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Wang Shun-Li, Wang Ya-Chao, Guo Dao-You, Li Chao-Rong, Liu Ai-Ping. NiO/GaN p-n junction ultraviolet photodetector and self-powered technology. Acta Physica Sinica,
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Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica,
2020, 69(4): 047201.
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Li Jiang-Jiang, Gao Zhi-Yuan, Xue Xiao-Wei, Li Hui-Min, Deng Jun, Cui Bi-Feng, Zou De-Shu. On-chip fabrication of lateral growth ZnO nanowire array UV sensor. Acta Physica Sinica,
2016, 65(11): 118104.
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Liao Kai-Sheng, Li Zhi-Feng, Li Liang, Wang Chao, Zhou Xiao-Hao, Dai Ning, Li Ning. Interfacial barrier effects in blocked impurity band infrared detectors. Acta Physica Sinica,
2015, 64(22): 227302.
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Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica,
2014, 63(21): 217806.
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Liu Hong-Mei, Yang Chun-Hua, Liu Xin, Zhang Jian-Qi, Shi Yun-Long. Noise characterization of quantum dot infrared photodetectors. Acta Physica Sinica,
2013, 62(21): 218501.
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Li Qian-Qian, Hao Qiu-Yan, Li Ying, Liu Guo-Dong. Theory study of rare earth (Ce, Pr) doped GaN in electronic structrue and optical property. Acta Physica Sinica,
2013, 62(1): 017103.
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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica,
2010, 59(12): 8903-8909.
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Zhou Mei, Zhao De-Gang. A new p-n structure ultraviolet photodetector with p－-GaN active region. Acta Physica Sinica,
2009, 58(10): 7255-7260.
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Zhang Shuang, Zhao De-Gang, Liu Zong-Shun, Zhu Jian-Jun, Zhang Shu-Ming, Wang Yu-Tian, Duan Li-Hong, Liu Wen-Bao, Jiang De-Sheng, Yang Hui. Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector. Acta Physica Sinica,
2009, 58(11): 7952-7957.
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Zhou Mei, Zhao De-Gang. Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica,
2008, 57(7): 4570-4574.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
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Xiong Da-Yuan, Li Ning, Xu Wen-Lan, Zhen Hong-Lou, Li Zhi-Feng, Lu Wei. Study of the dark current in very long wavelength quantum well infrared photodetectors. Acta Physica Sinica,
2007, 56(9): 5424-5428.
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Guo Liang-Liang, Feng Qian, Ma Xiang-Bai, Hao Yue, Liu Jie. Relation between breakdown voltage and current collapse in GaN FP-HEMTs. Acta Physica Sinica,
2007, 56(5): 2900-2904.
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Zhou Mei, Zuo Shu-Hua, Zhao De-Gang. A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica,
2007, 56(9): 5513-5517.
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Sun Xiao-Wei, Chu Yan-Dong, Liu Zi-Jiang, Liu Yu-Xiao, Wang Cheng-Wei, Liu Wei-Min. Molecular dynamics study on the structural and thermodynamic properties of the zinc-blende phase of GaN at high pressures and high temperatures. Acta Physica Sinica,
2005, 54(12): 5830-5836.
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Hao Jing-An, Zheng Hao-Ping. Theoretical calculation of structures and properties of Ga6N6 cluster. Acta Physica Sinica,
2004, 53(4): 1044-1049.
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Xie Chang-Kun, Xu Fa-Qiang, Deng Rui, Xu Peng-Shou, Liu Feng-Qin, K.Yibulaxin. . Acta Physica Sinica,
2002, 51(11): 2606-2611.
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ZHANG DE-HENG, LIU YUN-YAN, ZHANG DE-JUN. THE UV PHOTOCONDUCTIVITY OF n-TYPE GaN FILMSDEPOSITED BY MOCVD. Acta Physica Sinica,
2001, 50(9): 1800-1804.
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