p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates

Mao Qing-Hua; Jiang Feng-Yi; Cheng Hai-Ying; Zheng Chang-Da

doi:10.7498/aps.59.8078

Search

x

Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substratesJ. Acta Physica Sinica, 2010, 59(11): 8078-8082. DOI: 10.7498/aps.59.8078

Citation:

Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substratesJ. Acta Physica Sinica, 2010, 59(11): 8078-8082. DOI: 10.7498/aps.59.8078

Citation:

Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da. p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substratesJ. Acta Physica Sinica, 2010, 59(11): 8078-8082. DOI: 10.7498/aps.59.8078