Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2  dielectrics

Zhu De-Ming; Men Chuan-Ling; Cao Min; Wu Guo-Dong

doi:10.7498/aps.62.117305

Abstract

A new kind of indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectrics in an in-plane-gate structure is fabricated at room temperature. Indium-tin-oxide (ITO) channel and ITO electrodes (gate, source, and drain) can be deposited simultaneously without precise photolithography and alignment process by using only one nickel shadow mask. So the thin film transistors (TFTs) have a lot of advantages, such as the simple device process、low cost etc. Such TFTs exhibit a good performance at an ultralow operation voltage of 1 V, a high field-effect mobility of 18.35 cm2/Vs , a small subthreshold swing of 82 mV/decade, and a large on-off ratio of 1.1×106, because of the huge electric-double-layer (EDL) capacitance (8 μF/cm2) between the interface of P-doped SiO2 dielectrics and ITO channel. So the TFTs are very promising for the application of low-power and portable electronic products and sensors in the future.

Keywords:

Authors and contacts

1.
School of energy and power engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;
2.
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
Funds: Project supported by the Natural Science Foundation of Zhejiang Pvovince, China (Grant No. 0804201051).

References

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Cited By

[1]	Draghici M, Diaconescu D, Melnikov A, Wieck A D 2010 Phys. Status Solidi A 207 229
[2]	Chung T H, Chen S H, Liao W H, Lin S Y 2010 IEEE Electron Device Lett. 31 1227
[3]	Colinge J P, Lee C W, Afzalian A, Akhavan N D, Yan R, Ferain I, Razavi P, O'Neill B, Blake A, White M, Kelleher A M, McCarthy B, Murphy R 2010 Nat. Nanotechnol. 5 225
[4]	Zhao K S, Xuan R J, Han X, Zhang G M 2012 Acta Phys. Sin. 61 197201 (in Chinese) [赵孔胜, 轩瑞杰, 韩笑, 张耕铭 2012 61 197201]
[5]	Jiang J, Sun J, Dou W, Zhou B, Wan Q 2011 Appl. Phys. Lett. 98 113507
[6]	Raval H N, Tiwari S P, Navan R R, Mhaisalkar, Rao V R 2009 IEEE Electron Device Lett. 30 484
[7]	Kim J B, Fuentes H C, Kippelen B 2008 Appl. Phys. Lett. 93 242111
[8]	Wang G M, Moses D, Heeger A J 2004 J. Appl. Phys. 95 316
[9]	Larsson O, Said E, Berggren M, Crispin X 2009 Adv. Funct. Mater. 19 3334
[10]	Cho J H, Lee J, He Y, Kim B, Lodge P T, Frisbie C D 2008 Adv. Mater. 20 686
[11]	Liu Y R, Chen W, Liao R 2010 Acta Phys. Sin. 59 8088 (in Chinese) [刘玉荣, 陈伟, 廖荣 2010 59 8088]
[12]	Sun J, Liu H X, Jiang J, Lu A X, Wan Q 2010 J. Mater. Chem. 20 8010
[13]	Lu A X, Sun J, Jiang J, Wan Q 2009 Appl. Phys. Lett. 95 222905
[14]	Jiang J, Sun J, Zhou B, Lu A X, Wan Q 2010 IEEE Electron Device Lett. 31 1263
[15]	Jiang J, Dai M Z, Sun J, Zhou B, Lu A X, Wan Q 2011 Appl. Phys. Lett. 109 054501
[16]	Jiang J, Sun J, Lu A X, Wan Q 2011 IEEE Electron Device Lett. 58 547
[17]	Wee G, Larsson O, Srinviasan M, Bcrggren M, Crispin X, Mhaisalkar S 2010 Adv. Funct. Mater. 20 4344

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Vol. 62, Issue 11 - 2013-06-05

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