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According to a tight-binding model and the Green's function formalism, we investigate the electronic transport in hybrid contact of doubly stacked zigzag graphene nanoribbons. Our study shows that the next nearest neighbor interlayer coupling, the hybrid contact length and gate voltage each have a significant modulation effect on the electron transmission spectrum. Due to the next nearest neighbor interlayer coupling, the transmission spectrum of the hybrid contact exhibits an electron-hole asymmetry, which is consistent with the experimental result. There exist some transmission gap (T=0) and quantum step (T=1) within the first subband below the Fermi energy, meaning that electrons can reflect and/or transmit completely. It is also observed that the transmission coefficient oscillates within 1 as the contact length increases, showing a quantum interference effect. Under a gate voltage in the bilayer regime, the transmission coefficient can be changed from 1 to 0, showing that a switching effect exists here. The results is useful for the design and the application of the graphene-based device.
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Keywords:
- graphene nanoribbons /
- hybrid contact /
- gate voltage /
- electronic transport
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[65] [66] [67] Buia C, Buldum A, Lu J P 2003 Phys. Rev. B 67 113409
[68] [69] Liu Q, Luo G, Qin R, Li H, Yan X, Xu C, Lai L, Zhou J, Hou S, Wang E 2011 Phys. Rev. B 83 155442
[70] [71] Liu Q, Yu L, Li H, Qin R, Jing Z, Zheng J, Gao Z, Lu J 2011 J. Phys. Chem. C 115 6933
[72] [73] Liao L, Bai J, Cheng R, Lin Y C, Jiang S, Qu Y, Huang Y, Duan X 2010 Nano Lett. 10 3952
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[1] Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V, Firsov A A 2004 Science 306 666
[2] [3] Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[4] Chen J H, Jang C, Xiao S, Ishigami M, Fuhrer M S 2008 Nat. Nano 3 206
[5] [6] Moser J, Barreiro A, Bachtold A 2007 Appl. Phys. Lett. 91 163513
[7] [8] Balandin A A, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau C N 2008 Nano Lett. 8 902
[9] [10] [11] Kim K S, Zhao Y, Jang H, Lee S Y, Kim J M, Kim K S, Ahn J-H, Kim P, Choi J-Y, Hong B H 2009 Nature 457 706
[12] [13] Murali R, Brenner K, Yang Y, Beck T, Meindl J 2009 IEEE Electron Dev. Lett. 30 611
[14] Oostinga J B, Heersche H B, Liu X, Morpurgo A F, Vandersypen L M K 2008 Nat. Mater. 7 151
[15] [16] Schwierz F 2010 Nat. Nano 5 487
[17] [18] Lin Y M, Avouris P 2008 Nano Lett. 8 2119
[19] [20] [21] Xu H, Heinzel T, Zozoulenko I V 2009 Phys. Rev. B 80 045308
[22] [23] Areshkin D A, White C T 2007 Nano Lett. 7 3253
[24] [25] Rotenberg E, Bostwick A, Ohta T, McChesney J L, Seyller T, Horn K 2008 Nat. Mater. 7 258
[26] [27] Puls C P, Staley N E, Liu Y 2009 Phys. Rev. B 79 235415
[28] Nilsson J, Castro Neto A H, Guinea F, Peres N M R 2007 Phys. Rev. B 76 165416
[29] [30] Nakanishi T, Koshino M, Ando T 2010 Phys. Rev. B 82 125428
[31] [32] [33] Koshino M, Nakanishi T, Ando T 2010 Phys. Rev. B 82 205436
[34] Gonzlez J W, Santos H, Pacheco M, Chico L, Brey L 2010 Phys. Rev. B 81 195406
[35] [36] Mucha-Kruczyński M, McCann E, Falko V I 2010 Semicond. Sci. Technol. 25 033001
[37] [38] Castro E, Novoselov K, Morozov S, Peres N, Santos J, Nilsson J, Guinea F, Geim A, Neto A 2010 J. Phys. Condens. Matter 22 175503
[39] [40] [41] Li Z Q, Henriksen E A, Jiang Z, Hao Z, Martin M C, Kim P, Stormer H L, Basov D N 2009 Phys. Rev. Lett. 102 037403
[42] [43] Wright A, Liu F, Zhang C 2009 Nanotechnology 20 405203
[44] Cortijo A, Oroszlny L, Schomerus H 2010 Phys. Rev. B 81 235422
[45] [46] [47] Rhim J-W, Moon K 2008 J. Phys. Condens. Matter 20 365202
[48] [49] Wang X M, Liu H 2011 Acta Phys. Sin. 60 047102 (in Chinese) [王雪梅, 刘红 2011 60 047102]
[50] [51] Kuzmenko A B, Crassee I, van der Marel D, Blake P, Novoselov K S 2009 Phys. Rev. B 80 165406
[52] Ohta T, Bostwick A, Seyller T, Horn K, Rotenberg E 2006 Science 313 951
[53] [54] [55] Xu H, Heinzel T, Evaldsson M, Zozoulenko I V 2008 Phys. Rev. B 77 245401
[56] Xu N, Ding J W, Xing D Y 2008 J. Appl. Phys. 103 083710
[57] [58] Bttiker M, Imry Y, Landauer R, Pinhas S 1985 Phys. Rev. B 31 6207
[59] [60] Jin Z F, Tong G P, Jiang Y J 2009 Acta Phys. Sin. 58 8537 (in Chinese) [金子飞, 童国平, 蒋永进 2009 58 8537]
[61] [62] Hu H X, Zhang Z H, Liu X H, Qiu M, Ding K H 2009 Acta Phys. Sin. 58 7156 (in Chinese) [胡海鑫, 张振华, 刘新海, 邱明, 丁开和 2009 58 7156]
[63] [64] Kuzmenko A B, van Heumen E, van der Marel D, Lerch P, Blake P, Novoselov K S, Geim A K 2009 Phys. Rev. B 79 115441
[65] [66] [67] Buia C, Buldum A, Lu J P 2003 Phys. Rev. B 67 113409
[68] [69] Liu Q, Luo G, Qin R, Li H, Yan X, Xu C, Lai L, Zhou J, Hou S, Wang E 2011 Phys. Rev. B 83 155442
[70] [71] Liu Q, Yu L, Li H, Qin R, Jing Z, Zheng J, Gao Z, Lu J 2011 J. Phys. Chem. C 115 6933
[72] [73] Liao L, Bai J, Cheng R, Lin Y C, Jiang S, Qu Y, Huang Y, Duan X 2010 Nano Lett. 10 3952
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