[1] |
Tang Jia-Xin, Li Zhan-Hai, Deng Xiao-Qing, Zhang Zhen-Hua. Electrical contact characteristics and regulatory effects of GaN/VSe2 van der Waals heterojunction. Acta Physica Sinica,
2023, 72(16): 167101.
doi: 10.7498/aps.72.20230191
|
[2] |
Hao Guo-Qiang, Zhang Rui, Zhang Wen-Jing, Chen Na, Ye Xiao-Jun, Li Hong-Bo. Regulation and control of Schottky barrier in graphene/MoSe2 heteojuinction by asymmetric oxygen doping. Acta Physica Sinica,
2022, 71(1): 017104.
doi: 10.7498/aps.71.20210238
|
[3] |
Deng Xu-Liang, Ji Xian-Fei, Wang De-Jun, Huang Ling-Qin. First principle study on modulating of Schottky barrier at metal/4H-SiC interface by graphene intercalation. Acta Physica Sinica,
2022, 71(5): 058102.
doi: 10.7498/aps.71.20211796
|
[4] |
Ding Hua-Jun, Xue Zhong-Ying, Wei Xing, Zhang Bo. Effects of ultra-thin aluminium interlayer on Schottky barrier parameters of NiGe/n-type Ge Schottky barrier diode. Acta Physica Sinica,
2022, 71(20): 207302.
doi: 10.7498/aps.71.20220320
|
[5] |
Xu Han, Zhang Lu. Charge carrier transport in oxygen-ion conducting electrolytes with considering space charge layer effect. Acta Physica Sinica,
2021, 70(6): 068801.
doi: 10.7498/aps.70.20201651
|
[6] |
Xu Han, Zhang Lu. Influences of space charge layer effect on oxygen vacancy transport adjacent to three phase boundaries within solid oxide fuel cells. Acta Physica Sinica,
2021, 70(12): 128801.
doi: 10.7498/aps.70.20210012
|
[7] |
Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei. Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica,
2020, 69(15): 157302.
doi: 10.7498/aps.69.20191987
|
[8] |
Xu Feng1\2, Yu Guo-Hao, Deng Xu-Guang, Li Jun-Shuai, Zhang Li, Song Liang, Fan Ya-Ming, Zhang Bao-Shun. Current transport mechanism of Schottky contact of Pt/Au/n-InGaN. Acta Physica Sinica,
2018, 67(21): 217802.
doi: 10.7498/aps.67.20181191
|
[9] |
Tao Peng-Cheng, Huang Yan, Zhou Xiao-Hao, Chen Xiao-Shuang, Lu Wei. First principles investigation of the tuning in metal-MoS2 interface induced by doping. Acta Physica Sinica,
2017, 66(11): 118201.
doi: 10.7498/aps.66.118201
|
[10] |
Wu Kong-Ping, Sun Chang-Xu, Ma Wen-Fei, Wang Jie, Wei Wei, Cai Jun, Chen Chang-Zhao, Ren Bin, Sang Li-Wen, Liao Mei-Yong. Interface electronic structure and the Schottky barrier at Al-diamond interface: hybrid density functional theory HSE06 investigation. Acta Physica Sinica,
2017, 66(8): 088102.
doi: 10.7498/aps.66.088102
|
[11] |
Zhao Shou-Ren, Huang Zhi-Peng, Sun Lei, Sun Peng-Chao, Zhang Chuan-Jun, Wu Yun-Hua, Cao Hong, Wang Shan-Li, Chu Jun-Hao. A detailed study of the effect of Schottky barrier on the dark current density-voltage characteristics of CdS/CdTe solar cells. Acta Physica Sinica,
2013, 62(16): 168801.
doi: 10.7498/aps.62.168801
|
[12] |
Liu Ya-Jie. Prediction of the magneto-resistivity of manganese oxides La0.67Ca0.33MnO3 and Pr0.7Sr0.3MnO3 via temperature and magnetic field. Acta Physica Sinica,
2013, 62(1): 017601.
doi: 10.7498/aps.62.017601
|
[13] |
Wu Mei-Ling, Shi Da-Wei, Kan Zhi-Lan, Wang Rui-Long, Ding Yi-Min, Xiao Hai-Bo, Yang Chang-Ping. Comparison bwtween intrinsic and interfacial electrical pulse induced resistance effects in La0.5Ca0.5MnO3 ceramics. Acta Physica Sinica,
2013, 62(20): 207302.
doi: 10.7498/aps.62.207302
|
[14] |
Medvedeva I, Chen Shun-Sheng, Huang Chang, Wang Rui-Long, Yang Chang-Ping. The electrical transport properties of Ag/Nd0.7Sr0.3MnO3 ceramic interface. Acta Physica Sinica,
2011, 60(3): 037304.
doi: 10.7498/aps.60.037304
|
[15] |
Yang Chang-Ping, Chen Shun-Sheng, Dai Qi, Song Xue-Ping. The origin of EPIR effect in Nd0.7Sr0.3MnO3 ceramics. Acta Physica Sinica,
2011, 60(11): 117202.
doi: 10.7498/aps.60.117202
|
[16] |
Xiu Ming-Xia, Ren Jun-Feng, Wang Yu-Mei, Yuan Xiao-Bo, Hu Gui-Chao. Effect of Schottky barrier on spin injection in ferromagnetic/organic semiconductor structure. Acta Physica Sinica,
2010, 59(12): 8856-8861.
doi: 10.7498/aps.59.8856
|
[17] |
Chen Shun-Sheng, Yang Chang-Ping, Deng Heng, Sun Zhi-Gang. Microstructure dependence of the electroresistance of Nd0.7Sr0.3MnO3. Acta Physica Sinica,
2008, 57(6): 3798-3802.
doi: 10.7498/aps.57.3798
|
[18] |
Yang Chang-Ping, Chen Shun-Sheng, Dai Qi, Guo Ding-He, Wang Hao. Spin-dependent electroresistance in Nd0.67Sr0.33MnOy(y<3.0). Acta Physica Sinica,
2007, 56(8): 4908-4913.
doi: 10.7498/aps.56.4908
|
[19] |
Li Ping-Jian, Zhang Wen-Jing, Zhang Qi-Feng, Wu Jin-Lei. The influence of contact metal in carbon nanotube transistor. Acta Physica Sinica,
2006, 55(10): 5460-5465.
doi: 10.7498/aps.55.5460
|
[20] |
LI HONG-WEI, WANG TAI-HONG. THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica,
2001, 50(12): 2501-2505.
doi: 10.7498/aps.50.2501
|