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2021, 70(19): 197801.
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2020, 69(19): 192401.
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Huang Bin-Bin, Xiong Chuan-Bing, Tang Ying-Wen, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi. Changes of stress and luminescence properties in GaN-based LED films before and after transferring the films to a flexible layer on a submount from the silicon epitaxial substrate. Acta Physica Sinica,
2015, 64(17): 177804.
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Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
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Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong. Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica,
2013, 62(13): 138101.
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Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao. Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica,
2013, 62(2): 026801.
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2011, 60(9): 098107.
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2010, 59(1): 504-507.
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2007, 56(11): 6717-6721.
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Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua. Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica,
2007, 56(3): 1563-1567.
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica,
2006, 55(10): 5216-5220.
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Li Yong-Hua, Xu Peng-Shou, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun. First-principle study on GaN(1010) surface structure. Acta Physica Sinica,
2005, 54(1): 317-322.
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Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua. A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica,
2004, 53(2): 646-650.
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Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi. Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica,
2004, 53(6): 1868-1872.
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Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun. A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica,
2003, 52(10): 2632-2637.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
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