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The δ-doped GaAs/AlxGa1-xAs 2DEG samples are grown with molecular beam epitaxy. In this process, the doping concentration (Nd), spatial isolation layer thickness (Wd) and Al component of AlxGa1-xAs (xAl) are changed separately. Then Hall measurements on the samples are made in the two temperature conditions (300 and 78 K). According to the test results, the relationships of Nd, Wd and xAl to the carrier density and mobility of GaAs/AlxGa1-xAs 2DEG are discussed respectively. The δ-doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dot samples are grown, and InAs quantum dots with different densities are grown with gradient growth method. The Hall measurement results show that the mobility of GaAs/AlxGa1-xAs 2DEG greatly decreases with density of InAs quantum dots steadily increasing. In experiments, the lowest density of 16×108/cm2 InAs quantum dot sample is obtained. The experimental results can provide a reference for the study and application of δ-doped GaAs/AlxGa1-xAs 2DEG with embedded InAs quantum dots.
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Keywords:
- two-dimensional electron gas /
- InAs quantum dots /
- carrier concentration /
- mobility
[1] Spirkoska D, Fontcuberta i Morral A, Dufouleur J, Xie Q S, Abstreiter G 2011 Phys. Status Solidi RRL 9 353
[2] Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒强, 舒永春, 张冠杰, 刘如彬, 姚江宏, 皮彪, 邢晓东, 林耀望, 许京军, 王占国 2006 55 1379]
[3] Nádvorník L, Orlita M, Goncharuk N A, Smrča L, Novák V, Jurka V, Hruška K, Výborný Z, Wasilewski Z R, Potemski M, Výborný K 2012 New J. Phys. 14 053002
[4] Dingle R, Störmer H L, Gossard A C, Wiegmann W 1978 Appl. Phys. Lett. 33 665
[5] Mimura T, Hiyamizu S, Fujii T, Nanbu K 1980 Jap. J. Appl. Phys. 19 225
[6] Gao H L, Li D L, Zhou W Z, Shang L Y, Wang B Q, Zhu Z P, Zeng Y P 2007 Acta Phys. Sin. 56 4955 (in Chinese) [高宏玲, 李东临, 周文政, 商丽燕, 王宝强, 朱战平, 曾一平 2007 56 4955]
[7] Shimomura S, Shinohara K, Kasahara K, Hiyamizu S 1998 Microelectron. Engin. 43 213
[8] Rekaya S, Bouzaïene L, Sfaxi L, Hjiri M, Contreras S, Robert J L, Maaref H 2005 Phys. Stat. Sol. A 202 602
[9] Rössler C, Feil T, Mensch P, Ihn T, Ensslin K, Schuh D, Wegscheider W 2010 New J. Phys. 12 043007
[10] Kardyna B E, Hees S S, Shields A J 2007 Appl. Phys. Lett. 90 181114
[11] Gansen1 E J, Rowe1 M A, Greene M B, Rosenberg D, EHarvey T 2007 Nature Photonics 1 585
[12] Ma J, Luo H L, Wen S C 2011 Acta Phys. Sin. 60 094205 (in Chinese) [马娟, 罗海陆, 文双春 2011 60 094205]
[13] van De Pauw L J 1968 Philips Tech. Rev. 20 220
[14] Stern F 1972 Phys. Rev. B 5 4891
[15] Rekaya1 S, Bouzaïene1 L, Sfaxi L, Hjiri M, Contreras S, Robert J L, Maaref H 2005 Phys. Stat. Sol. A 202 602
[16] Ando T 1982 J. Phys. Soc. Jpn. 51 3900
[17] Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827
[18] Huang S S, Niu Z C, Ni H Q, Xiong Y H, Zhan F, Fang Z D, Xia J B 2007 J. Crystal Growth 751 301
[19] Li M F, Yu Y, He J F, Wang L J, Zhu Y, Shang X J, Ni H Q, Niu Z C 2013 Nanoscale Res. Lett. 8 86
[20] Li G D, Yin H, Zhu Q S, Sakaki H, Jiang C 2010 J. Appl. Phys. 108 043702
[21] Sibariy H, Raymondy A, Kubisa M 1996 Semicond. Sci. Technol. 11 1002
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[1] Spirkoska D, Fontcuberta i Morral A, Dufouleur J, Xie Q S, Abstreiter G 2011 Phys. Status Solidi RRL 9 353
[2] Shu Q, Shu Y C, Zhang G J, Liu R B, Yao J H, Pi B, Xing X D, Lin Y W, Xu J J, Wang Z G 2006 Acta Phys. Sin. 55 1379 (in Chinese) [舒强, 舒永春, 张冠杰, 刘如彬, 姚江宏, 皮彪, 邢晓东, 林耀望, 许京军, 王占国 2006 55 1379]
[3] Nádvorník L, Orlita M, Goncharuk N A, Smrča L, Novák V, Jurka V, Hruška K, Výborný Z, Wasilewski Z R, Potemski M, Výborný K 2012 New J. Phys. 14 053002
[4] Dingle R, Störmer H L, Gossard A C, Wiegmann W 1978 Appl. Phys. Lett. 33 665
[5] Mimura T, Hiyamizu S, Fujii T, Nanbu K 1980 Jap. J. Appl. Phys. 19 225
[6] Gao H L, Li D L, Zhou W Z, Shang L Y, Wang B Q, Zhu Z P, Zeng Y P 2007 Acta Phys. Sin. 56 4955 (in Chinese) [高宏玲, 李东临, 周文政, 商丽燕, 王宝强, 朱战平, 曾一平 2007 56 4955]
[7] Shimomura S, Shinohara K, Kasahara K, Hiyamizu S 1998 Microelectron. Engin. 43 213
[8] Rekaya S, Bouzaïene L, Sfaxi L, Hjiri M, Contreras S, Robert J L, Maaref H 2005 Phys. Stat. Sol. A 202 602
[9] Rössler C, Feil T, Mensch P, Ihn T, Ensslin K, Schuh D, Wegscheider W 2010 New J. Phys. 12 043007
[10] Kardyna B E, Hees S S, Shields A J 2007 Appl. Phys. Lett. 90 181114
[11] Gansen1 E J, Rowe1 M A, Greene M B, Rosenberg D, EHarvey T 2007 Nature Photonics 1 585
[12] Ma J, Luo H L, Wen S C 2011 Acta Phys. Sin. 60 094205 (in Chinese) [马娟, 罗海陆, 文双春 2011 60 094205]
[13] van De Pauw L J 1968 Philips Tech. Rev. 20 220
[14] Stern F 1972 Phys. Rev. B 5 4891
[15] Rekaya1 S, Bouzaïene1 L, Sfaxi L, Hjiri M, Contreras S, Robert J L, Maaref H 2005 Phys. Stat. Sol. A 202 602
[16] Ando T 1982 J. Phys. Soc. Jpn. 51 3900
[17] Yu T H, Brennan K F 2001 J. Appl. Phys. 89 3827
[18] Huang S S, Niu Z C, Ni H Q, Xiong Y H, Zhan F, Fang Z D, Xia J B 2007 J. Crystal Growth 751 301
[19] Li M F, Yu Y, He J F, Wang L J, Zhu Y, Shang X J, Ni H Q, Niu Z C 2013 Nanoscale Res. Lett. 8 86
[20] Li G D, Yin H, Zhu Q S, Sakaki H, Jiang C 2010 J. Appl. Phys. 108 043702
[21] Sibariy H, Raymondy A, Kubisa M 1996 Semicond. Sci. Technol. 11 1002
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