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基于一步掩模法工艺制备了一种新型的纸上双电荷层超低压薄膜晶体管. 在室温射频磁控溅射过程中, 仅仅利用一块镍掩模板, 就可同时沉积出氧化铟锡(ITO)源漏电极和ITO沟道. 在此基础上, 以等离子体增强化学气相沉积法(PECVD)合成的具有双电荷层效应的微孔SiO2为栅介质, 成功制备出以纸为衬底的超低压氧化物薄膜晶体管. 这种晶体管显示出极好的性能: 超低的工作电压1.5 V, 场效应迁移率为20.1 cm2/Vs, 亚阈值斜率为188 mV/decade, 开关电流比为5× 105. 这种基于全室温一步掩模法工艺制备的纸上氧化物薄膜晶体管具有工作电压低, 工艺简单, 成本低廉等优点, 非常有望应用于未来便携式低功耗电子产品的制造中.A new kind of electric-double-layer indium-tin-oxide (ITO) thin-film transistor (TFT) is fabricated on a paper substrate by one-shadow-mask process. The channel layer can be simultaneously self-assembled between ITO source/drain electrodes by only one shadow mask during RF magnetron sputtering deposition at room temperature. Base on this, we choose microporous SiO2 with electric double layer effect as a gate dielectric, and successfully develop the ultralow-voltage oxide TFT on a paper substrate. The TFT exhibits a good performance with an ultralow operation voltage of 1.5 V, a field-effect mobility of 20.1 cm2/Vs , a subthreshold swing of 188mV/decade, and a large on-off ratio of 5× 105. The full-room-temperature oxide TFT on the paper substrate by one-shadow-mask process shows a lot of advantages, such as low operation voltage, simple device process, low cost, etc. Such a TFT is very promising for the application of low-power and portable electronic products in the future.
[1] RyuMK, Yang S, Park S, Hwang C S, Jeong J K 2009 Appl. Phys. Lett. 95 072104
[2] Xu T N, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J 2010 Acta Phys. Sin. 59 5018(in Chinese) [徐天宁, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 59 5018]
[3] Lim W, Douglas E A, Kim S H, Norton D P, Pearton S J, Ren F, Shen H, Chang W H 2008 Appl. Phys. Lett. 93 252103
[4] Jeong J K, Jeong J H, Yang HW, Park J S, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 91 113505
[5] Kim I D, Choi Y W, Tuller H L 2005 Appl. Phys. Lett. 87 043509
[6] Su N C, Wang J S, Chin A 2009 IEEE Electron Device Lett. 30 1317
[7] Kim J B, Fuentes H C, Kippelen B 2008 Appl. Phys. Lett. 93 242111
[8] Bartic C, Jansen H, Campitelli A, Borghs S 2002 Org. Electron. 3 65
[9] Raval H N, Tiwari S P, Navan R R, Mhaisalkar, Rao V R 2009 IEEE Electron Device Lett. 30 484
[10] Liu Y R, Chen W, Liao R 2010 Acta Phys. Sin. 59 8088 (in Chinese) [刘玉荣, 陈伟, 廖荣 2010 59 8088]
[11] Kim D H, Cho N G, Kim H G, Kim H S, Hong J M, Kim I D, 2008 Appl. Phys. Lett. 93 032901
[12] Larsson O, Said E, Berggren M, Crispin X 2009 Adv. Funct. Mater. 19 3334
[13] Cho J H, Lee J, He Y, Kim B, Lodge P T, Frisbie C D 2008 Adv. Mater. 20 686
[14] Sun J, Liu H X, Jiang J, Lu A X, Wan Q 2010 J. Mater. Chem. 20 8010
[15] Lu A X, Sun J, Jiang J, Wan Q 2009 Appl. Phys. Lett. 95 222905
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[1] RyuMK, Yang S, Park S, Hwang C S, Jeong J K 2009 Appl. Phys. Lett. 95 072104
[2] Xu T N, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J 2010 Acta Phys. Sin. 59 5018(in Chinese) [徐天宁, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 59 5018]
[3] Lim W, Douglas E A, Kim S H, Norton D P, Pearton S J, Ren F, Shen H, Chang W H 2008 Appl. Phys. Lett. 93 252103
[4] Jeong J K, Jeong J H, Yang HW, Park J S, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 91 113505
[5] Kim I D, Choi Y W, Tuller H L 2005 Appl. Phys. Lett. 87 043509
[6] Su N C, Wang J S, Chin A 2009 IEEE Electron Device Lett. 30 1317
[7] Kim J B, Fuentes H C, Kippelen B 2008 Appl. Phys. Lett. 93 242111
[8] Bartic C, Jansen H, Campitelli A, Borghs S 2002 Org. Electron. 3 65
[9] Raval H N, Tiwari S P, Navan R R, Mhaisalkar, Rao V R 2009 IEEE Electron Device Lett. 30 484
[10] Liu Y R, Chen W, Liao R 2010 Acta Phys. Sin. 59 8088 (in Chinese) [刘玉荣, 陈伟, 廖荣 2010 59 8088]
[11] Kim D H, Cho N G, Kim H G, Kim H S, Hong J M, Kim I D, 2008 Appl. Phys. Lett. 93 032901
[12] Larsson O, Said E, Berggren M, Crispin X 2009 Adv. Funct. Mater. 19 3334
[13] Cho J H, Lee J, He Y, Kim B, Lodge P T, Frisbie C D 2008 Adv. Mater. 20 686
[14] Sun J, Liu H X, Jiang J, Lu A X, Wan Q 2010 J. Mater. Chem. 20 8010
[15] Lu A X, Sun J, Jiang J, Wan Q 2009 Appl. Phys. Lett. 95 222905
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