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In general, the electrical pulse induced resistance (EPIR) effect of perovskite manganite originates from the interfacial Schottky barrier between the metal electrode and the surface of sample. In this work, La0.5Ca0.5MnO3 (LCMO) ceramic samples are synthesized by solid state reaction and the transport properties, especially the EPIR effect are investigated using 4-wire measurement mode. Although the I-V curve of LCMO shows ohmic linearity under the 4-wire measurement mode at room temperature, a stable and remarkable EPIR effect can still be observed when the pulse voltage is more than the critical value. Through the comparison between the intrinsic EPIR under 4-wire mode and the interface one under 2-wire mode, we find that the intrinsic EPIR of LCMO has a smaller critical pulse voltage to induce the effect, but it has a better anti-fatigue property. The intrinsic EPIR effect is a novel one which is observed in rare earth doped manganites.
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Keywords:
- perovskite manganite /
- colossal electroresistance effect /
- interfacial electrical pulse induced resistance switching effect /
- Schottky barrier
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[5] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[6] Chen Y S, Chen L P, Lian G J, Xiong G 2009 Chin. Phys. Lett. 26 037201
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[8] Liu S Q, Wu N J, Ignative A 2000 Appl. Phys. Lett. 76 2749
[9] Waser R, Aono M 2007 Nat. Mater. 6 833
[10] Zhang H J, Zhang X P, Zhao Y G 2009 Chin. Phys. Lett. 26 077303
[11] Sawa A 2008 Mater. Today 11 28
[12] Xing Z W, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[13] Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[14] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 18 4073
[15] Rozenberg M J, Inoue I H, Sanchez M J, 2004 Phys. Rev. Lett. 92 178302
[16] Yang R, Li X M, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q, Chen L D 2009 Appl. Phys. Lett. 95 072105
[17] Yang C P, Chen S S, Dai Q, Song X P 2011 Acta Phys. Sin. 60 117202 (in Chinese) [杨昌平, 陈顺生, 戴琪, 宋学平2011 60 117202]
[18] Chen S S, Hang C, Wang R L, Yang C P, Medvedeva I V, Sun Z G 2011 Acta Phys. Sin. 60 037304 (in Chinese) [陈顺生, 黄 昌, 王瑞龙, 杨昌平, Medvedeva I V, 孙志刚 2011 60 037304]
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[1] Tokura Y, Tomioka Y 1999 J. Magn. Magn. Mater. 200 1
[2] Dong S, Liu J M 2010 Prog. Phys. 30 1 (in Chinese) [董帅, 刘俊明 2010物理学进展 30 1]
[3] Jiao Z K, Cao G H 2005 Magnetoelectronics (Vol. 1) (Hangzhou: Zhejiang University Press) pp222-433 (in Chinese) [焦正宽, 曹光旱2005磁电子学(第一版) (杭州:浙江大学出版社) 第222–433页]
[4] Kou Z Q, Ma X, Di N L, Li Q A, Cheng S H 2005 Chin. Phys. Soc. 14 1896
[5] Strukov D B, Snider G S, Stewart D R, Williams R S 2008 Nature 453 80
[6] Chen Y S, Chen L P, Lian G J, Xiong G 2009 Chin. Phys. Lett. 26 037201
[7] Wu Z H 2009 J. Shanghal Second Polytech. Univ. 26 28 (in Chinese) [吴子华 2009 上海第二工业大学学报 26 28]
[8] Liu S Q, Wu N J, Ignative A 2000 Appl. Phys. Lett. 76 2749
[9] Waser R, Aono M 2007 Nat. Mater. 6 833
[10] Zhang H J, Zhang X P, Zhao Y G 2009 Chin. Phys. Lett. 26 077303
[11] Sawa A 2008 Mater. Today 11 28
[12] Xing Z W, Chen X, Wu N J, Ignatiev A 2011 Chin. Phys. B 20 097703
[13] Meng Y, Zhang P J, Liu Z Y, Liao Z L, Pan X Y, Liang X J, Zhao H W, Chen D M 2010 Chin. Phys. B 19 037304
[14] Sawa A, Fujii T, Kawasaki M, Tokura Y 2004 Appl. Phys. Lett. 18 4073
[15] Rozenberg M J, Inoue I H, Sanchez M J, 2004 Phys. Rev. Lett. 92 178302
[16] Yang R, Li X M, Yu W D, Gao X D, Shang D S, Liu X J, Cao X, Wang Q, Chen L D 2009 Appl. Phys. Lett. 95 072105
[17] Yang C P, Chen S S, Dai Q, Song X P 2011 Acta Phys. Sin. 60 117202 (in Chinese) [杨昌平, 陈顺生, 戴琪, 宋学平2011 60 117202]
[18] Chen S S, Hang C, Wang R L, Yang C P, Medvedeva I V, Sun Z G 2011 Acta Phys. Sin. 60 037304 (in Chinese) [陈顺生, 黄 昌, 王瑞龙, 杨昌平, Medvedeva I V, 孙志刚 2011 60 037304]
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