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The N doped SiO2 thin films were prepared by radio frequency magnetron reaction sputtering technique. It is found that the N doped SiO2 thin films have ferromagnetism. Magnetic order is easy to form in the system in which silicon nitride particles with relatively small sizes are distributed uniformly in silicon oxide matrix. When the substrate temperature of the film was 400℃，the N doped SiO2 thin film possesses the largest saturation magnetization and coercivity，being 35 emu/cm3 and 75 Oe，respectively. The magnetism of the film may originate from the interfaces between silicon nitride and silicon oxide. Calculations based on the first principles show that net spins exist in the N doped SiO2 film. The orbit magnetic moments caused by the charge transfer through the interface between silicon nitride and silicon oxide also contribute to the ferromagnetism of the film.
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Keywords:
- N doped SiO2 thin films /
- radio frequency magnetron reaction sputtering /
- interface magnetism /
- substrate temperature
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[1] ［1］Wolf S A，Awschalom D D，Buhrman R A，Daughton J M，Molnár S von，Roukes M L，Chtchelkanova A Y，Treger D M 2001 Science 294 1488
[2] ［2］Song H Q，Wang Y，Yan S S，Mei L M，Zhang Z 2008 Acta Phys. Sin. 57 4534 (in Chinese) ［宋红强、王勇、颜世申、梅良模、张泽 2008 57 4534］
[3] ［3］Venkatesan M，Fitzgerald C B，Coey J M D 2004 Nature 430 630
[4] ［4］Xu Q，Schmidt H，Zhou S，Potzger K，Helm M，Hochmuth H，Lorenz M，Setzer A，Esquinazi P，Meinecke C，Grundmann M 2008 Appl. Phys. Lett. 92 082508
[5] ［5］Hong H N，Poirot N，Sakai J 2008 Phys. Rev. B 77 033205
[6] ［6］Hong N H，Sakai J，Poirot N，Brize V 2006 Phys. Rev. B 73 132404
[7] ［7］Sundaresan A，Bhargavi R，Rangarajan N，Siddesh U，Rao C N R 2006 Phys. Rev. B 74 161306R
[8] ［8］Sundaresan A，Rao C N R 2009 Nano Today 4 96
[9] ［9］Carmeli I，Leitus G，Naaman R，Reich S，Vager Z 2003 J. Chem.Phys. 118 10372
[10] ］Crespo P，Litran R，Rojas T C，Multigner M，de la Fuente J M，Sanchez-Lopez J C，Garcia M A，Hernando A，Penades S，Fernandez A 2004 Phys. Rev. Lett. 93 087204
[11] ］Yamamoto Y，Miura T，Teranishi T，Hori H，Suzuki M，Kawamura N，Miyagawa H，Nakamura T，Kobayashi K 2004 Phys. Rev. Lett. 93 116801
[12] ］Esquinazi P，Spemann D，Hhne R，Setzer A，Han K H，Butz T 2003 Phys. Rev. Lett. 91 227201
[13] ］Chen S，Wu Q Y，Chen Z G，Xu G G，Huang Z G 2009 Acta Phys. Sin. 58 2011 ( in Chinese) ［陈珊、吴青云、陈志高、许桂贵、黄志高 2009 58 2011］
[14] ］Guan L X，Tao J G，Huan C H A，Kuo J L，Wang L 2009 Appl. Phys. Lett. 95 012509
[15] ］Kopnov G，Vager Z，Naaman R，2007 Adv. Mater. 19 925
[16] ］Bouvet D，Clivaz P A，Dutoit M 1996 J. Appl .Phys. 79 7114
[17] ］Kaluri S R，Hess D W 1996 Appl. Phys. Lett. 69 1053
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