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The characteristics of terahertz (THz) radiations from the surfaces of two kinds of narrow-band semiconductors InN and InAs excited by femtosecond laser pulses with different pump powers (from 10 to 320mW) are investigated experimentally. The results show that InAs can irradiate a stronger THz signal than that of InN under the same pump power so its radiation efficiency is higher. However, the spectral widths of THz radiations from these semiconductor surfaces increase with the increase of pump power. When the intensity of pump laser is high enough, the spectral Half-Maximum-Full-Width (HMFW) of THz radiation tends to be a constant. Compared with InAs, InN can reach this constant HMFW THz spectrum at a lower pump power. This research is significant for investigating the THz radiation mechanism from semiconductor surfaces, and it is also a good reference for exploring a THz radiation source with low cost and high efficiency.
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Keywords:
- InN /
- InAs /
- THz radiation /
- pump intensity
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[19] Wang X Q, Zhao G Z, Zhang Q 2010 Appl. Phys. Lett. 96 061907
[20] Liu D F, Xu D 2006 International Journal of Infrared and Millimeter Waves 27 9
[21] Zhang X C, Hu B B, Darrow D, Auston D H 1990 Appl. Phys. Lett. 56 1011
[22] Ji Z G 2005 Semiconductor Physics (Hangzhou: Zhejiang University Press) p129 (in Chinese) [季振国 2005 半导体物理(杭州:浙江大学出版社)第129页]
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[1] Cao J C, Han Y J, Li H 2010 Acta Phys. Sin. 59 2169 (in Chinese). [曹俊诚、韩英军、李 华 2010 59 2169]
[2] Li E B, Liu J S, Sun B, Yao J Q 2009 Chin. Phys. B 18 2846
[3] Zhang C L, Zhang Y, Zhao G Z 2008 Terahertz Sensing and Imaging. (Beijing: National Defence Industry Press) p3 (in Chinese). [张存林、张 岩、赵国忠 2008 太赫兹感测与成像(北京:国防工业出版社)第3页]
[4] Yue W W, Wang W N, Zhao G Z 2005 Acta Phys. Sin. 54 3094 (in Chinese)[岳伟伟、王卫宁、赵国忠 2005 54 3094]
[5] Dragoman D, Dragoman M 2004 Progress in Quantum Electronics 28 1
[6] Jia W L, Shi W, Qu G H, Sun X F 2008 Acta Phys. Sin. 57 5425 (in Chinese) [贾婉丽、施 卫、屈光辉、孙小芳 2008 57 5425]
[7] Ingrid Wilke, 2007 Proc. of SPIE, 67720N-1
[8] Zhao G Z, Zhang Z W, Cui W L 2005 Chinese Journal of Semiconductors, 26 z1(in Chinese)[赵国忠、张振伟、崔伟利 2005 中国半导体学报26 z1]
[9] Cimalla V, Pradarutti B 2007 Phys. Stat. Sol. (b) 244 1829
[10] Matthaus G, Cimalla V 2008 Optics Communications 281 3776
[11] Ahh H, Ku Y P, Wang Y C 2007 Appl. Phys. Lett. 91 132108
[12] Chern G D, Readinger E E, Shen H 2006 Appl. Phys. Lett. 89 141115
[13] Liu K, Xu J, Yuan T,Zhang X C 2006 Phys. Rev. B 73 155330
[14] Ahn H, Ku Y P, Chuang C H, Pan C L 2008 Appl. Phys. Lett. 92 102103
[15] Polyakov V M, Schwierz F 2007 Semiconductor science and technology 22 1016
[16] Sun H Q, Zhao G Z, Zhang C L, Yang G Z 2008 Acta Phys. Sin. 57 790(in Chinese) [孙红起、赵国忠、张存林、杨国桢 2008 57 790]
[17] Chen H,Wang L 2009 Acta Phys. Sin. 58 4605 (in Chinese). [陈 华、汪 力 2009 58 4605]
[18] Wang X Q, Che S, Ishitani Y, Yoshikawa A 2007 Appl. Phys. Lett. 91 242111
[19] Wang X Q, Zhao G Z, Zhang Q 2010 Appl. Phys. Lett. 96 061907
[20] Liu D F, Xu D 2006 International Journal of Infrared and Millimeter Waves 27 9
[21] Zhang X C, Hu B B, Darrow D, Auston D H 1990 Appl. Phys. Lett. 56 1011
[22] Ji Z G 2005 Semiconductor Physics (Hangzhou: Zhejiang University Press) p129 (in Chinese) [季振国 2005 半导体物理(杭州:浙江大学出版社)第129页]
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