The physical characteristic study on luminance uniformity and temperature for power GaN LEDs chip

Chen Huan-Ting; Lü Yi-Jun; Gao Yu-Lin; Chen Zhong; Zhuang Rong-Rong; Zhou Xiao-Fang; Zhou Hai-Guang

doi:10.7498/aps.61.167104

Abstract

In this paper, we study the relationship among current density distribution, heat and temperature based on current continuity equation, ohm law and three-dimensional heat transfer model. The relationship between luminance distribution and current spreading of GaN blue light emitting diode (LED) is studied. Luminance distribution is proved to be an effective method of distinguishing the performance of current spreading. Because of the close relationship among temperature, luminance distribution and current density, a qualitative method of optimizing electrode structure and current spreading is proposed. With different currents and heat sink temperatures, the current non-uniformity and the luminance distribution of LED are analyzed. Temperature or current density crowding results in heat accumulation, increase of non-radiative recombination and the restriction of the emitting photons, hence thermal flux is an important factor influencing the luminance distribution. Through carrier transport mechanism, the reason for the temperature influence on luminance distribution is explained. Optimized contact electrode structure can improve current spreading and luminance uniformity, also considerably increase the reliability of high power LED.

Keywords:

Authors and contacts

1.
Department of Physics and Electronic Information Engineering, Zhangzhou Normal University, Zhangzhou 363000, China;
2.
Fujian Engineering Research Center for Solid-State Lighting, Department of Electronic Science, Xiamen University, Xiamen 361005, China
Funds: Project supported by the Key Science Project of Fujian Province, China (Grant Nos. 2011H0021，2012H0039), the Science Project of Fujian Province, China (Grant No. 2011H6025), the Natural Science Foundation of Fujian Province, China (Grant No. 2011J05162), the Science Project of Education Bureau of Fujian Province, China (Grant No. JA11175), and the Foundation of Zhangzhou Normal University, China (Grant No. SJ1017).

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Cited By

[1]	Kim H S, Lee J M, Huh C, Kim S W, Kim D J, Park S J, Hwang H S 2000 Appl. Phys. Lett. 77 1903
[2]	Chen H T, Tao X H, Hui S Y R 2012 IEEE Trans. Power Electron. 27 2176
[3]	Li P L, Wang Z J, Yang Z P, Guo Q L 2011 Acta Phys. Sin. 60 047804 (in Chinese) [李盼来,王志军,杨志平,郭庆林 2011 60 047804]
[4]	Shen G D, Zhang J M, Zou D S, Xu C, Gu X L 2008 Acta Phys. Sin. 57 472 (in Chinese) [沈光地,张剑铭,邹德恕,徐晨,顾晓铃 2008 57 472]
[5]	Pan H P, Huang L W, Li R, Lin L, Chen Z Z, Zhang G Y, Hu X D 2007 Chin. J. Lumines. 28 114 (in Chinese) [潘华璞, 黄利伟, 李睿, 林亮, 陈志忠, 张国义, 胡晓东 2007 发光学报 28 114]
[6]	Deng Y L, Liao C J, Liu S H, Fan G H, Wen S S 2002 Chin. J. Lumines. 23 255 (in Chinese) [邓云龙, 廖常俊, 刘颂豪, 范广涵, 文尚胜 2002 发光学报 23 255]
[7]	Hwang S, Shim J 2008 IEEE Trans. Electron Dev. 55 1123
[8]	Guo X, Schubert E F 2001 Appl. Phys. Lett. 78 3337
[9]	Kim H, Park S J, Hwang H 2002 Appl. Phys. Lett. 77 1903
[10]	Chen H T, Lü Y J, Chen Z, Zhang H B, Gao Y L, Chen G L 2009 Acta Phys. Sin. 58 5700 (in Chinese) [陈焕庭,吕毅军, 陈忠,张海兵,高玉琳,陈国龙 2009 58 5700]
[11]	Huang S J, Wu H, Fan B F, Zhang B J, Wang G 2010 J. Appl. Phys. 107 054509
[12]	Zhao Y G, Mcinerney J G 1996 IEEE J. Quantum Electron 32 1950.
[13]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 078504 (in Chinese) [张运炎, 范广涵 2011 60 078504]
[14]	Chen H T, Gao Y L, Lu L J, Chen G L, Chen Z 2012 Heat Transfer Engineering 33 255
[15]	Gärditz C, Winnacker A, Schindler F, Paetzold R 2007 Appl. Phys. Lett. 90 103506
[16]	Li B Q, Liu Y H, Feng Y C 2008 Acta Phys. Sin. 57 477 (in Chinese) [李炳乾, 刘玉华, 冯玉春 2008 57 477]

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Vol. 61, Issue 16 - 2012-08-20

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