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The organic thin film photovoltaic device with a structure of tin indium oxide (ITO)/organic semiconductor/metal is fabricated. A rectifying behavior of the device is observed from the current-voltage characteristics. However, it is hard to judge the direction of internal electric field between the organic semiconductor and electrodes under Schottky contacts. In order to investigate the characteristics of Schottky contacts between the organic semiconductor and electrodes, the devices with the structures of ITO/organic insulator layer/organic semiconductor/metal and ITO/organic semiconductor/organic insulator layer/metal are fabricated. It is easy to judge the direction of internal electric field between the organic semiconductor and electrodes under Schottky contacts by the direction of transient photocurrent which is produced under the irradiation from the modulated laser. The correctness of judgement is further proved by the change of transient photocurrent intensity with a bias voltage applied.
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Keywords:
- Schottky /
- rectifying contact /
- organic photovoltaic device /
- transient photocurrent
[1] Gong X, Tong M H, Xia Y J, Cai W Z, Moon J S, Cao Y, Yu G, Shieh C L, Nilsson B, Heeger A J 2009 Science 325 1665
[2] Peumans P, Uchida S, Forrest S R 2003 Nature 425 158
[3] Li Y W, Liu P Y, Hou L T, Wu B 2010 Acta Phys. Sin. 59 1248(in Chinese) [李艳武, 刘彭义, 侯林涛, 吴冰 2010 59 1248]
[4] Li R H, Meng W M, Peng Y Q, Ma C Z, Wang R S, Xie H W, Wang Y, Ye Z C 2010 Acta Phys. Sin. 59 2126 (in Chinese) [李荣华, 孟卫民, 彭应全, 马朝柱, 汪润生, 谢宏伟, 王颖, 叶早晨 2010 59 2126]
[5] Zhang M L, Irfan, Ding H J, Gao Y L, Tang C W 2010 Appl. Phys. Lett. 96 183301
[6] Sulaiman K, Fakir M S 2011 Thin Solid Films 519 5219
[7] Racko J, Donoval D, Barus M, Nagl V, Grmanova A 1992 Solid State Electron. 35 913
[8] Horowitz G 1990 Adv. Mater. 2 287
[9] Chen S A, Fang Y 1993 Synthetic Met. 60 215
[10] Wöhrle D, Meissner D 1991 Adv. Mater. 3 129
[11] Thompson B C, Frėchet J M J 2008 Angew. Chem. Int. Ed. 47 58
[12] Sommer M, Huettner S, Thelakkat M 2010 J. Mater. Chem. 20 10788
[13] Park J Y, Han S H, Senthilarasu S, Lee S H 2007 Sol. Energ. Mat. Sol. C 91 751
[14] Brabec C J, Shaheen S E, Winder C, Sariciftci N S 2002 Appl. Phys. Lett. 80 1288
[15] Godoy A, Cattin L, Toumi L, Dìaz F R, Valle M A D, Soto G M, Kouskoussa B, Morsli M, Benchouk K, Khelil A, Bernède J C 2010 Sol. Energ. Mat. Sol. C 94 648
[16] Sharma G D, Balaraju P, Sharma S K, Roy M S 2008 Synthetic Met. 158 620
[17] Taima T, Chikamatsu M, Yoshida Y, Saito K, Yase K 2004 Appl. Phys. Lett. 85 1832
[18] Itoh E, Ohmori Y, Miyairi K 2004 Jpn. J. Appl. Phys. 43 817
[19] Dang Z M, Lin Y H, Nan C W 2003 Adv. Mater. 15 1625
[20] Gregorio R, Ueno E M 1999 J. Mater. Sci. 34 4489
[21] Westphalen M, Kreibig U, Rostalski J, Lüth H, Meissner D 2000 Sol. Energ. Mat. Sol. C 61 97
[22] Aziz M S 2006 Solid State Electron. 50 1238
[23] Hiromitsu I, Kinugawa G 2005 Jpn. J. Appl. Phys. 44 60
[24] Murtaza I, Qazi I, Karimov K S, Sayyad M H 2011 Physica B 406 533
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[1] Gong X, Tong M H, Xia Y J, Cai W Z, Moon J S, Cao Y, Yu G, Shieh C L, Nilsson B, Heeger A J 2009 Science 325 1665
[2] Peumans P, Uchida S, Forrest S R 2003 Nature 425 158
[3] Li Y W, Liu P Y, Hou L T, Wu B 2010 Acta Phys. Sin. 59 1248(in Chinese) [李艳武, 刘彭义, 侯林涛, 吴冰 2010 59 1248]
[4] Li R H, Meng W M, Peng Y Q, Ma C Z, Wang R S, Xie H W, Wang Y, Ye Z C 2010 Acta Phys. Sin. 59 2126 (in Chinese) [李荣华, 孟卫民, 彭应全, 马朝柱, 汪润生, 谢宏伟, 王颖, 叶早晨 2010 59 2126]
[5] Zhang M L, Irfan, Ding H J, Gao Y L, Tang C W 2010 Appl. Phys. Lett. 96 183301
[6] Sulaiman K, Fakir M S 2011 Thin Solid Films 519 5219
[7] Racko J, Donoval D, Barus M, Nagl V, Grmanova A 1992 Solid State Electron. 35 913
[8] Horowitz G 1990 Adv. Mater. 2 287
[9] Chen S A, Fang Y 1993 Synthetic Met. 60 215
[10] Wöhrle D, Meissner D 1991 Adv. Mater. 3 129
[11] Thompson B C, Frėchet J M J 2008 Angew. Chem. Int. Ed. 47 58
[12] Sommer M, Huettner S, Thelakkat M 2010 J. Mater. Chem. 20 10788
[13] Park J Y, Han S H, Senthilarasu S, Lee S H 2007 Sol. Energ. Mat. Sol. C 91 751
[14] Brabec C J, Shaheen S E, Winder C, Sariciftci N S 2002 Appl. Phys. Lett. 80 1288
[15] Godoy A, Cattin L, Toumi L, Dìaz F R, Valle M A D, Soto G M, Kouskoussa B, Morsli M, Benchouk K, Khelil A, Bernède J C 2010 Sol. Energ. Mat. Sol. C 94 648
[16] Sharma G D, Balaraju P, Sharma S K, Roy M S 2008 Synthetic Met. 158 620
[17] Taima T, Chikamatsu M, Yoshida Y, Saito K, Yase K 2004 Appl. Phys. Lett. 85 1832
[18] Itoh E, Ohmori Y, Miyairi K 2004 Jpn. J. Appl. Phys. 43 817
[19] Dang Z M, Lin Y H, Nan C W 2003 Adv. Mater. 15 1625
[20] Gregorio R, Ueno E M 1999 J. Mater. Sci. 34 4489
[21] Westphalen M, Kreibig U, Rostalski J, Lüth H, Meissner D 2000 Sol. Energ. Mat. Sol. C 61 97
[22] Aziz M S 2006 Solid State Electron. 50 1238
[23] Hiromitsu I, Kinugawa G 2005 Jpn. J. Appl. Phys. 44 60
[24] Murtaza I, Qazi I, Karimov K S, Sayyad M H 2011 Physica B 406 533
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