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本文采用等离子体增强化学气相沉积技术(PECVD)在室温条件下制备了具有双电层效应的二氧化硅(SiO2) 固体电解质薄膜, 并以此SiO2薄膜作为栅介质制备了氧化铟锌(IZO)双电层薄膜晶体管. 本文系统地研究了SiO2固体电解质中的质子特性对双电层薄膜晶体管性能的影响, 研究结果表明, 经过纯水浸泡的SiO2固体电解质薄膜可以诱导出较多的可迁移质子, 因此表现出较大的双电层电容. 由于SiO2固体电解质薄膜具有质子迁移特性, 晶体管的转移特性曲线呈现出逆时针方向的洄滞现象, 并且这一洄滞效应随着栅极电压扫描速率的增加而增大. 进一步对薄膜晶体管的偏压稳定性进行测试, 发现晶体管的阈值电压的变化遵循了拉升指数函数(stretched exponential function)关系.SiO2-based solid state electrolyte films are deposited at room temperature by using the plasma-enhanced chemical vapor deposition (PECVD) technique. An electric-double-layer (EDL) effect has been observed. Then, indium-zinc-oxide thin-film transistors (IZO TFTs) are fabricated by using such SiO2 films as dielectrics in a self-assembling process through a shadow mask. The IZO films for source/drain electrodes and channel are deposited on the nanogranular SiO2 film by RF sputtering the IZO target in an Ar ambient. Such TFTs exhibit a good performance at an ultralow operation voltage of 1.5 V, with a high field-effect mobility of 11.9 cm2/Vs, a small subthreshold swing of 94.5 mV/decade, and a large current on-off ratio of 7.14×106. Effects of protons in the SiO2-based solid state electrolyte films on the electrical performances of the IZO TFTs are also studied. It is observed that a big EDL capacitance can be obtained for SiO2 films dipped in pure water, as a result of the fact that there are more protons in such SiO2 films. Because of the migration of protons in SiO2 electrolytes, an anti-clockwise hysteresis is observed on the transfer curve. Moreover, a bigger hysteresis is observed at a higher gate voltage scan rate. Gate bias stressing stabilities are also studied the shifts in threshold voltage are observed to obey a stretched exponential function.
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Keywords:
- indium zinc oxide thin-film-transistors (IZO TFTs) /
- SiO2-based solid electrolyte /
- electric-double-layer (EDL) /
- proton characteristics
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[2] Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Pereira L M N, Martins R F P 2005 Adv. Mater. 17 590
[3] Xu H, Lan L F, Li M, Luo D X, Xiao P, Lin Z G, Ning H L, Peng J B 2014 Acta Phys. Sin. 63 038501 (in Chinese) [徐华, 兰林锋, 李民, 罗东向, 肖鹏, 林振国, 宁洪龙, 彭俊彪 2014 63 038501]
[4] Chen Y Y, Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J, Wu H Z 2014 Chin. Phys. B 23 026101
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[7] Ozel T, Gaur A, Rogers J A, Shim M 2005 Nano. Lett. 5 905
[8] Thiemann S, Sachnov S. Porscha S, Wasserscheid P, Zaumseil J 2012 J. Phys. Chem. C 116 13536
[9] Zhu D M, Men C L, Cao M, Wu G D 2013 Acta Phys. Sin. 62 117305 (in Chinese) [朱德明, 门传玲, 曹敏, 吴国栋 2013 62 117305]
[10] Zhu L Q, Wu G D, Zhou Z M, Dou W, Zhang H L, Wan Q 2013 Appl. Phys. Lett. 102 043501
[11] Guo D, Zhuo M, Zhang X, Xu C, Jiang J, Gao F, Wan Q, Li Q, Wang T 2013 Anal. Chim. Acta 773 83
[12] Zhu L Q, Wu G D, Zhou Z M, Dou W, Zhang H L 2013 Nanoscale 5 1980
[13] Chen H S, Sun Z Y, Shao J C 2011 Bull. Chin. Ceram. Soc. 30 0934 (in Chinese) [陈和生, 孙振亚, 邵景昌 2011 硅酸盐通报 30 0934]
[14] Jiang J 2012 Ph. D. Dissertation (Changsha: Hunan University) (in Chinese) [蒋杰 2012 博士学位论文 (长沙: 湖南大学)]
[15] Liu Y R, Su J, Lai P T, Yao R H 2014 Chin. Phys. B 23 068501
[16] Lee S W, Suh D S, Lee S Y, Lee Y H 2014 Appl. Phys. Lett. 104 163506
[17] Roh J, Kang C M, Kwak J, Lee C, Jung B J 2014 Appl. Phys. Lett. 104 173301
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[1] Arai T, Morosawa N, Tokunaga K, Terai Y, Fukumoto E, Fujimori T, Sasaoka T 2011 J. Soc. Inf. Displa. 19 205
[2] Fortunato E M C, Barquinha P M C, Pimentel A C M B G, Goncalves A M F, Marques A J S, Pereira L M N, Martins R F P 2005 Adv. Mater. 17 590
[3] Xu H, Lan L F, Li M, Luo D X, Xiao P, Lin Z G, Ning H L, Peng J B 2014 Acta Phys. Sin. 63 038501 (in Chinese) [徐华, 兰林锋, 李民, 罗东向, 肖鹏, 林振国, 宁洪龙, 彭俊彪 2014 63 038501]
[4] Chen Y Y, Wang X, Cai X K, Yuan Z J, Zhu X M, Qiu D J, Wu H Z 2014 Chin. Phys. B 23 026101
[5] Hoffman R L, Norris B J, Wager J F 2003 Appl. Phys. Lett. 82 733
[6] Suresh A, Wellenius P, Dhawan A, Muth J 2007 Appl. Phys. Lett. 90 123512
[7] Ozel T, Gaur A, Rogers J A, Shim M 2005 Nano. Lett. 5 905
[8] Thiemann S, Sachnov S. Porscha S, Wasserscheid P, Zaumseil J 2012 J. Phys. Chem. C 116 13536
[9] Zhu D M, Men C L, Cao M, Wu G D 2013 Acta Phys. Sin. 62 117305 (in Chinese) [朱德明, 门传玲, 曹敏, 吴国栋 2013 62 117305]
[10] Zhu L Q, Wu G D, Zhou Z M, Dou W, Zhang H L, Wan Q 2013 Appl. Phys. Lett. 102 043501
[11] Guo D, Zhuo M, Zhang X, Xu C, Jiang J, Gao F, Wan Q, Li Q, Wang T 2013 Anal. Chim. Acta 773 83
[12] Zhu L Q, Wu G D, Zhou Z M, Dou W, Zhang H L 2013 Nanoscale 5 1980
[13] Chen H S, Sun Z Y, Shao J C 2011 Bull. Chin. Ceram. Soc. 30 0934 (in Chinese) [陈和生, 孙振亚, 邵景昌 2011 硅酸盐通报 30 0934]
[14] Jiang J 2012 Ph. D. Dissertation (Changsha: Hunan University) (in Chinese) [蒋杰 2012 博士学位论文 (长沙: 湖南大学)]
[15] Liu Y R, Su J, Lai P T, Yao R H 2014 Chin. Phys. B 23 068501
[16] Lee S W, Suh D S, Lee S Y, Lee Y H 2014 Appl. Phys. Lett. 104 163506
[17] Roh J, Kang C M, Kwak J, Lee C, Jung B J 2014 Appl. Phys. Lett. 104 173301
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