Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer

Zhang Yun-Yan; Fan Guang-Han; Zhang Yong; Zheng Shu-Wen

doi:10.7498/aps.60.028503

Abstract

A two-dimensional simulation of electrical and optical characteristics of dual-wavelength LED (light-emitting diode) with doped GaN interval layer is conducted with software.It shows that by the use of doped GaN interval layer, we can solve the luminescence intensity disparity of the two kinds of quantum wells in dual-wavelength LED. And through control of the thickness of the interval layer, we can adjust the relative luminescence intensity of the two kinds of quantum wells. Therefore, the effect of spectrum-control in dual-wavelength LED is due to the blocking effect of holes or electrons by doped GaN interval layer.

Keywords:

Authors and contacts

1.
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

References

[1]	Zheng D S, Qian K Y, Luo Y 2005 Semicond. Optoelectro. 26 87
[2]	Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semicond. Optoelectron. 28 349
[3]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[4]	Qi Y D, Liang H,Tang W, Lu Z D, Lau K M 2004 J. Cryst. Growth 272 333
[5]	Damilano B,Grandjean N,Pernot C,Massies J 2001 J. Appl. Phys. 40 918
[6]	Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[7]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8]	Chen H S, Yeh D M, Lu C F 2006 IEEE Photon.Technol.Lett. 18 1430
[9]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[10]	Chuang S L, Chang C S 1997 Semicond. Sci. Technol. 12 252
[11]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[12]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[13]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[14]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204

Cited By

[1]	Zheng D S, Qian K Y, Luo Y 2005 Semicond. Optoelectro. 26 87
[2]	Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semicond. Optoelectron. 28 349
[3]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[4]	Qi Y D, Liang H,Tang W, Lu Z D, Lau K M 2004 J. Cryst. Growth 272 333
[5]	Damilano B,Grandjean N,Pernot C,Massies J 2001 J. Appl. Phys. 40 918
[6]	Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[7]	Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8]	Chen H S, Yeh D M, Lu C F 2006 IEEE Photon.Technol.Lett. 18 1430
[9]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[10]	Chuang S L, Chang C S 1997 Semicond. Sci. Technol. 12 252
[11]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[12]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[13]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[14]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204

[1]	Fang Yu, Wu Xing-Zhi, Chen Yong-Qiang, Yang Jun-Yi, Song Ying-Lin. Study on two-photon induced ultrafast carrier dynamcis in Ge-doped GaN by transient absorption spectroscopy. Acta Physica Sinica, 2020, 69(16): 168701. doi: 10.7498/aps.69.20200397
[2]	Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan. Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201. doi: 10.7498/aps.69.20190640
[3]	Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei. Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402. doi: 10.7498/aps.65.038402
[4]	Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi. Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806. doi: 10.7498/aps.63.217806
[5]	Zhang Pan-Jun, Sun Hui-Qing, Guo Zhi-You, Wang Du-Yang, Xie Xiao-Yu, Cai Jin-Xin, Zheng Huan, Xie Nan, Yang Bin. The spectrum-control of dual-wavelength LED with quantum dots planted in quantum wells. Acta Physica Sinica, 2013, 62(11): 117304. doi: 10.7498/aps.62.117304
[6]	Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng. Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301. doi: 10.7498/aps.62.217301
[7]	Liu Xiao-Ping, Fan Guang-Han, Zhang Yun-Yan, Zheng Shu-Wen, Gong Chang-Chun, Wang Yong-Li, Zhang Tao. Numerical study of spectrum-control in dual-wavelength LED with doped quantum well barriers of different doping concentration. Acta Physica Sinica, 2012, 61(13): 138503. doi: 10.7498/aps.61.138503
[8]	Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun. Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303. doi: 10.7498/aps.61.227303
[9]	Chen Jun, Fan Guang-Han, Zhang Yun-Yan. Investigation of spectral regulation in dual- wavelength light-emitting diodes by using the selective p-doped barriers. Acta Physica Sinica, 2012, 61(8): 088502. doi: 10.7498/aps.61.088502
[10]	Chen Jun, Fan Guang-Han, Zhang Yun-Yan. The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504. doi: 10.7498/aps.61.178504
[11]	Zhang Yun-Yan, Fan Guan-Han. Theoretical study of the effect of changes in the number of quantum wells of dual-wavelength LED. Acta Physica Sinica, 2011, 60(7): 078504. doi: 10.7498/aps.60.078504
[12]	Zhang Yun-Yan, Fan Guan-Han. Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502. doi: 10.7498/aps.60.018502
[13]	Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica, 2010, 59(12): 8903-8909. doi: 10.7498/aps.59.8903
[14]	Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274. doi: 10.7498/aps.59.1268
[15]	Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao. Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009. doi: 10.7498/aps.59.5002
[16]	Li Wei-Jun, Zhang Bo, Xu Wen-Lan, Lu Wei. Experimental and theoretical study of blue InGaN/GaN multiple quantum well blue light-emitting diodes. Acta Physica Sinica, 2009, 58(5): 3421-3426. doi: 10.7498/aps.58.3421
[17]	Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan. Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica, 2008, 57(5): 3176-3181. doi: 10.7498/aps.57.3176
[18]	Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007. doi: 10.7498/aps.56.6003
[19]	Liu Shi-Feng, Qin Guo-Gang, You Li-Ping, Zhang Ji-Cai, Fu Zhu-Xi, Dai Lun. Synthesis of GaN nanowires and nano-pyramids in a two-hot-boat chemical vapor deposition system via an In-doping technique. Acta Physica Sinica, 2005, 54(9): 4329-4333. doi: 10.7498/aps.54.4329
[20]	Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia. RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562. doi: 10.7498/aps.52.2558

Catalog

Vol. 60, Issue 2 - 2011-01-20

Metrics

Abstract views: 8675
PDF Downloads: 724
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板