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为了简化了AlN/C复合泡沫材料的制备流程, 本文采用复分解反应法制备AlN纳米材料, 并通过800℃退火处理使其在碳泡沫衬底上重结晶为六方相AlN纳米线. 通过形貌表征测试, 纳米线为表面光滑的长直形圆柱体, 直径约50 nm, 长度10 m以上, 在碳微球表面沿[001]方向生长. 同时, 采用VLS生长机理对纳米线的生长进行了解释. 对样品光致发光谱的研究表明, 中心波长423 nm处存在一尖锐发光峰且随温度升高发生明显的红移现象, 系C替N杂质能级跃迁发光所致. 样品在紫光波段具有良好的光致发光特性, 有望应用于光探测器领域.To simplify preparation process of AlN/C composite foam, AlN nanomaterials are prepared via double decomposition reaction and then 800℃ annealing process to recrystallize hexagonal AlN (h-AlN) nanowires on carbon foam substrate. Fore the morphology characterization it follows that, h-AlN nanowires with straight cylindrical morphology grow along the [001]direction on carbon microspheres surface and are about 50 nm in diameter and several micrometers in length. Meanwhile, the growth mechanism of nanowire is interpreted as vapor-liquid-solid(VLS) process. The photoluminescence(PL) spectrum of as-prepared sample also researched, and the results show that a sharp photoluminescence peak appears at 423 nm and shifts toward the red side with temperature increasing. The peak is attributed to the transition luminescence, owing to the substitution of C for N impurity energy level. The sample has good PL character in purple light band and is potential to be used the in photodetector field.
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Keywords:
- aluminum nitride nanowires /
- carbon foam /
- double decomposition reaction /
- photoluminescence
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[3] Lv H M, Chen G D, Yan G J, Ye H G 2007 Chinese Physics 16 2814
[4] Li Z J, Tian M, He L L 2011 Acta Phys. Sin. 60 098101 (in Chinese) [李志杰, 田鸣, 贺连龙 2011 60 098101]
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[18] Erley G, Gorer S, Penner R M 1998 Appl. Phys. Lett. 72 2301
[19] Zhao C, Lv H M, Wei P 2011 Carbon Techniques 30 10 (in Chinese) [赵超, 吕惠民, 魏萍 2011 炭素技术 30 10]
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[22] Zhang Y F, Sun Y L 2010 Coal Conversion 33 19 (in Chinese) [张永发, 孙亚玲 2010 煤炭转化 33 19]
[23] Tansley T L, Egan R J 1992 Phys. Rev. B 45 10942
[24] Hou X, Yue C, Kumar Singh A, Zhang M, Chou K 2010 J. Solid State Chem. 183 963
[25] Jung W, Uk Joo H 2005 J. Cryst. Growth 285 566
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[1] Slack G A, McNelly T F 1976 J. Cryst. Growth 34 263
[2] Taniyasu Y, Kasu M 2011 Appl. Phys. Lett. 98 131910
[3] Lv H M, Chen G D, Yan G J, Ye H G 2007 Chinese Physics 16 2814
[4] Li Z J, Tian M, He L L 2011 Acta Phys. Sin. 60 098101 (in Chinese) [李志杰, 田鸣, 贺连龙 2011 60 098101]
[5] Gao X Q, Guo Z Y, Cao D X, Zhang Y F, Sun H Q, Deng B 2010 Acta Phys. Sin. 59 3418 (in Chinese) [高小奇, 郭志友, 曹东兴, 张宇飞, 孙慧卿, 邓贝 2010 59 3418]
[6] Kida M, Weber L, Monachon C, Mortensen A 2011 J. Appl. Phys. 109 64907
[7] Shen L H, Cui Q L, Cheng T M 2008 Electronic Components and Materials 27 78 (in Chinese) [沈龙海, 崔启良, 成泰民 2008 电子元件与材料 27 78]
[8] Yang S L, Gao R S, Yu R H 2009 Rare Metal Materials and Engineering 38 991 (in Chinese) [杨松林, 高润生, 于荣海 2009 稀有金属材料与工程 38 991]
[9] Zhang Q X, Wang Y F, Wang H J 1998 The Chinese Journal of Nonferrous Metals 8 177 (in Chinese) [章桥新, 王玉伏, 汪惠娟 1998 中国有色金属学报 8 177]
[10] Yang S L, Niu P L,Yu R H 2010 J. Chin. Ceram. Soc. 38 1297 (in Chinese) [杨松林, 牛培利, 于荣海 2010 硅酸盐学报 38 1297]
[11] Ford W 1964 U.S. Patent 3121050
[12] Bao Y, Zhan L, Wang C, Wang Y, Qiao W, Ling L 2011 Mater. Lett. 65 3154
[13] Zhang S, Liu M, Gan L, Wu F, Xu Z, Hao Z, Chen L 2010 New Carbon Mater. 25 9
[14] Luo R, Ni Y, Li J, Yang C, Wang S 2011 Mater. Sci. Eng. A 528 2023
[15] Li W Q, Zhang H B, Xiong X, Xiao F 2010 Mater. Sci. Eng. A 527 2993
[16] Xu S, Qiao G, Wang H, Li D, Lu T 2008 Mater. Lett. 62 4549
[17] Tian Z, Li K Z, Li H J, Shi Z H 2008 J. Inorg. Mater. 23 1171 (in Chinese) [田卓, 李克智, 李贺军, 石振海 2008 无机材料学报 23 1171]
[18] Erley G, Gorer S, Penner R M 1998 Appl. Phys. Lett. 72 2301
[19] Zhao C, Lv H M, Wei P 2011 Carbon Techniques 30 10 (in Chinese) [赵超, 吕惠民, 魏萍 2011 炭素技术 30 10]
[20] Lv H M, Shi Z H, Zhao C, Wei P 2010 Acta Phys. Sin. 59 7956 (in Chinese) [吕惠民, 石振海, 赵超, 魏萍 2010 59 7956]
[21] Shi Z H, Li K Z, Li H J, Wang C, Li Z Q 2005 J. Funct. Mater. 36 1944 (in Chinese) [石振海, 李克智, 李贺军, 王闯, 李照谦 2005 功能材料 36 1944]
[22] Zhang Y F, Sun Y L 2010 Coal Conversion 33 19 (in Chinese) [张永发, 孙亚玲 2010 煤炭转化 33 19]
[23] Tansley T L, Egan R J 1992 Phys. Rev. B 45 10942
[24] Hou X, Yue C, Kumar Singh A, Zhang M, Chou K 2010 J. Solid State Chem. 183 963
[25] Jung W, Uk Joo H 2005 J. Cryst. Growth 285 566
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