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Based on metal-oxide-semiconductor field effect transistor (MOSFET) microscopic mechanism of radiation damage, a relation between radiation induced increase in number of oxide hole-traps and post-irradiation threshold voltage drift is proposed. Then, Based on MOSFET microscopic mechanism of1/f noise generation, a quantitative relationship between pre-irradiation1/f noise power spectral amplitude and post-irradiation threshold voltage drift is founded, which accords well with the experimental results. This relationship shows that pre-irradiation1/f noise power spectral amplitude is proportional to post-irradiation threshold voltage drift, which can reflect the degradation of latent defect in MOSFET. So, this modal is helpful to characterize the quantity and severity of latent defect in MOSFET by using1/f noise parameters.
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Keywords:
- 1/f noise /
- latent defect /
- interface trap /
- oxide trap
[1] Ma T P, Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Device and Circuits (New York: A Wiley-Interscience Pub-lication John Wiley Sons)
[2] [3] Fleetwood D M, Meisenheimer T L, Scofield J H 1994 IEEE Trans. Electron. Dev. 41 1953
[4] [5] Scofield J H, Fleetwood D M 1991 IEEE Trans. Nucl. Sci. 38 1567
[6] Fleetwood D M, Scofield J H 1990 Phys. Rev. Lett. 64 579
[7] [8] [9] Jindal R P 2006 IEEE Trans. Electron Dev. 53 2051
[10] [11] Mete E, Tian X, Clark W F 2007 IEEE Electron Dev. Lett. 28 812
[12] [13] Shaposhnikov A V, Gritsenko V A, Zhidomirov G M, Roger M 2002 Phys. Sol. State 44 1028
[14] [15] Fleetwood D M, Winokur P S, Reber R A, Meisenheimer T L, Schwank J R, Shaneyfelt M R, Riewe L C 1993 Appl. Phys. Lett. 73 5058
[16] [17] Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 56 3400]
[18] [19] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2004 IEEE Trans. Nucl. Sci. 51 3158
[20] [21] Zhung Y Q and Sun Q 1993 Noise and its Minimizing Technol-ogy in Semiconductor Devices (Beijing:National Defence Indus-try Press) pp172221 (in Chinese) [庄奕琪, 孙青 1993 半导体器件中的噪声及其低噪声化技术(北京:国防工业出版社)第l72---221页]
[22] [23] Bao J L, Zhuang Y Q, Du L 2005 Acta Phys. Sin. 54 2118 (in Chinese) [包军林, 庄奕琪, 杜磊 2005 54 2118]
[24] [25] Zhuang Y Q and Sun Q 1991 IEEE Trans. on Electron Dev. 38 2540
[26] Hung K K, Ping K K, Hu C 1990 IEEE Trans. Electron. Dev. 37 654
[27] [28] Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[29] [30] [31] Scofield J H, Doerr T P, Fleetwood D M 1989 IEEE Trans. Nucl. Sci. 36 1946
[32] [33] Zhang T Q, Liu C Y, Liu J L 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐 2001 50 2434]
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[1] Ma T P, Dressendorfer P V 1989 Ionizing Radiation Effects in MOS Device and Circuits (New York: A Wiley-Interscience Pub-lication John Wiley Sons)
[2] [3] Fleetwood D M, Meisenheimer T L, Scofield J H 1994 IEEE Trans. Electron. Dev. 41 1953
[4] [5] Scofield J H, Fleetwood D M 1991 IEEE Trans. Nucl. Sci. 38 1567
[6] Fleetwood D M, Scofield J H 1990 Phys. Rev. Lett. 64 579
[7] [8] [9] Jindal R P 2006 IEEE Trans. Electron Dev. 53 2051
[10] [11] Mete E, Tian X, Clark W F 2007 IEEE Electron Dev. Lett. 28 812
[12] [13] Shaposhnikov A V, Gritsenko V A, Zhidomirov G M, Roger M 2002 Phys. Sol. State 44 1028
[14] [15] Fleetwood D M, Winokur P S, Reber R A, Meisenheimer T L, Schwank J R, Shaneyfelt M R, Riewe L C 1993 Appl. Phys. Lett. 73 5058
[16] [17] Li R M, Du L, Zhuang Y Q, Bao J L 2007 Acta Phys. Sin. 56 3400 (in Chinese) [李瑞珉, 杜磊, 庄奕琪, 包军林 2007 56 3400]
[18] [19] Rashkeev S N, Fleetwood D M, Schrimpf R D, Pantelides S T 2004 IEEE Trans. Nucl. Sci. 51 3158
[20] [21] Zhung Y Q and Sun Q 1993 Noise and its Minimizing Technol-ogy in Semiconductor Devices (Beijing:National Defence Indus-try Press) pp172221 (in Chinese) [庄奕琪, 孙青 1993 半导体器件中的噪声及其低噪声化技术(北京:国防工业出版社)第l72---221页]
[22] [23] Bao J L, Zhuang Y Q, Du L 2005 Acta Phys. Sin. 54 2118 (in Chinese) [包军林, 庄奕琪, 杜磊 2005 54 2118]
[24] [25] Zhuang Y Q and Sun Q 1991 IEEE Trans. on Electron Dev. 38 2540
[26] Hung K K, Ping K K, Hu C 1990 IEEE Trans. Electron. Dev. 37 654
[27] [28] Oldham T R, McLean F B 2003 IEEE Trans. Nucl. Sci. 50 483
[29] [30] [31] Scofield J H, Doerr T P, Fleetwood D M 1989 IEEE Trans. Nucl. Sci. 36 1946
[32] [33] Zhang T Q, Liu C Y, Liu J L 2001 Acta Phys. Sin. 50 2434 (in Chinese) [张廷庆, 刘传洋, 刘家璐 2001 50 2434]
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