选择性p型量子阱垒层掺杂在双波长发光二极管光谱调控中的作用

陈峻; 范广涵; 张运炎

doi:10.7498/aps.61.088502

摘要

采用软件理论分析的方法对选择性p型掺杂量子阱垒层在InGaN双波长发光二极管(LED)中的光谱调控作用进行模拟分析.分析结果表明, 选择性p型掺杂对量子阱中电子和空穴浓度分布的均衡性起到一定的调控作用, 在适当选择p型掺杂量子阱垒层层数的条件下,能够改善量子阱中载流子的辐射复合速率, 降低溢出电子浓度,从而有效提高芯片内量子效率,并减缓内量子效率随驱动电流增大而快速下降的趋势.随着活性层量子阱增加到特定数量, 选择性p型掺杂的调控效果更加明显, LED芯片的双波长发光峰强度达到基本均衡.

关键词:

Abstract

The electrical and the optical characteristics of dual-wavelength light-emitting diode (LED) with the newly designed selective p-doped barriers are investigated numerically. The simulation results show that the selective p-doped barriers can improve the distribution equilibria of electron and hole concentrations in each quantum well (QW). The radiative recombination rate of QW is enhanced remarkably when specific number of p-doped barriers is adopted, and the electron leakage current is suppressed obviously with this new design. Therefore, the internal quantum efficiency is improved and the trend of efficiency drooping with the increase of current injection is also alleviated. Moreover, the curve peaks of the spectrum become quite uniform when the specific number of vertically-stacked QWs is adopted, and the spectral regulation of the dual-wavelength LED is more effective.

Keywords:

作者及机构信息

1.
华南师范大学光电子材料与技术研究所, 广州 510631;

2.
广东工业大学实验教学部, 广州 510006

基金项目: 国家自然科学基金(批准号: 61176043)、广东省战略性新兴产业专项基金(批准号: 2010A081002005)和广东省产学研计划(批准号: 2010B090400192)资助的课题.

Authors and contacts

1.
Institute of Opto-Electronic Materials and Technology, South China Normal University, Guangzhou 510631, China;

2.
Experimental Teaching Center, Guangdong University of Technology, Guangzhou 510006, China

Funds: Project supported by the National Natural Science Foundation of China (Grant No. 61176043), the Foundation for Strategic and Emerging Industries of Guangdong Province, China (Grant No. 2010A081002005), and the Program of Combination of Production and Research of Guangdong Province, China (Grant No. 2010B090400192).

参考文献

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施引文献

[1]	Kim M H, Schubert M F, Qi D, Jong K K, Schubert F, Joachim P 2007 Appl. Phys. Lett. 91 183507
[2]
[3]	Hun J C, Rak J C, Min H K, Jae W H, Young M P, Yu S K, Ho S P, Cheol S S, Yong J P, Jong K K, Schubert E F 2009 Appl. Phys. Lett. 95 241109
[4]
[5]
[6]	Chen G F, Tan X D, Wan W T, Sheng J, He Q Y, Tang C C, Zhu J J, Liu Z S, Zhao D G, Zhang S M 2011 Acta Phys.Sin. 60 076104 (in Chinese) [陈贵锋, 谭小动, 万尾甜, 沈俊, 郝秋艳, 唐成春, 朱建军, 刘宗顺, 赵德刚, 张书明 2011 60 076104]
[7]
[8]	Wang B, Li Z C, Yao R, Liang M, Yan F W, Wang G H 2011 Acta Phys. Sin. 60 016108 (in Chinese) [王兵, 李志聪, 姚然, 梁萌, 闫发旺, 王国宏 2011 60 016108]
[9]
[10]	Kish F A, Steranka F M, Defevere D C, Vanderwater D A, Park K G, Kuo C P, Osentowski T D, Peanasky M J, Yu J G, Fletcher R M, Steigerwald D A, Craford M G, Robbins V M 1994 Appl. Phys. Lett. 64 2839
[11]
[12]	Xue Z Q, Huang S R, Zhang B P, Chen Z 2010 Acta Phys. Sin. 59 5002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[13]
[14]	Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[15]
[16]	Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[17]
[18]	Zhang Y Y, Fan G H 2011 Acta Phys. Sin. 60 018502 (in Chinese) [张运炎, 范广涵 2011 60 018502]
[19]
[20]	Zhang Y Y, Fan G H, Zhang Y, Zheng S W 2011 Acta Phys. Sin. 60 028503 (in Chinese) [张运炎, 范广涵, 章勇, 郑树文 2011 60 028503]
[21]
[22]	Yamada M, Narukawa Y, Mukai T 2002 Jpn. J. Appl. Phys. 41 L246
[23]
[24]	Damilano B, Grandjean N, Pernot C, Massies J 2001 Jpn. J. Appl. Phys. 40 L918
[25]	Simon L Z 1998 Crosslight (Burnaby: Crosslight Software Inc.)
[26]
[27]	Chuang S L, Chang C S 1997 Semicond. Sci. Technol. 12 252
[28]
[29]
[30]	Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[31]	Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[32]
[33]
[34]	Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[35]	Fiorentini V, Bernardini F, Ambacher O 2002 Appl. Phys. Lett. 80 1204

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