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Du Li-Jie, Chen Jing-Wen, Wang Rong-Ming. Self-driven near infrared photoelectric detector based on C14H31O3P-Ti3C2/Au Schottky junction. Acta Physica Sinica,
2023, 72(13): 138502.
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Yan Da-Wei, Wu Jing, Yan Xiao-Hong, Li Wei-Ran, Yu Dao-Xin, Cao Yan-Rong, Gu Xiao-Feng. Voltage and temperature dependence of reverse leakage current of lattice-matched InAlN/GaN heterostructure Schottky contact. Acta Physica Sinica,
2021, 70(7): 077201.
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Zhang Fang, Jia Li-Qun, Sun Xian-Ting, Dai Xian-Qi, Huang Qi-Xiang, Li Wei. Tuning Schottky barrier in graphene/InSe van der Waals heterostructures by electric field. Acta Physica Sinica,
2020, 69(15): 157302.
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Chen Qian, Li Qun, Yang Ying. Effects of AlGaN interlayer on scattering mechanisms in InAlN/AlGaN/GaN heterostructures. Acta Physica Sinica,
2019, 68(1): 017301.
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Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue. Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica,
2016, 65(3): 038501.
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Bai Jun-Xue, Guo Wei-Ling, Sun Jie, Fan Xing, Han Yu, Sun Xiao, Xu Ru, Lei Jun. Research on the relationship between ideality factor and number of units of GaN-based high voltage light-emitting diode. Acta Physica Sinica,
2015, 64(1): 017303.
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Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
doi: 10.7498/aps.63.080202
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Zhang Xiao-Fu, Li Yu-Dong, Guo Qi, Luo Mu-Chang, He Cheng-Fa, Yu Xin, Shen Zhi-Hui, Zhang Xing-Yao, Deng Wei, Wu Zheng-Xin. 60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum. Acta Physica Sinica,
2013, 62(7): 076106.
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Liu Jian-Peng, Zhu Yan-Xu, Guo Wei-Ling, Yan Wei-Wei, Wu Guo-Qing. The effect of ITO annealing on electrical characteristic of GaN based LED. Acta Physica Sinica,
2012, 61(13): 137303.
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Liu Hong-Xia, Gao Bo, Zhuo Qing-Qing, Wang Yong-Huai. Influence of polarization effects on photoelectric response of AlGaN/GaN heterojunction p-i-n photodetectors. Acta Physica Sinica,
2012, 61(5): 057802.
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Zhang Shan, Hu Xiao-Ning. Deep levels of HgCdTe diodes on Si substrates. Acta Physica Sinica,
2011, 60(6): 068502.
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Zhang Jin-Cheng, Zheng Peng-Tian, Dong Zuo-Dian, Duan Huan-Tao, Ni Jin-Yu, Zhang Jin-Feng, Hao Yue. The effect of back-barrier layer on the carrier distribution in the AlGaN/GaN double-heterostructure. Acta Physica Sinica,
2009, 58(5): 3409-3415.
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Zhang Jin-Cheng, Dong Zuo-Dian, Qin Xue-Xue, Zheng Peng-Tian, Liu Lin-Jie, Hao Yue. Analysis of the leakage current in GaN-based heterostructure buffer layer. Acta Physica Sinica,
2009, 58(3): 1959-1965.
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Ni Jin-Yu, Hao Yue, Zhang Jin-Cheng, Duan Huan-Tao, Zhang Jin-Feng. Influence of high-temperature AlN interlayer on the electrical properties of AlGaN/GaN heterostructure and HEMTs. Acta Physica Sinica,
2009, 58(7): 4925-4930.
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Ni Jin-Yu, Zhang Jin-Cheng, Hao Yue, Yang Yan, Chen Hai-Feng, Gao Zhi-Yuan. Comparison of measuring methods of sheet carrier density in AlGaN/GaN heterostructures. Acta Physica Sinica,
2007, 56(11): 6629-6633.
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Wang Chong, Feng Qian, Hao Yue, Wan Hui. Effect of pre-metallization processing and annealing on Ni/Au Schottky contacts in AlGaN/GaN heterostructures. Acta Physica Sinica,
2006, 55(11): 6085-6089.
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Yao Wei, Qiu Zhi-Jun, Gui Yong-Sheng, Zheng Ze-Wei, Lü Jie, Tang Ning, Shen Bo, Chu Jun-Hao. Beating patterns in the oscillatory magnetoresistance of a Si modulation-doped AlGaN/GaN heterostructure. Acta Physica Sinica,
2005, 54(5): 2247-2251.
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Zheng Ze-Wei, Shen Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Tang Ning, Jiang Chun-Ping, Zhang Rong, Shi Yi, Zheng You-Dou, Guo Shao-Lin, Chu Jun-Hao. Study on the subband properties of AlxGa1-x N/GaN modulation-doped heterostructures. Acta Physica Sinica,
2004, 53(2): 596-600.
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Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju. AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica,
2003, 52(12): 2985-2988.
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ZHOU YU-GANG, SHEN BO, LIU JIE, ZHOU HUI-MEI, YU HUI-QIANG, ZHANG RONG, SHI YI, ZHENG YOU-DOU. EXTRACTION OF POLARIZATION-INDUCED CHARGE DENSITY INMODULATION-DOPED AlxGa1-xN/GaN HETEROSTRUCTURETHROUGH THE SIMULATION OF THE SCHOTTKY CAPACITANCE-VOLTAGE CHARACTERISTICS. Acta Physica Sinica,
2001, 50(9): 1774-1778.
doi: 10.7498/aps.50.1774
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