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In this article，we investigate the effect of cathode work function，exciton generation rate and temperature as well as carriers and field distribution in the organic layer on the open-circuit voltage （Voc） of single layer organic solar cell with Schottky contact by using numerical method. It is demonstrated that the decrease of cathode work function （Wc） contribute to the increase of open-circuit voltage until Wc is close to the LOMO level of the organic material. The open-circuit voltage reaches a saturation value，when Wc is smaller then |EL|，and this open-circuit saturation voltage increases with the enhancement of exciton generation rate. For a given anode and cathode work function，the open-circuit voltage increases with exicton generation rate. When the exciton generation rate reaches a certain value，Voc goes to saturation instead of further increase，and the saturation value equals to the built-in voltage. Additionally，the saturated Voc decreases with the increase of temperature，and the decrease rate reduces with the increase of the exciton generation rate.
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Keywords:
- open-circuit voltage /
- temperature /
- cathode work function /
- single layer organic solar cells
[1] ［1］Koster L J A，Mihailetchi V D，Blom P W M 2004 Appl. Phys. Lett. 88 052104
[2] ［2］Mandoc M M，Kooistra F B，Hummelen J C，Boer B de，Blom P W M 2007 Appl. Phys. Lett. 91 263505
[3] ［3］Yu H ZH，Peng J B，Zhou X M 2008 Acta Phys. Sin. 57 3898 （in Chinese）［於黄忠、彭俊彪、周晓明 2008 57 3898］
[4] ［4］Mandoc M M，Koster L J A，Blom P W M 2007 Appl. Phys. Lett. 90 133504［5］Nakamura Jun-ichi，Murata Kazuhiko，Takahashi Kohshin 2005 Appl. Phys. Lett. 87 132105
[5] ［6］Koster L J A，Mihailetchi V D，Xie H，Blom P W M 2005 Appl. Phys. Lett. 87 203502
[6] ［7］Xing H W，Peng Y Q，Yang Q S，Ma C Z，Wang R S，Li X S 2008 Acta Phys. Sin. 57 7374 （in Chinese）［邢宏伟、彭应全、杨青森、马朝柱、汪润生、李训栓 2008 57 7374］
[7] ［8］Koster L J A，Mihailetchi V D，Blom P W M 2006 Appl. Phys. Lett. 88 093511
[8] ［9］Lenes M，Koster L J A，Mihailetchi V D，Blom P W M 2006 Appl.Phys. Lett. 88 243502［10］You H L，Zhang C F 2009 Chin. Phys. B 18 2096
[9] ］Granstrom M，Petritsch K，Arias A C，Lux A，Andersson M R，Friend R H 1998 Nature 395 257
[10] ］Mihailetchi V D，Blom P W M，Hummelen J C 2003 J Appl. Phys. 94 1015
[11] ］Liu J，Shi Y，Yang Y 2001 Adv. Funct. Mater. 11 420
[12] ］Brabec C J，Cravino A，Meissner D，Serdar Sariciftci N，Thomas Fromherz，Minze T Rispens，Sanchez Luis，Hummelen Jan C 2001 Adv. Funct. Mater. 11 374
[13] ］Koster L J A，Smits E C P，Mihailetchi V D，Blom P W M 2005 Phys. Rev. B 72 085205
[14] ］GUO Zijie，XING Hongwei，WANG Yuhang，Ma Yuejie，Liu Dequan，Ma Chaozhu，Peng Yingquan，Li Junwang 2008 Optoelectron. Lett. 4 0410
[15] ］Langevin 1903 Ann Chim Phys. 28 433
[16] ］Scott J C，Ramos S，Malliaras G G 1999 Sci. Technol. 43 234
[17] ］Malliaras G G 1998 J. Appl. Phys. 84 1583
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[1] ［1］Koster L J A，Mihailetchi V D，Blom P W M 2004 Appl. Phys. Lett. 88 052104
[2] ［2］Mandoc M M，Kooistra F B，Hummelen J C，Boer B de，Blom P W M 2007 Appl. Phys. Lett. 91 263505
[3] ［3］Yu H ZH，Peng J B，Zhou X M 2008 Acta Phys. Sin. 57 3898 （in Chinese）［於黄忠、彭俊彪、周晓明 2008 57 3898］
[4] ［4］Mandoc M M，Koster L J A，Blom P W M 2007 Appl. Phys. Lett. 90 133504［5］Nakamura Jun-ichi，Murata Kazuhiko，Takahashi Kohshin 2005 Appl. Phys. Lett. 87 132105
[5] ［6］Koster L J A，Mihailetchi V D，Xie H，Blom P W M 2005 Appl. Phys. Lett. 87 203502
[6] ［7］Xing H W，Peng Y Q，Yang Q S，Ma C Z，Wang R S，Li X S 2008 Acta Phys. Sin. 57 7374 （in Chinese）［邢宏伟、彭应全、杨青森、马朝柱、汪润生、李训栓 2008 57 7374］
[7] ［8］Koster L J A，Mihailetchi V D，Blom P W M 2006 Appl. Phys. Lett. 88 093511
[8] ［9］Lenes M，Koster L J A，Mihailetchi V D，Blom P W M 2006 Appl.Phys. Lett. 88 243502［10］You H L，Zhang C F 2009 Chin. Phys. B 18 2096
[9] ］Granstrom M，Petritsch K，Arias A C，Lux A，Andersson M R，Friend R H 1998 Nature 395 257
[10] ］Mihailetchi V D，Blom P W M，Hummelen J C 2003 J Appl. Phys. 94 1015
[11] ］Liu J，Shi Y，Yang Y 2001 Adv. Funct. Mater. 11 420
[12] ］Brabec C J，Cravino A，Meissner D，Serdar Sariciftci N，Thomas Fromherz，Minze T Rispens，Sanchez Luis，Hummelen Jan C 2001 Adv. Funct. Mater. 11 374
[13] ］Koster L J A，Smits E C P，Mihailetchi V D，Blom P W M 2005 Phys. Rev. B 72 085205
[14] ］GUO Zijie，XING Hongwei，WANG Yuhang，Ma Yuejie，Liu Dequan，Ma Chaozhu，Peng Yingquan，Li Junwang 2008 Optoelectron. Lett. 4 0410
[15] ］Langevin 1903 Ann Chim Phys. 28 433
[16] ］Scott J C，Ramos S，Malliaras G G 1999 Sci. Technol. 43 234
[17] ］Malliaras G G 1998 J. Appl. Phys. 84 1583
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