Optimization of the parameters for growth high-qulity GaN film by hydride vapor phase epitaxy

Zhang Li-Li; Liu Zhan-Hui; Xiu Xiang-Qian; Zhang Rong; Xie Zi-Li

doi:10.7498/aps.62.208101

Abstract

In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized. The influences of the low-temperature (LT) nucleation layer growth time, V/Ⅲ precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, V/Ⅲ precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from three-dimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 μat the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D0X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Keywords:

Authors and contacts

1.
Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China;
2.
School of Physics and Optoelectronic Engineering, Nanjing University of Information Science and Technology, Nanjing 210044, China
Funds: Project supported by the National Basic Research Program of China (Grant Nos. 2011CB301900, 2012CB619304), the National Natural Science Foundation of China (Grant Nos. 60990311, 60906025, 61176063), the Young Scientists Fund of the National Natural Science Foundation of China (Grant Nos. 51002079, 21203098), and the National High Technology Research and Development Program of China (Grant No. 2011AA03A103).

References

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[32]	Ruterana P, Albrecht M, Neugebauer J 2003 Nitride Semiconductors: Handbook on Materials and Devices (New York: Wiley-VCH) p49
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[34]	Ito T, Sumiya M, Takano Y, Ohtsuka K, Fuke S 1999 Jpn. J. Appl. Phys. 38 649
[35]	Kim S Y, Lee H J, Park S H, Lee W, Jung M N, Fujii K, Goto T, Sekiguchi T, Chang J, Kil G, Yao T 2010 J. Cryst. Growth 312 2150
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[41]	Darakchieva V, Monemar B, Usui A 2007 Appl. Phys. Lett. 91 031911
[42]	Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[43]	Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager III J W, Jones E, Liliental-Weber Z, Rubin M, Weber E R, Bremser M D, Davis R F 1996 Phys. Rev. B 54 17745
[44]	Monemar B 2001 J. Phys.: Condens. Matter. 13 7011
[45]	Oh E, Lee S K, Park S S, Lee K Y, Song I J, Han J Y 2001 Appl. Phys. Lett. 78 273
[46]	Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899

Cited By

[1]	Nakamura S, Senoh M, Iwasa N, Nagahama S, Yamada T, Mukai T 1995 Jpn. J. Appl. Phys. 34 L1332
[2]	Zhang J P, Chitnis A, Adivarahan V, Wu S, Mandavilli V, Pachipulusu R, Shatalov M, Simin G, Yang J W, Khan M A 2002 Appl. Phys. Lett. 81 4910
[3]	Andre Y, Trassoudaine A, Tourret J, Cadoret R, Gil E, Castelluci D, Aoude O, Disseix P 2007 J. Cryst. Growth 306 86
[4]	Lee D Y, Han S H, Lee D J, Lee J W, Kim D J, Kim Y S, Kim S T, Leem J Y 2013 Appl. Phys. Lett. 102 011115
[5]	Mei J, Liu R, Ponce F A, Omiya H, Mukai T 2007 Appl. Phys. Lett. 90 171922
[6]	Maruska H P, Tietjen J J 1969 Appl. Phys. Lett. 15 327
[7]	Hageman P R, Kirilyuk V, Corbeek W H M, Weyher J L, Lucznik B, Bockowski M, Porowski S, Mller S 2003 J. Cryst. Growth 255 241
[8]	Ishibashi A, Kidoguchi I, Sugahara G, Ban Y 2000 J. Cryst. Growth 221 338
[9]	Tourret J, Gourmala O, André Y, Trassoudaine A, Gil E, Castelluci D, Cadoret R 2009 J. Cryst. Growth 311 1460
[10]	Nam O H, Bremser M D, Zheleva T S, Davis R F 1997 Appl. Phys. Lett. 71 2638
[11]	Zheleva T S, Nam O H, Bremser M D, Davis R F 1997 Appl. Phys. Lett. 71 2472
[12]	Akasaki I, Amano H, Koide Y, Hiramatsu K, Sawaki N 1989 J. Cryst. Growth 98 209
[13]	Sumiya M, Ogusu N, Yotsuda Y, Itoh M, Fuke S, Nakamura T, Mochizuki S, Sano T, Kamiyama S, Amano H, Akasaki I 2003 J. Appl. Phys. 93 1311
[14]	Xue J S, Hao Y, Zhang J C, Ni J Y 2010 Chin. Phys. B 19 057203
[15]	Lin Z Y, Zhang J C, Zhou H, Li X G, Meng F N, Zhang L X, Ai S, Xu S R, Zhao Y, Hao Y 2012 Chin. Phys. B 21 126804
[16]	Ni Y Q, He Z Y, Zhong J, Yao Y, Yang F, Xiang P, Zhang B J, Liu Y 2013 Chin. Phys. B 22 088104
[17]	Peng D S, Chen Z G, Tan C C 2012 Chin. Phys. B 21 128101
[18]	Zhao W, Wang L, Wang J X, Luo Y 2011 Chin. Phys. B 20 076101
[19]	Qiu K, Zhong F, Li X H, Yin Z J, Ji C J, Han Q F, Chen J R, Cao X C, Wang Y Q 2007 Chin. Phys. 16 2082
[20]	Zhou A, Xiu X Q, Zhang R, Xie Z L, Hua X M, Liu B, Han P, Gu S L, Shi Y, Zheng Y D 2013 Chin. Phys. B 22 017801
[21]	Du Y H, Wu J J, Luo W K, John G, Han T, Tao Y B, Yang Z J, Yu T J, Zhang G Y 2011 Chin. Phys. B 20 098101
[22]	Wang L, Wang J X, Zhao W, Zou X, Luo Y 2010 Chin. Phys. B 19 076803
[23]	Chen Z, Yang W, Liu L, Wan C H, Li L, He Y F, Liu N Y, Wang L, Li D, Chen W H, Hu X D 2012 Chin. Phys. B 21 108505
[24]	Jiang R, Lu H, Chen D J, Ren F F, Yan D W, Zhang R, Zheng Y D 2013 Chin. Phys. B 22 047805
[25]	Chen X L, Kong F M, Li K, Gao H, Yue Q Y 2013 Acta Phys. Sin. 62 017805 (in Chinese) [陈新莲, 孔凡敏, 李康, 高晖, 岳庆炀 2013 62 017805]
[26]	Le L C, Zhao D G, Wu L L, Deng Y, Jiang D S, Zhu Jian J, Liu Z S, Wang H, Zhang S M, Zhang B S, Yang H 2011 Chin. Phys. B 20 127306
[27]	Martin D, Napierala J, Ilegems M, Butté R, Grandjean N 2006 Appl. Phys. Lett. 88 241914
[28]	Hersee S D, Ramer J, Zheng K, Kranenberg C, Malloy K, Banas M, Goorsky M 1995 J. Electron. Mater. 24 1519
[29]	Wickenden A E, Wickenden D K, Kistenmacher T J 1994 J. Appl. Phys. 75 5367
[30]	Meng F Y, Han I, McFelea H, Lindow E, Bertram R, Werkhoven C, Arena C, Mahajan S 2011 J. Cryst. Growth 327 13
[31]	Heying B, Wu X H, Keller S, Li Y, Kapolnek D, Keller B P, Denbaars S P, Speck J S 1996 Appl. Phys. Lett. 68 643
[32]	Ruterana P, Albrecht M, Neugebauer J 2003 Nitride Semiconductors: Handbook on Materials and Devices (New York: Wiley-VCH) p49
[33]	Lucznik B, Pastuszka B, Grzegory I, Boćkowski M, Kamler G, Staszewska E L, Porowski S 2005 J. Cryst. Growth 281 38
[34]	Ito T, Sumiya M, Takano Y, Ohtsuka K, Fuke S 1999 Jpn. J. Appl. Phys. 38 649
[35]	Kim S Y, Lee H J, Park S H, Lee W, Jung M N, Fujii K, Goto T, Sekiguchi T, Chang J, Kil G, Yao T 2010 J. Cryst. Growth 312 2150
[36]	Freitas Jr J A 2010 J. Phys. D: Appl. Phys. 43 073001
[37]	Ueda T, Yuri M, Harris Jr J S 2011 Jpn. J. Appl. Phys. 50 085501
[38]	Solomon G S, Miller D J, Ramsteiner M, Trampert A, Brandt O, Ploog K H 2005 Appl. Phys. Lett. 87 181912
[39]	Paskova T, Valcheva E, Birch J, Tungasmita S, PPersson P O Å, Beccard R, Heuken M, Monemar M 2000 J. Appl. Phys. 88 5729
[40]	Wood D A, Parbrook P J, Lynch R J, Lada M, Cullis A G 2001 Phys. Stat. Sol. A 188 641
[41]	Darakchieva V, Monemar B, Usui A 2007 Appl. Phys. Lett. 91 031911
[42]	Jain S C, Willander M, Narayan J, Overstraeten R V 2000 J. Appl. Phys. 87 965
[43]	Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager III J W, Jones E, Liliental-Weber Z, Rubin M, Weber E R, Bremser M D, Davis R F 1996 Phys. Rev. B 54 17745
[44]	Monemar B 2001 J. Phys.: Condens. Matter. 13 7011
[45]	Oh E, Lee S K, Park S S, Lee K Y, Song I J, Han J Y 2001 Appl. Phys. Lett. 78 273
[46]	Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899

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Vol. 62, Issue 20 - 2013-10-20

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