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柔性有机场效应晶体管研究进展

董京 柴玉华 赵跃智 石巍巍 郭玉秀 仪明东 解令海 黄维

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柔性有机场效应晶体管研究进展

董京, 柴玉华, 赵跃智, 石巍巍, 郭玉秀, 仪明东, 解令海, 黄维

The progress of flexible organic field-effect transistors

Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei
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  • 柔性有机场效应晶体管具有可折叠、质量轻、低成本等优点,在柔性显示、柔性传感器、柔性射频标签和柔性集成电路等方面显示了广阔的应用前景.本文在介绍柔性有机场效应 晶体管最新研究进展的基础上, 总结了柔性有机场效应晶体管的器件结构和柔性有机场效应晶体管所使用的衬底材料、 栅绝缘层材料、有源层材料及电极材料, 阐述了柔性有机场效应晶体管的制备工艺, 并讨论了不同的弯曲方式对柔性有机场效应晶体管性能的影响, 最后总结和展望了柔性有机场效应晶体管的应用领域.
    Flexible organic field-effect transistors (OFETs) have revealed wide prospect in their applications to the flexible display, flexible sensor, flexible radio frequency tag and flexible integrated circuit due to their advantages such as foldability, light weight of device and low-cost fabrication process. On the basis of the introduction of advancement in the study of flexible OFETs in this paper, a broad overview about device structures of flexible OFETs, substrate materials, gate insulating layer materials, active layer materials and electrode materials used for flexible OFETs is given, the fabricating process of flexible OFETs is explained, and the effect of bending pattern on the performance of flexible OFETs is discussed. Finally, the application areas of flexible OFETs are summarized and prospected.
    • 基金项目: 国家重点基础研究发展计划(批准号:2009CB930600,2012CB933301,2012CB723402)、国家自然科学基金(批准号:61204095,21144004)、中国博士后科学基金(批准号:20070410883)、教育部博士点基金(批准号:20113223120003)、江苏省自然科学基金(批准号:BK2012431,BK2011761,SBK201122680)、黑龙江省博士后基金(批准号:BH-Z07233)、江苏省高校自然科学基础研究面上项目(批准号:11KJB510017)和南京邮电大学人才科研启动基金(批准号:NY211022,NY210030)资助的课题.
    • Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2009CB930600, 2012CB933301, 2012CB723402), the National Natural Science Foundation of China (Grant Nos. 61204095, 21144004), the National Science Foundation for Post-Doctoral Scientists of China (Grant No. 20070410883), the Key Project of Chinese Ministry of Education, China (Grant No. 20113223120003), the Natural Science Foundation of Jiangsu Province, China (Grant Nos. BK2012431, BK2011761, SBK201122680), the Jiangsu Planned Projects for Postdoctoral Research, China (Grant No. BH-Z07233), the Natural Science Foundation of the Education Committee of Jiangsu Province, China (Grant No. 11KJB510017), and the Scientific Research Starting Foundation of Nanjing University of Posts and Telecommunications, China (Grant Nos. NY211022, NY210002, NY210030).
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  • [1]

    Zhang F, Funahashi M, Tamaoki N 2010 Org. Electron. 11 363

    [2]

    Kawasaki N, Kalb W L, Mathis T, Kaji Y, Mitsuhashi R, Okamoto H, Sugawara Y, Fujiwara A, Kubozono Y, Batlogg B 2010 Appl. Phys. Lett. 96 113305

    [3]

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    [4]

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    [5]

    Gburek B, Wagner V 2010 Org. Electron. 11 814

    [6]

    Uno M, Nakayama K, Soeda J, Hirose Y, Miwa K, Uemura T, Nakao A, Takimiya K, Takeya J 2011 Adv. Mater. 23 3047

    [7]

    Lim H, Bae C M, Kim Y K, Park C H, Cho W J, Ha C S 2003 Synthetic. Met. 135 49

    [8]

    Lim H, Cho W J, Ha C S, Ando S, Kim Y K, Park C H, Lee K 2002 Adv. Mater. 14 1275

    [9]

    Roberts M E, Mannsfeld S C B, Stoltenberg R M, Bao Z 2009 Org. Electron. 10 377

    [10]

    Tan H S, Mathews N, Cahyadi T, Zhu F R, Mhaisalkar S G 2009 Appl. Phys. Lett. 94 263303

    [11]

    Dimitrakopoulos C D, Purushothaman S, Kymissis J, Callegari A, Shaw J M 1999 Science 283 822

    [12]

    Chang M F, Lee P T, McAlister S P, Chin A 2009 IEEE Electron Dev. Lett. 30 133

    [13]

    Tan H S, Cahyadi T, Wang Z B, Lohani A, Tsakadze Z, Zhang S, Zhu F R, Mhaisalkar S G 2008 IEEE Electron Dev. Lett. 29 698

    [14]

    Briseno A L, Tseng R J, Ling M M, Falcao E H L, Yang Y, Wudl F, Bao Z 2006 Adv. Mater. 18 2320

    [15]

    Sung C F, Kekuda D, Chu L F, Lee Y Z, Chen F C, Wu M C, Chu C W 2009 Adv. Mater. 21 4845

    [16]

    Chang J W, Wang C G, Huang C Y, Tsai T D, Guo T F, Wen T C 2011 Adv. Mater. 23 4077

    [17]

    Kim B J, Jang H, Lee S K, Hong B H, Ahn J H, Cho J H 2010 Nano Lett. 10 3464

    [18]

    Wang C H, Hsieh C Y, Hwang J C 2011 Adv. Mater. 23 1630

    [19]

    Hwang D K, Fuentes-Hernandez C, Kim J B, Potscavage Jr W J, Kippelen B 2011 Org. Electron. 12 1108

    [20]

    Zirkl M, Haase A, Fian A, Schon H, Sommer C, Jakopic G, Leising G, Stadlober B, Graz I, Gaar N, Schwodiauer R, Bauer-Gogonea S, Bauer S 2007 Adv. Mater. 19 2241

    [21]

    Sidler K, Cvetkovic N V, Savu V, Tsamados D, Ionescu A M, Brugger J 2010 Sensor. Actua. {A-Phys.} 162 155

    [22]

    Lee W H, Park J, Sim S H, Jo S B, Kim K S, Hong B H, Cho K 2011 Adv. Mater. 23 1752

    [23]

    Liu P, Wu Y L, Li Y N, Ong B S, Zhu S P 2006 J. Am. Chem. Soc. 128 4554

    [24]

    Graz I M, Lacour S P 2009 Appl. Phys. Lett. 95 243305

    [25]

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    [26]

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    [27]

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    [28]

    Liu Y R, Wang Z X, Yu J L, Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣, 王智欣, 虞佳乐, 徐海红2009 58 8566]

    [29]

    Sekitani T, Zschieschang U, Klauk H, Someya T 2010 Nat. Mater. 9 1015

    [30]

    Zschieschang U, Ante F, Yamamoto T, Takimiya K, Kuwabara H, Ikeda M, Sekitani T, Someya T, Kern K, Klauk H 2010 Adv. Mater. 22 982

    [31]

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    [40]

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出版历程
  • 收稿日期:  2012-07-02
  • 修回日期:  2012-09-15
  • 刊出日期:  2013-02-05

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