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A two-dimensional simulation of electrical and optical characteristics of the dual-wavelength LED with different numbers of quantum wells is conducted with APSYS software. The results show that the increase of the number of quantum wells will cause uneven distribution of hole concentrations. Therefore, the increase in the number of quantum wells cannot effectively enhance carrier recombination rate, internal quantum efficiency and luminous intensity. Furthermore, it will lead to the rising of threshold voltage and affect the energy conversion efficiency.
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Keywords:
- quantum well /
- number /
- numerical simulate /
- dual-wavelength LED
[1] Sheu J K, Chang S J, Kuo C H, Su Y K, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photon. Technol. Lett. 15 18
[2] Chen C H, Chang S J, Su Y K, Sheu J K, Chen J F, Kuo C H, Lin Y C 2002 IEEE Photon. Technol. Lett. 14 2532
[3] Li Y, Zheng R S, Feng Y C, Liu S H, Niu H B 2006 Chin. Phys. 15 702
[4] Shao J P, Hu H, Guo W P, Wang L, Luo Y, Sun C Z, Hao Z B 2005 Acta Phys. Sin. 54 3905(in Chinese)[邵嘉平、胡 卉、郭文平、汪 莱、罗 毅、孙长征、郝智彪 2005 54 3905]
[5] Zheng D S, Qian K Y, Luo Y 2005 Semiconductor Optoelectronics 26 87
[6] Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semiconductor Optoelectronics 28 349
[7] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8] Qi Y D, Liang H, Tang W, Lu Z D, Kei May Lau 2004 Journal of Crystal Growth 272 333
[9] Damilano B, Grandjean N, Pernot C, Massies J 2001 J. Appl. Phys. 40 918
[10] Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[11] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[12] Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[13] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[14] Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[15] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[16] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[17] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[18] Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204
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[1] Sheu J K, Chang S J, Kuo C H, Su Y K, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photon. Technol. Lett. 15 18
[2] Chen C H, Chang S J, Su Y K, Sheu J K, Chen J F, Kuo C H, Lin Y C 2002 IEEE Photon. Technol. Lett. 14 2532
[3] Li Y, Zheng R S, Feng Y C, Liu S H, Niu H B 2006 Chin. Phys. 15 702
[4] Shao J P, Hu H, Guo W P, Wang L, Luo Y, Sun C Z, Hao Z B 2005 Acta Phys. Sin. 54 3905(in Chinese)[邵嘉平、胡 卉、郭文平、汪 莱、罗 毅、孙长征、郝智彪 2005 54 3905]
[5] Zheng D S, Qian K Y, Luo Y 2005 Semiconductor Optoelectronics 26 87
[6] Shen G D, Zhang N G, Liu J P, Niu N H, Li T, Xing Y H, Lin Q M, Guo X 2007 Semiconductor Optoelectronics 28 349
[7] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[8] Qi Y D, Liang H, Tang W, Lu Z D, Kei May Lau 2004 Journal of Crystal Growth 272 333
[9] Damilano B, Grandjean N, Pernot C, Massies J 2001 J. Appl. Phys. 40 918
[10] Li Y L, Gessmann T H 2003 J. Appl. Phys. 94 2167
[11] Yamada M, Narukawa Y, Mukai T 2002 J. Appl. Phys. 41 246
[12] Chen H S, Yeh D M, Lu C F 2006 IEEE Photon. Technol. Lett. 18 1430
[13] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M 2001 Appl. Phys. Lett. 79 2532
[14] Chuang S L, Chang C S 1997 Semicond. Sci. and Technol. 12 252
[15] Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491
[16] Goano M, Bellotti E, Ghillino E, Garetto C, Ghione G, Brennan K F 2000 J. Appl. Phys. 88 6476
[17] Bernardini F, Fiorentini V, Vanderbilt D 1997 Phys. Rev. B 56 10024
[18] Fiorentini V, Bernardini F, Ambacher O 2002 App. Phys. Lett. 80 1204
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