Enhanced performance of organic light-emitting diodes by using PTB7 as anode modification layer

Huang Di; Xu Zheng; Zhao Su-Ling

doi:10.7498/aps.63.027301

Abstract

Poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b’]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3, 4-b]thiophenediyl]] (PTB7) is used as an anode modification layer to fabricate organic light-emitting diode (OLED) with the configuration of ITO/PTB7 (with different concentrations)/NPB(40 nm)/Alq3(60 nm)/LiF(1 nm)/Al, and the effect of PTB7 concentration on the performance of device is investigated. The best concentration of PTB7 is 0.25 mg/mL, while the best device turn-on voltage is 4.3 V. For the best device, its maximum luminance is 45800 cd/m2 at a driving voltage of 14.6 V, its maximum current efficiency is 9.1 cd/A, its turn-on voltage is reduced by 1.9 V and the maximum luminance is increased by 78.5% compared with that of the device without PTB7. The improvement of its performance is ascribed to the fact that the hole injection and transport ability are improved by the layer of PTB7.

Keywords:

Authors and contacts

1.
Key Laboratory of Luminescence and Optical Information of Ministry of Education, Beijing Jiaotong University, Beijing 100044, China;
2.
Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China
Funds: Project supported by the National Basic Research Program of China (Grant No. 2010CB327704), the National Natural Science Foundation of China (Grant No. 51272022), the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-10-0220) and the Fundamental Research Funds for the Central Universities of Ministry of Education of China (Grant No. 2012JBZ001).

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Cited By

[1]	Liu B Q, Lan L F, Zou J H, Peng J B 2013 Acta Phys. Sin. 62 087302 (in Chinese) [刘佰全, 兰林锋, 邹建华, 彭俊彪 2013 62 087302]
[2]	Luo J X, Xiao L X, Chen Z J, Gong Q H 2008 Appl. Phys. Lett. 93 133301
[3]	Hung L S, Tang C W, Mason M G 1997 Appl. Phys. Lett. 70 152
[4]	Li F, Tang H, Anderegg J, Shinar J 1997 Appl. Phys. Lett. 70 1233
[5]	Kim Y E, Park H, Kim J J 1996 Appl. Phys. Lett. 69 599
[6]	Li J, Liu J C, Gao C J 2011 Acta Phys. Sin. 60 117106 (in Chinese) [李蛟, 刘俊成, 高从堦 2011 60 117106]
[7]	Liang Y, Xu Z, Xia J, Tsai S T, Wu Y, Li G, Ray C, Yu L 2010 Adv. Mater. 22 E135
[8]	Liu B Q, Tao H, Su Y J, Gao D Y, Lan L F, Zou J H, Peng J B 2013 Chin. Phys. B 22 077303
[9]	Romero D, Schaer M, Zuppiroli L, Cesar B, Francois B 1995 Appl. Phys. Lett. 67 1659
[10]	Roigé A, Campoy Q M, Ossó J, Alonso M, Vega L, Garriga M 2012 Synth. Met. 161 2570
[11]	Kim S H, Jang J, Lee J Y 2006 Appl. Phys. Lett. 89 253501
[12]	Feng X, Huang C, Liu V, Khangura R, Lu Z 2005 Appl. Phys. Lett. 86 143511
[13]	Lee J Y, Kwon J H 2006 Appl. Phys. Lett. 88 183502
[14]	Lee J Y 2006 Appl. Phys. Lett. 88 07351
[15]	Valadares M, Silvestre I, Calado H D R, Neves B R A, Guimarães P S S, Cury L A 2009 Mater. Sci. Eng. C 29 57
[16]	Li G L, He L J, Li J, Li X S, Liang S, Gao M M, Yuan H W 2013 Acta Phys. Sin. 62 197202 (in Chinese) [李国龙, 何力军, 李进, 李学生, 梁森, 高忙忙, 袁海雯 2013 62 197202]
[17]	Liu D A, Fina M, Chen Z Y, Chen X B, Liu G, Johnson S, Mao S S 2007 Appl. Phys. Lett. 91 093514
[18]	Day S R, Hatton R A, Chesters M A, Willis M R 2002 Thin Solid Films 410 159
[19]	Zhang F J, Vollmer A, Zhang J, Xu Z, Rabe J P, Koch N 2007 Org. Electron. 8 606
[20]	Song D D 2011 Ph. D. Dissertation (Beijing: Beijing Jiaotong University) (in Chinese) [宋丹丹 2011 博士学位论文(北京: 北京交通大学)]

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Vol. 63, Issue 2 - 2014-01-20

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