y D, Li B, Seo D, Pistunova K, Yin J, Park J H, Choi H J, Lee Y H, Watanabe K, Taniguchi T, Kim P, Dean C R, Hone J C 2017 Nano Lett. 17 4781
[135]	Yu L, Lee Y H, Ling X, Santos E J, Shin Y C, Lin Y, Dubey M, Kaxiras E, Kong J, Wang H, Palacios T 2014 Nano Lett. 14 3055
[136]	Amani M, Burke R A, Proie R M, Dubey M 2015 Nanotechnology 26 115202
[137]	Yu W J, Li Z, Zhou H, Chen Y, Wang Y, Huang Y, Duan X 2013 Nat. Mater. 12 246
[138]	Pezeshki A, Hosseini Shokouh S H, Jeon P J, Shackery I, Kim J S, Oh I K, Jun S C, Kim H, Im S 2016 ACS Nano 10 1118
[139]	Pu J, Funahashi K, Chen C H, Li M Y, Li L J, Takenobu T 2016 Adv. Mater. 28 4111
[140]	Huang J, Somu S, Busnaina A 2012 Nanotechnology 23 335203
[141]	Sachid A B, Tosun M, Desai S B, Hsu C Y, Lien D H, Madhvapathy S R, Chen Y Z, Hettick M, Kang J S, Zeng Y, He J H, Chang E Y, Chueh Y L, Javey A, Hu C 2016 Adv. Mater. 28 2547
[142]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, Ye P D 2014 ACS Nano 8 4033
[143]	Su Y, Kshirsagar C U, Robbins M C, Haratipour N, Koester S J 2016 2d Mater. 3 011006
[144]	Jeon P J, Kim J S, Lim J Y, Cho Y, Pezeshki A, Lee H S, Yu S, Min S W, Im S 2015 ACS Appl. Mater. Inter. 7 22333
[145]	Cho A J, Park K C, Kwon J Y 2015 Nanoscale Res. Lett. 10 115
[146]	Yu C H, Fan M L, Yu K C, Hu V P H, Su P, Chuang C T 2016 IEEE Trans. Electron Dev. 63 625
[147]	Kshirsagar C U, Xu W, Su Y, Robbins M C, Kim C H, Koester S J 2016 ACS Nano 10 8457
[148]	Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang D W, Zhou P, Xiu F 2015 ACS Nano 9 612
[149]	Chen M C, Li K S, Li L J, Lu A Y, Li M Y, Chang Y H, Lin C H, Chen Y J, Hou Y F, Chen C C 2015 Electron Devices Meeting (IEDM), 2015 IEEE International Washington, DC, USA, December 7-9, 2015 p32.2.1
[150]	Xu K, Chen D, Yang F, Wang Z, Yin L, Wang F, Cheng R, Liu K, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[151]	Nourbakhsh A, Zubair A, Sajjad R N, Tavakkoli K G A, Chen W, Fang S, Ling X, Kong J, Dresselhaus M S, Kaxiras E, Berggren K K, Antoniadis D, Palacios T 2016 Nano Lett. 16 7798
[152]	Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X, Wang G, Xie G, Yang R, Shi D, Zhang G 2017 Adv. Mater. 2017 1702522

Cited By

[1]	Lange K, Muller-Seitz G, Sydow J, Windeler A 2013 Res. Policy 42 647
[2]	Liu Q, Vinet M, Gimbert J, Loubet N 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p9.2.1
[3]	Mistry K, Allen C, Auth C, Beattie B 2007 Electron Devices Meeting, 2007. IEDM 2007. IEEE International Washington, DC, USA, December 10-12, 2007 p247
[4]	Welser J, Hoyt J L, Takagi S, Gibbons J F 1995 Electron Devices Meeting, 1994. IEDM'94. Technical Digest., International San Francisco, USA, December 11-14, 1994 p373
[5]	Welser J, Hoyt J L, Gibbons J F 1994 IEEE Electron. Dev. Lett. 15 100
[6]	Radisavljevic B, Kis A 2013 Nat. Mater. 12 815
[7]	Dennard R H, Gaensslen F H, Rideout V L, Bassous E, Leblanc A R 1974 IEEE J. Solid-St. Circ. 9 256
[8]	Castellanosgomez A 2016 Nat. Photon. 10 202
[9]	Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[10]	Li X, Wang X, Zhang L, Lee S, Dai H 2008 Science 319 1229
[11]	Zhang Y, Tang T T, Girit C, Hao Z, Martin M C, Zettl A, Crommie M F, Shen Y R, Wang F 2009 Nature 459 820
[12]	Elias D C, Nair R R, Mohiuddin T M, Morozov S V, Blake P, Halsall M P, Ferrari A C, Boukhvalov D W, Katsnelson M I, Geim A K, Novoselov K S 2009 Science 323 610
[13]	Jariwala D, Sangwan V K, Lauhon L J, Marks T J, Hersam M C 2014 ACS Nano 8 1102
[14]	Wang L, Chen Z, Dean C R, Taniguchi T, Watanabe K, Brus L E, Hone J 2012 ACS Nano 6 9314
[15]	Lang M, He L, Xiu F, Yu X, Tang J, Wang Y, Kou X, Jiang W, Fedorov A V, Wang K L 2012 ACS Nano 6 295
[16]	Wilson J A, Yoffe A D 1969 Adv. Phys. 18 193
[17]	Mak K F, He K, Shan J, Heinz T F 2012 Nat. Nanotechnol. 7 494
[18]	Chiu M H, Zhang C, Shiu H W, Chuu C P, Chen C H, Chang C Y S, Chen C H, Chou M Y, Shih C K, Li L J 2015 Nat. Commun. 6 7666
[19]	Liu E, Fu Y, Wang Y, Feng Y, Liu H, Wan X, Zhou W, Wang B, Shao L, Ho C H, Huang Y S, Cao Z, Wang L, Li A, Zeng J, Song F, Wang X, Shi Y, Yuan H, Hwang H Y, Cui Y, Miao F, Xing D 2015 Nat. Commun. 6 6991
[20]	Wang Y, Liu E, Liu H, Pan Y, Zhang L, Zeng J, Fu Y, Wang M, Xu K, Huang Z, Wang Z, Lu H Z, Xing D, Wang B, Wan X, Miao F 2016 Nat. Commun. 7 13142
[21]	Castro Neto A H 2001 Phys. Rev. Lett. 86 4382
[22]	Schaibley J R, Yu H Y, Clark G, Rivera P, Ross J S, Seyler K L, Yao W, Xu X D 2016 Nat. Rev. Mater. 1 16055
[23]	Liu Y, Weiss N O, Duan X D, Cheng H C, Huang Y, Duan X F 2016 Nat. Rev. Mater. 1 16042
[24]	Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A 2011 Nat. Nanotechnol. 6 147
[25]	Kuc A, Zibouche N, Heine T 2011 Phys. Rev. B 83 245213
[26]	Xiao D, Liu G B, Feng W, Xu X, Yao W 2012 Phys. Rev. Lett. 108 196802
[27]	Yan R H, Ourmazd A, Lee K F 1992 IEEE Trans. Electron Dev. 39 1704
[28]	Schwierz F 2010 Nat. Nanotechnol. 5 487
[29]	Desai S B, Madhvapathy S R, Sachid A B, Llinas J P, Wang Q, Ahn G H, Pitner G, Kim M J, Bokor J, Hu C, Wong H P, Javey A 2016 Science 354 99
[30]	Yu Z H, Ong Z Y, Li S L, Xu J B, Zhang G, Zhang Y W, Shi Y, Wang X R 2017 Adv. Funct. Mater. 27 1604093
[31]	Kaasbjerg K, Thygesen K S, Jacobsen K W 2012 Phys. Rev. B 85 115317
[32]	Zhang W X, Huang Z S, Zhang W L, Li Y R 2014 Nano Res. 7 1731
[33]	Chen M C, Lin C Y, Li K H, Li L J, Chen C H, Chuang C H, Lee M D, Chen Y J, Hou Y F, Lin C H 2014 Electron Devices Meeting (IEDM), 2014 IEEE International San Francisco, USA, December 15-17, 2014 p33.5.1
[34]	Li K S, Wu B W, Li L J, Li M Y, Cheng C C K, Hsu C L, Lin C H, Chen Y J, Chen C C, Wu C T 2016 VLSI Technology, 2016 IEEE Symposium on Honolulu, USA, June 14-16, 2016 p1
[35]	Xu X D, Yao W, Xiao D, Heinz T F 2014 Nat. Phys. 10 343
[36]	Ye Z L, Sun D Z, Heinz T F Joensen P, Frindt R F, Morrison S R 1986 Mater. Res. Bull. 21 457
[37]	Joensen P, Frindt R F, Morrison S R 1986 Mater. Res.Bull. 21 457
[38]	Ghatak S, Pal A N, Ghosh A 2011 ACS Nano 5 7707
[39]	Radisavljevic B, Whitwick M B, Kis A 2011 ACS Nano 5 9934
[40]	Wang H, Yu L, Lee Y H, Shi Y, Hsu A, Chin M L, Li L J, Dubey M, Kong J, Palacios T 2012 Nano Lett. 12 4674
[41]	Wachter S, Polyushkin D K, Bethge O, Mueller T 2017 Nat. Commun. 8 14948
[42]	Lee Y H, Zhang X Q, Zhang W, Chang M T, Lin C T, Chang K D, Yu Y C, Wang J T, Chang C S, Li L J, Lin T W 2012 Adv. Mater. 24 2320
[43]	Lin Y C, Zhang W, Huang J K, Liu K K, Lee Y H, Liang C T, Chu C W, Li L J 2012 Nanoscale 4 6637
[44]	Ling X, Lee Y H, Lin Y, Fang W, Yu L, Dresselhaus M S, Kong J 2014 Nano Lett. 14 464
[45]	Dumcenco D, Ovchinnikov D, Marinov K, Lazic P, Gibertini M, Marzari N, Lopez Sanchez O, Kung Y C, Krasnozhon D, Chen M W, Bertolazzi S, Gillet P, Fontcuberta i Morral A, Radenovic A, Kis A 2015 ACS Nano 9 4611
[46]	Shaw J C, Zhou H L, Chen Y, Weiss N O, Liu Y, Huang Y, Duan X F 2014 Nano Res. 7 511
[47]	Wang X, Gong Y, Shi G, Chow W L, Keyshar K, Ye G, Vajtai R, Lou J, Liu Z, Ringe E, Tay B K, Ajayan P M 2014 ACS Nano 8 5125
[48]	van der Zande A M, Huang P Y, Chenet D A, Berkelbach T C, You Y, Lee G H, Heinz T F, Reichman D R, Muller D A, Hone J C 2013 Nat. Mater. 12 554
[49]	Liu K K, Zhang W, Lee Y H, Lin Y C, Chang M T, Su C Y, Chang C S, Li H, Shi Y, Zhang H, Lai C S, Li L J 2012 Nano Lett. 12 1538
[50]	Kang K, Xie S, Huang L, Han Y, Huang P Y, Mak K F, Kim C J, Muller D, Park J 2015 Nature 520 656
[51]	Wang X, Feng H, Wu Y, Jiao L 2013 J. Am. Chem. Soc. 135 5304
[52]	Chen W, Zhao J, Zhang J, Gu L, Yang Z, Li X, Yu H, Zhu X, Yang R, Shi D, Lin X, Guo J, Bai X, Zhang G 2015 J. Am. Chem. Soc. 137 15632
[53]	Chen J, Zhao X, Tan S J, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum T C, Loh K P 2017 J. Am. Chem. Soc. 139 1073
[54]	Li S L, Tsukagoshi K, Orgiu E, Samori P 2016 Chem. Soc. Rev. 45 118
[55]	Schmidt H, Giustiniano F, Eda G 2015 Chem. Soc. Rev. 44 7715
[56]	Butler S Z, Hollen S M, Cao L, Cui Y, Gupta J A, Gutierrez H R, Heinz T F, Hong S S, Huang J, Ismach A F, Johnston-Halperin E, Kuno M, Plashnitsa V V, Robinson R D, Ruoff R S, Salahuddin S, Shan J, Shi L, Spencer M G, Terrones M, Windl W, Goldberger J E 2013 ACS Nano 7 2898
[57]	Xu Y, Cheng C, Du S, Yang J, Yu B, Luo J, Yin W, Li E, Dong S, Ye P, Duan X 2016 ACS Nano 10 4895
[58]	Allain A, Kang J, Banerjee K, Kis A 2015 Nat. Mater. 14 1195
[59]	Pham V P, Yeom G Y 2016 Adv. Mater. 28 9024
[60]	Chhowalla M, Jena D, Zhang H 2016 Nat. Rev. Mater. 1 16052
[61]	Wang Q H, Kalantar-Zadeh K, Kis A, Coleman J N, Strano M S 2012 Nat. Nanotechnol. 7 699
[62]	Yu Z, Ong Z Y, Pan Y, Cui Y, Xin R, Shi Y, Wang B, Wu Y, Chen T, Zhang Y W, Zhang G, Wang X 2016 Adv. Mater. 28 547
[63]	Cui Y, Xin R, Yu Z, Pan Y, Ong Z Y, Wei X, Wang J, Nan H, Ni Z, Wu Y, Chen T, Shi Y, Wang B, Zhang G, Zhang Y W, Wang X 2015 Adv. Mater. 27 5230
[64]	Fleischauer P D, Bauer R 1987 Asle Trans. 30 160
[65]	Salvatore G A, Munzenrieder N, Barraud C, Petti L, Zysset C, Buthe L, Ensslin K, Troster G 2013 ACS Nano 7 8809
[66]	Moore B T, Ferry D K 1980 J. Appl. Phys. 51 2603
[67]	Fischetti M V, Neumayer D A, Cartier E A 2001 J. Appl. Phys. 90 4587
[68]	Veres J, Ogier S D, Leeming S W, Cupertino D C, Khaffaf S M 2003 Adv. Funct. Mater. 13 199
[69]	Hulea I N, Fratini S, Xie H, Mulder C L, Iossad N N, Rastelli G, Ciuchi S, Morpurgo A F 2006 Nat. Mater. 5 982
[70]	Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nanotechnol. 3 206
[71]	DaSilva A M, Zou K, Jain J K, Zhu J 2010 Phys. Rev. Lett. 104 236601
[72]	Ando T, Fowler A B, Stern F 1982 Rev. Mod. Phys. 54 437
[73]	Sarma S D, Adam S, Hwang E, Rossi E 2011 Rev. Mod. Phys. 83 407
[74]	Ong Z Y, Fischetti M V 2013 Phys. Rev. B 88 165316
[75]	Amani M, Chin M L, Birdwell A G, Oregan T P 2013 Appl. Phys. Lett. 102 193107
[76]	Yu Z, Pan Y, Shen Y, Wang Z, Ong Z Y, Xu T, Xin R, Pan L, Wang B, Sun L, Wang J, Zhang G, Zhang Y W, Shi Y, Wang X 2014 Nat. Commun. 5 5290
[77]	Qiu H, Xu T, Wang Z, Ren W, Nan H, Ni Z, Chen Q, Yuan S, Miao F, Song F, Long G, Shi Y, Sun L, Wang J, Wang X 2013 Nat. Commun. 4 2642
[78]	Fuhr J D, Saul A, Sofo J O 2004 Phys. Rev. Lett. 92 026802
[79]	Lu C P, Li G, Mao J, Wang L M, Andrei E Y 2014 Nano Lett. 14 4628
[80]	Zhou W, Zou X, Najmaei S, Liu Z, Shi Y, Kong J, Lou J, Ajayan P M, Yakobson B I, Idrobo J C 2013 Nano Lett. 13 2615
[81]	Moses P G, Hinnemann B, Topse H, Nrskov J K 2007 J. Catal. 248 188
[82]	And J F P, Payen E 2003 J. Phys. Chem. B 107 4057
[83]	Voiry D, Yamaguchi H, Li J, Silva R, Alves D C, Fujita T, Chen M, Asefa T, Shenoy V B, Eda G, Chhowalla M 2013 Nat. Mater. 12 850
[84]	Karunadasa H I, Montalvo E, Sun Y J, Majda M, Long J R, Chang C J 2012 Science 335 698
[85]	Zhu W, Low T, Lee Y H, Wang H, Farmer D B, Kong J, Xia F, Avouris P 2014 Nat. Commun. 5 3087
[86]	Toshihiro K, Ryo Y, Kohei U 2012 Self‐Assembled Monolayer (SAM) (Weinheim: Wiley‐VCH Verlag GmbH Co. KGaA)
[87]	Schreiber F 2000 Structure and Growth of Self-assembling Monolayers (Chicago: University of Chicago Press)
[88]	Ulman A 1996 Chem. Rev. 96 1533
[89]	Wang X, Xu J B, Wang C, Du J, Xie W 2011 Adv. Mater. 23 2464
[90]	Li Y, Xu C Y, Hu P, Zhen L 2013 ACS Nano 7 7795
[91]	Najmaei S, Zou X, Er D, Li J, Jin Z, Gao W, Zhang Q, Park S, Ge L, Lei S, Kono J, Shenoy V B, Yakobson B I, George A, Ajayan P M, Lou J 2014 Nano Lett. 14 1354
[92]	Burson K M, Cullen W G, Adam S, Dean C R, Watanabe K, Taniguchi T, Kim P, Fuhrer M S 2013 Nano Lett. 13 3576
[93]	Dean C R, Young A F, Meric I, Lee C, Wang L, Sorgenfrei S, Watanabe K, Taniguchi T, Kim P, Shepard K L, Hone J 2010 Nat. Nanotechnol. 5 722
[94]	Wang L, Gao Y, Wen B, Han Z, Taniguchi T, Watanabe K, Koshino M, Hone J, Dean C R 2015 Science 350 1231
[95]	Meric I, Dean C R, Petrone N, Wang L, Hone J, Kim P, Shepard K L 2013 Proc. IEEE 101 1609
[96]	Shiue R J, Gao Y, Wang Y, Peng C, Robertson A D, Efetov D K, Assefa S, Koppens F H, Hone J, Englund D 2015 Nano Lett. 15 7288
[97]	Liu Y, Wu H, Cheng H C, Yang S, Zhu E, He Q, Ding M, Li D, Guo J, Weiss N O, Huang Y, Duan X 2015 Nano Lett. 15 3030
[98]	Chen X, Wu Z, Xu S, Wang L, Huang R, Han Y, Ye W, Xiong W, Han T, Long G, Wang Y, He Y, Cai Y, Sheng P, Wang N 2015 Nat. Commun. 6 6088
[99]	Qiu H, Pan L J, Yao Z N, Li J J, Shi Y, Wang X R 2012 Appl. Phys. Lett. 100 123104
[100]	Lembke D, Kis A 2012 ACS Nano 6 10070
[101]	Sangwan V K, Arnold H N, Jariwala D, Marks T J, Lauhon L J, Hersam M C 2013 Nano Lett. 13 4351
[102]	Cui X, Lee G H, Kim Y D, Arefe G, Huang P Y, Lee C H, Chenet D A, Zhang X, Wang L, Ye F, Pizzocchero F, Jessen B S, Watanabe K, Taniguchi T, Muller D A, Low T, Kim P, Hone J 2015 Nat. Nanotechnol. 10 534
[103]	Das S, Chen H Y, Penumatcha A V, Appenzeller J 2013 Nano Lett. 13 100
[104]	Popov I, Seifert G, Tomnek D 2012 Phys. Rev. Lett. 108 156802
[105]	Liu W, Kang J, Cao W, Sarkar D, Khatami Y, Jena D, Banerjee K 2013 Electron Devices Meeting (IEDM), 2013 IEEE International Washington, DC, USA, December 9-11, 2013 p19.4. 1
[106]	Kang J, Sarkar D, Liu W, Jena D, Banerjee K 2012 Electron Devices Meeting (IEDM), 2012 IEEE International San Francisco, USA, December 10-13, 2012 p17.4.1
[107]	Kang J H, Liu W, Sarkar D, Jena D, Banerjee K 2014 Phys. Rev. X 4 031005
[108]	Liu W, Sarkar D, Kang J, Cao W, Banerjee K 2015 ACS Nano 9 7904
[109]	Kang J H, Liu W, Banerjee K 2014 Appl. Phys. Lett. 104 093106
[110]	Yang L, Majumdar K, Liu H, Du Y, Wu H, Hatzistergos M, Hung P Y, Tieckelmann R, Tsai W, Hobbs C, Ye P D 2014 Nano Lett. 14 6275
[111]	Fang H, Chuang S, Chang T C, Takei K, Takahashi T, Javey A 2012 Nano Lett. 12 3788
[112]	Fang H, Tosun M, Seol G, Chang T C, Takei K, Guo J, Javey A 2013 Nano Lett. 13 1991
[113]	Du Y, Liu H, Neal A T, Si M, Peide D Y 2013 IEEE Electron. Dev. Lett. 34 1328
[114]	Zhao P, Kiriya D, Azcatl A, Zhang C, Tosun M, Liu Y S, Hettick M, Kang J S, McDonnell S, Santosh K C, Guo J, Cho K, Wallace R M, Javey A 2014 ACS Nano 8 10808
[115]	Kiriya D, Tosun M, Zhao P, Kang J S, Javey A 2014 J. Am. Chem. Soc. 136 7853
[116]	Rai A, Valsaraj A, Movva H C, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register L F, Tutuc E, Banerjee S K 2015 Nano Lett. 15 4329
[117]	Mcclellan C J, Yalon E, Smithe K K H, Suryavanshi S V, Pop E 2017 Device Research Conference (DRC), 2017 75th Annual South Bend, USA, June 25-28, 2017 p1
[118]	Liu H, Si M, Deng Y, Neal A T, Du Y, Najmaei S, Ajayan P M, Lou J, Ye P D 2014 ACS Nano 8 1031
[119]	Baugher B W, Churchill H O, Yang Y, Jarillo-Herrero P 2013 Nano Lett. 13 4212
[120]	Guo Y, Han Y, Li J, Xiang A, Wei X, Gao S, Chen Q 2014 ACS Nano 8 7771
[121]	Kappera R, Voiry D, Yalcin S E, Branch B, Gupta G, Mohite A D, Chhowalla M 2014 Nat. Mater. 13 1128
[122]	Li S L, Komatsu K, Nakaharai S, Lin Y F, Yamamoto M, Duan X, Tsukagoshi K 2014 ACS Nano 8 12836
[123]	English C D, Shine G, Dorgan V E, Saraswat K C, Pop E 2016 Nano Lett. 16 3824
[124]	Wang J, Yao Q, Huang C W, Zou X, Liao L, Chen S, Fan Z, Zhang K, Wu W, Xiao X, Jiang C, Wu W W 2016 Adv. Mater. 28 8302
[125]	Kappera R, Voiry D, Yalcin S E, Jen W, Acerce M, Torrel S, Branch B, Lei S D, Chen W B, Najmaei S, Lou J, Ajayan P M, Gupta G, Mohite A D, Chhowalla M 2014 APL Mater. 2 092516
[126]	Lee G H, Cui X, Kim Y D, Arefe G, Zhang X, Lee C H, Ye F, Watanabe K, Taniguchi T, Kim P, Hone J 2015 ACS Nano 9 7019
[127]	Leong W S, Luo X, Li Y, Khoo K H, Quek S Y, Thong J T 2015 ACS Nano 9 869
[128]	Stokbro K, Engelund M, Blom A 2012 Phys. Rev. B 85 165442
[129]	Chuang H J, Tan X, Ghimire N J, Perera M M, Chamlagain B, Cheng M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2014 Nano Lett. 14 3594
[130]	Chuang H J, Chamlagain B, Koehler M, Perera M M, Yan J, Mandrus D, Tomanek D, Zhou Z 2016 Nano Lett. 16 1896
[131]	Dankert A, Langouche L, Kamalakar M V, Dash S P 2014 ACS Nano 8 476
[132]	Chen J R, Odenthal P M, Swartz A G, Floyd G C, Wen H, Luo K Y, Kawakami R K 2013 Nano Lett. 13 3106
[133]	Lee S, Tang A, Aloni S, Wong H S 2016 Nano Lett. 16 276
[134]	Cui X, Shih E M, Jauregui L A, Chae S H, Kim Y D, Li B, Seo D, Pistunova K, Yin J, Park J H, Choi H J, Lee Y H, Watanabe K, Taniguchi T, Kim P, Dean C R, Hone J C 2017 Nano Lett. 17 4781
[135]	Yu L, Lee Y H, Ling X, Santos E J, Shin Y C, Lin Y, Dubey M, Kaxiras E, Kong J, Wang H, Palacios T 2014 Nano Lett. 14 3055
[136]	Amani M, Burke R A, Proie R M, Dubey M 2015 Nanotechnology 26 115202
[137]	Yu W J, Li Z, Zhou H, Chen Y, Wang Y, Huang Y, Duan X 2013 Nat. Mater. 12 246
[138]	Pezeshki A, Hosseini Shokouh S H, Jeon P J, Shackery I, Kim J S, Oh I K, Jun S C, Kim H, Im S 2016 ACS Nano 10 1118
[139]	Pu J, Funahashi K, Chen C H, Li M Y, Li L J, Takenobu T 2016 Adv. Mater. 28 4111
[140]	Huang J, Somu S, Busnaina A 2012 Nanotechnology 23 335203
[141]	Sachid A B, Tosun M, Desai S B, Hsu C Y, Lien D H, Madhvapathy S R, Chen Y Z, Hettick M, Kang J S, Zeng Y, He J H, Chang E Y, Chueh Y L, Javey A, Hu C 2016 Adv. Mater. 28 2547
[142]	Liu H, Neal A T, Zhu Z, Luo Z, Xu X, Tomanek D, Ye P D 2014 ACS Nano 8 4033
[143]	Su Y, Kshirsagar C U, Robbins M C, Haratipour N, Koester S J 2016 2d Mater. 3 011006
[144]	Jeon P J, Kim J S, Lim J Y, Cho Y, Pezeshki A, Lee H S, Yu S, Min S W, Im S 2015 ACS Appl. Mater. Inter. 7 22333
[145]	Cho A J, Park K C, Kwon J Y 2015 Nanoscale Res. Lett. 10 115
[146]	Yu C H, Fan M L, Yu K C, Hu V P H, Su P, Chuang C T 2016 IEEE Trans. Electron Dev. 63 625
[147]	Kshirsagar C U, Xu W, Su Y, Robbins M C, Kim C H, Koester S J 2016 ACS Nano 10 8457
[148]	Zhang E, Wang W, Zhang C, Jin Y, Zhu G, Sun Q, Zhang D W, Zhou P, Xiu F 2015 ACS Nano 9 612
[149]	Chen M C, Li K S, Li L J, Lu A Y, Li M Y, Chang Y H, Lin C H, Chen Y J, Hou Y F, Chen C C 2015 Electron Devices Meeting (IEDM), 2015 IEEE International Washington, DC, USA, December 7-9, 2015 p32.2.1
[150]	Xu K, Chen D, Yang F, Wang Z, Yin L, Wang F, Cheng R, Liu K, Xiong J, Liu Q, He J 2017 Nano Lett. 17 1065
[151]	Nourbakhsh A, Zubair A, Sajjad R N, Tavakkoli K G A, Chen W, Fang S, Ling X, Kong J, Dresselhaus M S, Kaxiras E, Berggren K K, Antoniadis D, Palacios T 2016 Nano Lett. 16 7798
[152]	Xie L, Liao M, Wang S, Yu H, Du L, Tang J, Zhao J, Zhang J, Chen P, Lu X, Wang G, Xie G, Yang R, Shi D, Zhang G 2017 Adv. Mater. 2017 1702522

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