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Accelerated aging and life-time tests at ambient temperatures of 40 ℃,70 ℃ and room temperature were carried out on GaN-based white light-emitting diodes (LEDs). The electrical, optical and thermal characteristics of the device were compared before and after different aging times in order to investigate the failure mechanism of the device. Here, we mainly analyzed the failure mechanism related with the chip and the phosphor of the LED. The current-voltage characteristics demonstrated that both the series resistance and the tunnel current increase under lower forward voltages after aging, which were due to the degradation of p-type ohmic contact and the increase of defect density. The thermal characteristics confirmed that the thermal resistance increased rapidly under high aging temperature. This was mainly attributed to the fracture of different materials inside the devices caused by the difference in thermal expansion coefficients. Optical measurements indicated that high aging temperature could accelerate the degradation of output power and reduce the conversion efficiency of the phosphor as well. Finally, the life time of the device was calculated using Arrhenius-equation, and the failure mechanism was analyzed.
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Keywords:
- accelerated aging /
- failure mechanism /
- GaN /
- white light-emitting diode
[1] Khan M A, Shatalov M, Maruska H P, Wang H M, Kuokstis E 2005 Jpn. J. Appl. Phys. 44 7191
[2] Bergh A, Craford G, Duggal A, Haitz R 2001 Phys. Today 5544 42
[3] Narendran N, Deng L, Pysar R M, Gu Y, Yu H 2004 Proceedings of the Third Internaltional Conference on Solid State Lighting 2003 San Diego, United States, August 5, 2003 p267
[4] Trevisanello L, Meneghini M, Mura G, Vanzi M P, Meneghesso G, Zanoni E 2008 IEEE Trans. Dev. Mater. Reliab. 8 304
[5] Uddin A, Wei A C, Andersson T G 2005 Thin Solid Films 483 378
[6] Chen H T, Lü Y J, Chen Z, Zhang H B, Gao Y L, Chen G L 2009 Acta Phys. Sin. 58 5700 (in Chinese) [陈焕庭、吕毅军、 陈 忠、张海兵、高玉琳、陈国龙 2009 58 5700] 〖7] Li B Q, Zheng T C, Xia Z H 2009 Acta Phys. Sin. 58 7189 (in Chinese) [李炳乾、郑同场、夏正浩 2009 58 7189]
[7] Huang S R 2007 Ph.D. Dissertation (Xiamen: Xiamen University) (in Chinese) [黄生荣 2007 (博士学位论文) (厦门:厦门大学)]
[8] Huang S R, Tian H T, Chen C 2007 Chinese Lighting 5 83 (in Chinese) [黄生荣、田洪涛、陈 朝 2007 中国照明 5 83]
[9] Huang S R, Chen C 2007 Acta Phys. Sin. 56 4596 (in Chinese) [黄生荣、陈 朝 2007 56 4596]
[10] Chen C, Tian H T 2006 Chinese Patent CN200310121093.5 (in Chinese) [陈 朝、田洪涛 2006 中国发明专利 CN200310121 093.5]
[11] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese)[薛正群、黄生荣、张保平、陈 朝 2010 59 1268]
[12] Osinski M, Zeller J, Chiu P C, Phillips B S 1996 Appl. Phys. Lett. 69 898
[13] Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
[14] Barton D L, Osinski M, Perlin P, Eliseev P G, Lee J 1999 Microelectron. Reliab. 39 1219
[15] Meneghesso G, Levada S, Zanoni E 2003 Microelectron. Reliab. 43 1737
[16] Li Y X, Min Y L, Zhou X Z, You X Z 2003 Chinese J. Inorg. Chem. 19 1169 (in Chinese) [李永绣、 闵宇霖、周雪珍、游效曾 2003 无机化学学报 19 1169]
[17] Hu J Z, Yang L Q, Kim L, Shin M W 2007 Semicond. Sci. Technol. 22 1249
[18] Yu L S 2006 Semiconductor Heterojunction Physics (Beijing: Science Press) pp78,84 (in Chinese) [虞丽生 2006 半导体异质结物理 (北京:科学出版社) 第78,84页]
[19] Hu J Z, Yang L Q, Shin M W 2008 J. Phys. D: Appl. Phys. 41 1
[20] Shi M 2004 Physics and Technology of Semiconductor Devices (Suzhou: Suzhou University Press) p93 (in Chinese) [施 敏 2004 半导体器件物理 (苏州:苏州大学出版社) 第93页]
[21] Hsu C Y, Lan W H, Wu Y S 2003 Appl. Phys. Lett. 83 2447
[22] Szekely V, Bien T V 1988 Solid-State Electronics 31 1363
[23] Rencz M, Poppe A, Kollar E 2005 IEEE Trans. Compon.Pack T. 28 51
[24] Osinski M, Barton D L, Perlin P, Lee J 1998 J. Cryst. Growth 189/190 808
[25] Fan C X 2006 Adcanced Display 65 11 (in Chinese) [范朝勋 2006 现代显示 65 11]
[26] Fang F B, Wang Y H, Song D H, Xu B H 2008 Chin J. Lumin. 29 353 (in Chinese) [方福波、王垚浩、宋代辉、徐彬海 2008 发光学报 29 353]
[27] Yamakoshi S, Hasegawa O, Hamaguchi H, Abe M, Ymaoka T 1977 Appl. Phys. Lett. 31 627
[28] Zhao M, Zhang W S, Xu L S 2006 Proceeding of the 10th National Seminar LED industry and academic conference Dalian, China, September 25—29, 2006 (in Chinese) [赵 敏、张万生、徐立生 2006 第十届全国LED产业研讨与学术会议论文集 大连,中国,9月25—29日,2006]
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[1] Khan M A, Shatalov M, Maruska H P, Wang H M, Kuokstis E 2005 Jpn. J. Appl. Phys. 44 7191
[2] Bergh A, Craford G, Duggal A, Haitz R 2001 Phys. Today 5544 42
[3] Narendran N, Deng L, Pysar R M, Gu Y, Yu H 2004 Proceedings of the Third Internaltional Conference on Solid State Lighting 2003 San Diego, United States, August 5, 2003 p267
[4] Trevisanello L, Meneghini M, Mura G, Vanzi M P, Meneghesso G, Zanoni E 2008 IEEE Trans. Dev. Mater. Reliab. 8 304
[5] Uddin A, Wei A C, Andersson T G 2005 Thin Solid Films 483 378
[6] Chen H T, Lü Y J, Chen Z, Zhang H B, Gao Y L, Chen G L 2009 Acta Phys. Sin. 58 5700 (in Chinese) [陈焕庭、吕毅军、 陈 忠、张海兵、高玉琳、陈国龙 2009 58 5700] 〖7] Li B Q, Zheng T C, Xia Z H 2009 Acta Phys. Sin. 58 7189 (in Chinese) [李炳乾、郑同场、夏正浩 2009 58 7189]
[7] Huang S R 2007 Ph.D. Dissertation (Xiamen: Xiamen University) (in Chinese) [黄生荣 2007 (博士学位论文) (厦门:厦门大学)]
[8] Huang S R, Tian H T, Chen C 2007 Chinese Lighting 5 83 (in Chinese) [黄生荣、田洪涛、陈 朝 2007 中国照明 5 83]
[9] Huang S R, Chen C 2007 Acta Phys. Sin. 56 4596 (in Chinese) [黄生荣、陈 朝 2007 56 4596]
[10] Chen C, Tian H T 2006 Chinese Patent CN200310121093.5 (in Chinese) [陈 朝、田洪涛 2006 中国发明专利 CN200310121 093.5]
[11] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 59 1268 (in Chinese)[薛正群、黄生荣、张保平、陈 朝 2010 59 1268]
[12] Osinski M, Zeller J, Chiu P C, Phillips B S 1996 Appl. Phys. Lett. 69 898
[13] Yang L, Ma X H, Feng Q, Hao Y 2008 Chin. Phys. B 17 2696
[14] Barton D L, Osinski M, Perlin P, Eliseev P G, Lee J 1999 Microelectron. Reliab. 39 1219
[15] Meneghesso G, Levada S, Zanoni E 2003 Microelectron. Reliab. 43 1737
[16] Li Y X, Min Y L, Zhou X Z, You X Z 2003 Chinese J. Inorg. Chem. 19 1169 (in Chinese) [李永绣、 闵宇霖、周雪珍、游效曾 2003 无机化学学报 19 1169]
[17] Hu J Z, Yang L Q, Kim L, Shin M W 2007 Semicond. Sci. Technol. 22 1249
[18] Yu L S 2006 Semiconductor Heterojunction Physics (Beijing: Science Press) pp78,84 (in Chinese) [虞丽生 2006 半导体异质结物理 (北京:科学出版社) 第78,84页]
[19] Hu J Z, Yang L Q, Shin M W 2008 J. Phys. D: Appl. Phys. 41 1
[20] Shi M 2004 Physics and Technology of Semiconductor Devices (Suzhou: Suzhou University Press) p93 (in Chinese) [施 敏 2004 半导体器件物理 (苏州:苏州大学出版社) 第93页]
[21] Hsu C Y, Lan W H, Wu Y S 2003 Appl. Phys. Lett. 83 2447
[22] Szekely V, Bien T V 1988 Solid-State Electronics 31 1363
[23] Rencz M, Poppe A, Kollar E 2005 IEEE Trans. Compon.Pack T. 28 51
[24] Osinski M, Barton D L, Perlin P, Lee J 1998 J. Cryst. Growth 189/190 808
[25] Fan C X 2006 Adcanced Display 65 11 (in Chinese) [范朝勋 2006 现代显示 65 11]
[26] Fang F B, Wang Y H, Song D H, Xu B H 2008 Chin J. Lumin. 29 353 (in Chinese) [方福波、王垚浩、宋代辉、徐彬海 2008 发光学报 29 353]
[27] Yamakoshi S, Hasegawa O, Hamaguchi H, Abe M, Ymaoka T 1977 Appl. Phys. Lett. 31 627
[28] Zhao M, Zhang W S, Xu L S 2006 Proceeding of the 10th National Seminar LED industry and academic conference Dalian, China, September 25—29, 2006 (in Chinese) [赵 敏、张万生、徐立生 2006 第十届全国LED产业研讨与学术会议论文集 大连,中国,9月25—29日,2006]
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