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The electrical and the optical characteristics of dual-wavelength light-emitting diode (LED) with the newly designed selective p-doped barriers are investigated numerically. The simulation results show that the selective p-doped barriers can improve the distribution equilibria of electron and hole concentrations in each quantum well (QW). The radiative recombination rate of QW is enhanced remarkably when specific number of p-doped barriers is adopted, and the electron leakage current is suppressed obviously with this new design. Therefore, the internal quantum efficiency is improved and the trend of efficiency drooping with the increase of current injection is also alleviated. Moreover, the curve peaks of the spectrum become quite uniform when the specific number of vertically-stacked QWs is adopted, and the spectral regulation of the dual-wavelength LED is more effective.
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Keywords:
- InGaN /
- p-doping /
- numerical simulation /
- dual-wavelength light-emitting diode
[1] Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
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[4] [5] [6] Chen G F, Tan X D, Wan W T, Sheng J, He Q Y, Tang C C, Zhu J J, Liu Z S, Zhao D G, Zhang S M 2011 Acta Phys.Sin. 60 076104 (in Chinese) [陈贵锋, 谭小动, 万尾甜, 沈俊, 郝秋艳, 唐成春, 朱建军, 刘宗顺, 赵德刚, 张书明 2011 60 076104]
[7] [8] Wang B, Li Z C, Yao R, Liang M, Yan F W, Wang G H 2011 Acta Phys. Sin. 60 016108 (in Chinese) [王兵, 李志聪, 姚然, 梁萌, 闫发旺, 王国宏 2011 60 016108]
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[11] [12] Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
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[15] [16] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[17] [18] Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[19] [20] Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[21] [22] Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[23] [24] Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[25] Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[26] [27] Chuang S L, Chang C S 1997 Semicond. Sci. Technol. 12 252
[28] [29] [30] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[31] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[32] [33] [34] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[35] Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204
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[1] Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
[2] [3] Hun J C, Rak J C, Min H K, Jae W H, Young M P, Yu S K, Ho S P, Cheol S S, Yong J P, Jong K K, Schubert E F 2009 Appl. Phys. Lett. 95 241109
[4] [5] [6] Chen G F, Tan X D, Wan W T, Sheng J, He Q Y, Tang C C, Zhu J J, Liu Z S, Zhao D G, Zhang S M 2011 Acta Phys.Sin. 60 076104 (in Chinese) [陈贵锋, 谭小动, 万尾甜, 沈俊, 郝秋艳, 唐成春, 朱建军, 刘宗顺, 赵德刚, 张书明 2011 60 076104]
[7] [8] Wang B, Li Z C, Yao R, Liang M, Yan F W, Wang G H 2011 Acta Phys. Sin. 60 016108 (in Chinese) [王兵, 李志聪, 姚然, 梁萌, 闫发旺, 王国宏 2011 60 016108]
[9] [10] Kish F A, Steranka F M, Defevere D C, Vanderwater D A, Park K G, Kuo C P, Osentowski T D, Peanasky M J, Yu J G, Fletcher R M, Steigerwald D A, Craford M G, Robbins V M 1994 Appl. Phys. Lett. 64 2839
[11] [12] Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[13] [14] Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[15] [16] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[17] [18] Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[19] [20] Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[21] [22] Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[23] [24] Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[25] Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[26] [27] Chuang S L, Chang C S 1997 Semicond. Sci. Technol. 12 252
[28] [29] [30] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[31] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[32] [33] [34] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[35] Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204
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