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The Si-doped glow discharge polymer (Si-GDP) films are deposited by glow discharge polymerization technology at different pressures. The structure and the composition of eath Si-doped glow discharge polymer film are characterized by the Fourier transform infrared spectroscopy and x-ray photoelectron. Using ultraviolet/visible spectroscopy, the optical band gap is analyzed. The results show that the Si element exists mainly in the form of Si—C, Si—H, Si—O, Si—CH3. The relative content of Si—C decreases and then increases with the increase of pressure. It can be found that the ratio between C—C and C C decreases with the increase of pressure. As the pressure increases, the optical band-gap decreases and then increases.
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Keywords:
- Si-doped glow discharge polymer films /
- pressure /
- Fourier transform infrared spectroscopy spectrum /
- x-ray photoelectron spectrum
[1] Nikroo A,Pontelandolfo J M,Castillo E R 2002 General Atomics Report GA-A23757
[2] Mokuno Y,Chayahara A,Horino Y,Nishimura Y 2002 Surf. Coat. Technol. 156 328
[3] Roy M,Mali K,Joshi N,Misra D S,Kulshreshtha S K 2007 Diam. Relat. Mater. 16 517
[4] Nikroo A,Steinman D A 1999 Fusion Technol. 35 212
[5] Hoppe M L 2000 Fusion Technol. 38 42
[6] Hoppe M L 2000 General Atomics Report GA-A23356
[7] Demichelis F,Pirri C F,Tresso E,Stapinski T 1992 J. Appl. Phys. 71 5641
[8] Liu B,Tang W J,Song Z X,Chen Y S,Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 58 2042]
[9] Ristein J, Stief R T, Ley L 1998 J. Appl. Phys. 84 3836
[10] Bounouh Y,Thèye M L,Dehbi-Alaoui A,Matthews A,Stoquert J P 1995 Phys. Rev. B 51 9597
[11] Zhang B L,He Z B,Wu W D,Liu X H,Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 58 6436]
[12] Zhan B H,Son C L,Liu Y,Zhu J Q,Han G R 2005 J. Mater. Sci. Eng. 23 843 (in Chinese)[詹宝华、宋晨路、刘 涌、朱建强、韩高荣 2005 材料科学与工程学报 23 843]
[13] Wu W J,Mon M H 1999 Surf. Coat. Technol. 111 134
[14] Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221
[15] Nikroo A,Czechowicz D G,Castillo E R,Pontelandolfo J M 2002 General Atomics Report GA-A23758
[16] Tauc J,Grigorovici R,Vancu A 1966 Phys. Stat. Sol. 15 627
[17] Xiao J R,Xu H,Guo A M,Wang H Y 2007 Acta Phys. Sin. 56 1809 (in Chinese) [肖剑荣、徐 惠、郭爱敏、王焕友 2007 56 1809]
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[1] Nikroo A,Pontelandolfo J M,Castillo E R 2002 General Atomics Report GA-A23757
[2] Mokuno Y,Chayahara A,Horino Y,Nishimura Y 2002 Surf. Coat. Technol. 156 328
[3] Roy M,Mali K,Joshi N,Misra D S,Kulshreshtha S K 2007 Diam. Relat. Mater. 16 517
[4] Nikroo A,Steinman D A 1999 Fusion Technol. 35 212
[5] Hoppe M L 2000 Fusion Technol. 38 42
[6] Hoppe M L 2000 General Atomics Report GA-A23356
[7] Demichelis F,Pirri C F,Tresso E,Stapinski T 1992 J. Appl. Phys. 71 5641
[8] Liu B,Tang W J,Song Z X,Chen Y S,Xu K W 2009 Acta Phys. Sin. 58 2042 (in Chinese) [刘 波、唐文进、宋忠孝、陈亚芍、徐可为 2009 58 2042]
[9] Ristein J, Stief R T, Ley L 1998 J. Appl. Phys. 84 3836
[10] Bounouh Y,Thèye M L,Dehbi-Alaoui A,Matthews A,Stoquert J P 1995 Phys. Rev. B 51 9597
[11] Zhang B L,He Z B,Wu W D,Liu X H,Yang X D 2009 Acta Phys. Sin. 58 6436 (in Chinese) [张宝玲、何智兵、吴卫东、刘兴华、杨向东 2009 58 6436]
[12] Zhan B H,Son C L,Liu Y,Zhu J Q,Han G R 2005 J. Mater. Sci. Eng. 23 843 (in Chinese)[詹宝华、宋晨路、刘 涌、朱建强、韩高荣 2005 材料科学与工程学报 23 843]
[13] Wu W J,Mon M H 1999 Surf. Coat. Technol. 111 134
[14] Moulder J F,Stickle W F,Sobol P E,Bomben K D 1992 Handbook of X-Ray Photoelectron Spectroscopy (Eden Prairle: Perkin-Elmer) p221
[15] Nikroo A,Czechowicz D G,Castillo E R,Pontelandolfo J M 2002 General Atomics Report GA-A23758
[16] Tauc J,Grigorovici R,Vancu A 1966 Phys. Stat. Sol. 15 627
[17] Xiao J R,Xu H,Guo A M,Wang H Y 2007 Acta Phys. Sin. 56 1809 (in Chinese) [肖剑荣、徐 惠、郭爱敏、王焕友 2007 56 1809]
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