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The transport properties of interface between metal electrode and Nd0.7Sr0.3MnO3 bulk have been investigated under 2-wire measuring mode using permeating Ag and Ag-glue contact, respectively. The results show that, for the permeating Ag contact, the measured results are similar to that of 4-wire measurement, and an ohmic character is obtained without EPIR effect. However, a strongly nonlinear V-I curve appears and exhibits a stable EPIR effect for the Ag-glue contact. Besides, It also shows remarkable difference when loaded with alternating current for the two different kinds of contacts. For the former, the real part of impedance R' increases with increasing frequency which is attributable to the skin effect; for the latter, however, the R' is of about megohm order of magnitude and the R' peak decreases with increasing frequency. Moreover, the R' peak splits into two peaks which respectively move to high and low temperature when further increasing the frequency. In combination with the data of scanning electron microscopy, the differences of electrical transport are discussed.
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Keywords:
- interface /
- contact resistance /
- EPIR effect /
- perovskite structure manganite
[1] Rüggeberg F, Klein A 2006 Appl. Phys. A 82 281
[2] 7971
[3] Nakasaka T, Urago K, Sugiura M, Kobayashi T 2001 Jpn. J. Appl. Phys. (Part 2) 40 L518
[4] P217 (in Chinese) [刘恩科、 朱秉升、 罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第217页]
[5] Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立、 杨忠华、 方戈亮 2009 58 3364]
[6] Li Y B, Liu X, Li Z H, Fu Y, A. S. Kamzin, Wei F L, Yang Z 2009 Acta Phys. Sin. 58 7972 (in Chinese) [李彦波、 刘 曦、 李正华、 付 煜、 阿·谢·卡姆津、 魏福林、 杨 正 2009 58 7972]
[7] Wang C, Wang C Y 2009 Chin. Phys. B 18 3928
[8] Klein A, Suberlich F, Spth B, Schulmeyer T, Kraft D 2007 J. Mater. Sci. 42 1890
[9] Tiefenbacher S, Pettenkofer C, Jaegermann W 2002 J. Appl. Phys. 91 1984
[10] Van de Krol R, Tuller H L 2002 Solid State Ionics 150 167
[11] Krber C, Harvey S P, Mason T O, Klein A 2008 Surf. Sci. 602 3246
[12] Gassenbauer Y, Wachau A, Klein A 2009 Phys. Chem. Chem. Phys. 11 3049
[13] Maier J 2009 Phys. Chem. Chem. Phys. 11 3011
[14] Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[15] Andreasson B P, Janousch M, Staub U, Meijer G I, Delley B 2007 Mater. Sci. Eng. B 144 60
[16] Gross R, Alff L, Büchner B, Freitag B H, Hüfener C, Klein J, Lu Y F, Mader W, Philipp J B, Rao M S R, Reutler P, Ritter S, Thienhaus S, Uhlenbruck S, Wiedenhorst B 2000 J. Magn. Magn. Mater. 211 150
[17] Hwang H, Cheong S W, Ong N P, Batlogg B 1996 Phys. Rev. Lett. 77 2041
[18] Gupta A, Gong G Q, Xiao G, Duncombe P R, Lecoeur P, Trouilloud P, Wang Y Y, Dravid V P, Sun J Z 1996 Phys. Rev. B 54 R15629
[19] Mathur N D, Burnell G, Isaac S P, Jackson T J, Teo B S, MacManus-Driscoll J L, Cohen L F, Evetts J E, Blamire M G 1997 Nature 387 266
[20] Maurice J L, Devos I, Casanove M J, Carrétéro C, Gachet G, Herranz G, Crété D G, Imhoff D, Barthélémy A, Bibes M, Bouzehouane K, Deranlot C, Fusil S, Jacquet é, Domengès B, Ballutaud D 2007 Mater. Sci. Eng. B 144 1
[21] Yang C P, Chen S S, Dai Q, Guo D H, Wang H 2007 Acta Phys. Sin. 56 4908 (in Chinese) [杨昌平、 陈顺生、 戴 琪、 郭定和、 王 浩 2007 56 4908]
[22] Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[23] Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
[24] Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[25] Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 975
[26] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 85 4073
[27] Li Q, Wang Z G, Liu S, Xing Z W, Liu M 2007 Acta Phys. Sin. 56 1637 (in Chinese) [李 倩、 王之国、 刘 甦、 邢钟文、 刘 楣 2007 56 1637]
[28] Chen S S, Yang C P, Xu L F, Yang F J, Wang H B, Wang H, Xiong L B, Yu Y, Medvedeva I V, Brner K 2010 Solid State Commun. 150 240
[29] Liu L P, Zhao Z J, Liu S, Huang C X, Wu Z M, Yang X L 2006 Acta Phys. Sin. 55 2014 (in Chinese) [刘龙平、 赵振杰、 黄灿星、 吴志明、 杨燮龙 2006 55 2014]
[30] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition)(Bei jing:Publishing House of Electronics Industry)
[31] Reagor D W, Lee S Y, Li Y, Jia Q X 2004 J. Appl. Phys. 95
[32] Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427
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[1] Rüggeberg F, Klein A 2006 Appl. Phys. A 82 281
[2] 7971
[3] Nakasaka T, Urago K, Sugiura M, Kobayashi T 2001 Jpn. J. Appl. Phys. (Part 2) 40 L518
[4] P217 (in Chinese) [刘恩科、 朱秉升、 罗晋生 2008 半导体物理学(第7版)(北京:电子工业出版社) 第217页]
[5] Liu G L, Yang Z H, Fang G L 2009 Acta Phys. Sin. 58 3364 (in Chinese) [刘贵立、 杨忠华、 方戈亮 2009 58 3364]
[6] Li Y B, Liu X, Li Z H, Fu Y, A. S. Kamzin, Wei F L, Yang Z 2009 Acta Phys. Sin. 58 7972 (in Chinese) [李彦波、 刘 曦、 李正华、 付 煜、 阿·谢·卡姆津、 魏福林、 杨 正 2009 58 7972]
[7] Wang C, Wang C Y 2009 Chin. Phys. B 18 3928
[8] Klein A, Suberlich F, Spth B, Schulmeyer T, Kraft D 2007 J. Mater. Sci. 42 1890
[9] Tiefenbacher S, Pettenkofer C, Jaegermann W 2002 J. Appl. Phys. 91 1984
[10] Van de Krol R, Tuller H L 2002 Solid State Ionics 150 167
[11] Krber C, Harvey S P, Mason T O, Klein A 2008 Surf. Sci. 602 3246
[12] Gassenbauer Y, Wachau A, Klein A 2009 Phys. Chem. Chem. Phys. 11 3049
[13] Maier J 2009 Phys. Chem. Chem. Phys. 11 3011
[14] Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[15] Andreasson B P, Janousch M, Staub U, Meijer G I, Delley B 2007 Mater. Sci. Eng. B 144 60
[16] Gross R, Alff L, Büchner B, Freitag B H, Hüfener C, Klein J, Lu Y F, Mader W, Philipp J B, Rao M S R, Reutler P, Ritter S, Thienhaus S, Uhlenbruck S, Wiedenhorst B 2000 J. Magn. Magn. Mater. 211 150
[17] Hwang H, Cheong S W, Ong N P, Batlogg B 1996 Phys. Rev. Lett. 77 2041
[18] Gupta A, Gong G Q, Xiao G, Duncombe P R, Lecoeur P, Trouilloud P, Wang Y Y, Dravid V P, Sun J Z 1996 Phys. Rev. B 54 R15629
[19] Mathur N D, Burnell G, Isaac S P, Jackson T J, Teo B S, MacManus-Driscoll J L, Cohen L F, Evetts J E, Blamire M G 1997 Nature 387 266
[20] Maurice J L, Devos I, Casanove M J, Carrétéro C, Gachet G, Herranz G, Crété D G, Imhoff D, Barthélémy A, Bibes M, Bouzehouane K, Deranlot C, Fusil S, Jacquet é, Domengès B, Ballutaud D 2007 Mater. Sci. Eng. B 144 1
[21] Yang C P, Chen S S, Dai Q, Guo D H, Wang H 2007 Acta Phys. Sin. 56 4908 (in Chinese) [杨昌平、 陈顺生、 戴 琪、 郭定和、 王 浩 2007 56 4908]
[22] Liu S Q, Wu N J, Ignatiev A 2000 Appl. Phys. Lett. 76 2749
[23] Xie Y W, Sun J R, Wang D J, Liang S, Shen B G 2006 J. Appl. Phys. 100 033704
[24] Oka T, Nagaosa N 2005 Phys. Rev. Lett. 95 266403
[25] Baikalov A, Wang Y Q, Shen B, Lorenz B, Tsui S, Sun Y Y, Xue Y Y, Chu C W 2003 Appl. Phys. Lett. 83 975
[26] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 85 4073
[27] Li Q, Wang Z G, Liu S, Xing Z W, Liu M 2007 Acta Phys. Sin. 56 1637 (in Chinese) [李 倩、 王之国、 刘 甦、 邢钟文、 刘 楣 2007 56 1637]
[28] Chen S S, Yang C P, Xu L F, Yang F J, Wang H B, Wang H, Xiong L B, Yu Y, Medvedeva I V, Brner K 2010 Solid State Commun. 150 240
[29] Liu L P, Zhao Z J, Liu S, Huang C X, Wu Z M, Yang X L 2006 Acta Phys. Sin. 55 2014 (in Chinese) [刘龙平、 赵振杰、 黄灿星、 吴志明、 杨燮龙 2006 55 2014]
[30] Liu E K, Zhu B S, Luo J S 2008 Semiconductor Physics (the 7th edition)(Bei jing:Publishing House of Electronics Industry)
[31] Reagor D W, Lee S Y, Li Y, Jia Q X 2004 J. Appl. Phys. 95
[32] Shang D S, Wang Q, Chen L D, Dong R, Li X M, Zhang W Q 2006 Phys. Rev. B 73 245427
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