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The operational mechanism of normally-off type bipolar-mode SiC junction field effect transistor (BJFET) is studied by using a two-dimensional numerical model. Compared with the unipolar-mode SiC JFET, the bipolar-mode can reduce the on-state resistor of the SiC JFET effectively and compromise between the on-state and off-state characteristic of the device. The simulation resluts also show that switching time of BJFET increases remarkably.
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Keywords:
- silicon carbon /
- bipolar mode /
- JFET /
- model
[1] Zhang Y M 1998 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [张玉明 1998 博士学位论文 (西安: 西安电子科技大学)]
[2] [3] Matsunami H 2006 Microelectron Engineering 83 2
[4] [5] Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 0566 (in Chinese)[杨银堂、 耿振海、 段宁兴、 贾护军、 余 涔、 任丽丽 2010 59 0566]
[6] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Acta Phys. Sin. 58 288 (in Chinese) [张 林、 张义门、 张玉明、 韩 超、 马永吉 2009 58 288]
[7] [8] Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Masanobu Kasuga 2006 IEEE Electron Device Letters 27 908
[9] [10] Li Yuzhu, Alexandrov Petre, Zhao Jian H 2008 IEEE Transactions on Electron Devices, 55 1880
[11] [12] [13] Veliadis V, Snook M, McNutt T, Hearne H, Potyraj P, Lelis Aivars, Scozzie C 2008 IEEE Electron Device Letters 29 1325
[14] Veliadis V, McNutt T, Snook M, Hearne H, Potyraj P, Scozzie C 2008 IEEE Electron Device Letters 29 1132
[15] [16] [17] [18] Li S Y 2001 Static Induction Transistor: Physics, Process and Experiment Gansu (Lanzhou: Lanzhou University Press) p28 (in Chinese) [李思渊 2001 静电感应器件: 物理、 工艺与实践 (兰州: 兰州大学出版社) 第28页]
[19] [20] Yin C Q, Zhao H Q 1994 Power Electronics 1 50 (in Chinese) [尹成群、 赵焕庆 1994 电力电子技术 1 50]
[21] [22] Henning J P, Przadka A, Melloch M R, Cooper J A 2000 IEEE Electron Device Letters 21 578
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[1] Zhang Y M 1998 Ph. D. Dissertation (Xi'an: Xidian University) (in Chinese) [张玉明 1998 博士学位论文 (西安: 西安电子科技大学)]
[2] [3] Matsunami H 2006 Microelectron Engineering 83 2
[4] [5] Yang Y T, Geng Z H, Duan B X, Jia H J, Yu C, Ren L L 2010 Acta Phys. Sin. 59 0566 (in Chinese)[杨银堂、 耿振海、 段宁兴、 贾护军、 余 涔、 任丽丽 2010 59 0566]
[6] Zhang L, Zhang Y M, Zhang Y M, Han C, Ma Y J 2009 Acta Phys. Sin. 58 288 (in Chinese) [张 林、 张义门、 张玉明、 韩 超、 马永吉 2009 58 288]
[7] [8] Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Masanobu Kasuga 2006 IEEE Electron Device Letters 27 908
[9] [10] Li Yuzhu, Alexandrov Petre, Zhao Jian H 2008 IEEE Transactions on Electron Devices, 55 1880
[11] [12] [13] Veliadis V, Snook M, McNutt T, Hearne H, Potyraj P, Lelis Aivars, Scozzie C 2008 IEEE Electron Device Letters 29 1325
[14] Veliadis V, McNutt T, Snook M, Hearne H, Potyraj P, Scozzie C 2008 IEEE Electron Device Letters 29 1132
[15] [16] [17] [18] Li S Y 2001 Static Induction Transistor: Physics, Process and Experiment Gansu (Lanzhou: Lanzhou University Press) p28 (in Chinese) [李思渊 2001 静电感应器件: 物理、 工艺与实践 (兰州: 兰州大学出版社) 第28页]
[19] [20] Yin C Q, Zhao H Q 1994 Power Electronics 1 50 (in Chinese) [尹成群、 赵焕庆 1994 电力电子技术 1 50]
[21] [22] Henning J P, Przadka A, Melloch M R, Cooper J A 2000 IEEE Electron Device Letters 21 578
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