p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates

Mao Qing-Hua; Jiang Feng-Yi; Cheng Hai-Ying; Zheng Chang-Da

doi:10.7498/aps.59.8078

Abstract

We grow green light emitting diodes (LEDs) on Si(111) substrates with p-AlGaN electron blocking layers (EBLs) which have different Al frations. The results show that the variation of quantum efficiency with current density displays a diversity. At lower current densities,the quantum efficiency of LED increases with Al fraction decreasing, at higher current densities, however, the quantum efficiency of LED increases with Al fraction decreasing, which is attributed to the complicated mechnism when electron and hole are recombined in the quantum well.

Keywords:

Authors and contacts

1.
Education Ministry Engineering Reserch Center for Luminescence Matirials and Devices,Nanchang University,Nanchang 330047,China

References

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[14]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J, Park Y 2007Appl. Phy. Lett. 91 183507
[15]	Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K 2003 J. Appl. Phys. 93 10114

Cited By

[1]	Pimputkar S, Speck J S, Denbaars S P, Nakamura S 2009 Nat. Photonics 3 179
[2]	Domen K, Soeijima R, Kuramata A, Tanahashi T 1998 MRS Internet J. Nitride Semicond. Res. 3 1
[3]	Ambacher O 1998 J. Phys. D:Appl. Phys. 31 2653
[4]	Liu F, Wang T, Shen B, Huang S, Lin F, Ma N, Xu F J, Wang P, Yao J Q 2008 Chin. Phys. B 18 1614
[5]	Feng Q, Tian Y, Bi Z W, Yue Y Z, Ni J Y, Zhang J C, Hao Y, Yang L A 2009 Chin. Phys. B 18 3014
[6]	Schubert E F 2003 Light-Emitting Diodes (Cambridge:Cambridge University Press) p75
[7]	Jang C H, Sheu J K, Tsai C M, Shei S C, Lai W C, Chang S J 2008 IEEE Photonic Techl. 20 1142
[8]	Grzanka S, Franssen G, Targowski G, Krowicki K, Suski T, Czerhecki R, Perlin P, Leszczynski M 2007 Appl. Phys. Lett. 90 10357
[9]	Han S, Lee D, Lee S, Cho C, Kwon M, Lee S, Noh D, Kim D, Kim Y, Park S 2009 Appl. Phys. Lett. 94 231123
[10]	Mo C L, Fang W Q, Pu Y, Liu H C, Jiang F Y 2005 J. Cryst. Growth 285 312
[11]	Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C L 2008 Acta Phys. Sin. 57 3176 (in Chinese) [熊传兵、江风益、方文卿、王立、莫春兰 2008 57 3176]
[12]	Xiong C B, Jiang F Y, Wang L, Fang W Q, Mo C L 2008 Acta Phys. Sin. 57 7861 (in Chinese) [熊传兵、江风益、王立、方文卿、莫春兰 2008 57 7861]
[13]	Suzuki M, Nishio J, Ohomura M, Hongo C 1998 J. Cryst. Growth 189 511
[14]	Kim M H, Schubert M F, Dai Q, Kim J K, Schubert E F, Piprek J, Park Y 2007Appl. Phy. Lett. 91 183507
[15]	Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K 2003 J. Appl. Phys. 93 10114

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Vol. 59, Issue 11 - 2010-06-05

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