Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector

Deng Yi; Zhao De-Gang; Wu Liang-Liang; Liu Zong-Shun; Zhu Jian-Jun; Jiang De-Sheng; Zhang Shu-Ming; Liang Jun-Wu

doi:10.7498/aps.59.8903

Abstract

We have investigated the effect of AlGaN layer parameter on the ultraviolet response of n+-GaN/i-AlxGa1－xN/n+-GaN structure ultraviolet-infrared photodetector and its physical mechanism. Through the simulation, it is found that the decrease of AlGaN background concentration has a positive effect on device’s ultraviolet quantum efficiency. When AlGaN layer background concentration cannot be reduced, the decrease of its thickness can ensure the efficiency. Besides, interfical state should be minimized during materials growth and device fabrication. In addition, small reverse bias voltage can greatly increase ultraviolet quantum efficiency. All these phenomena may be mainly attributed to the existence of the back-to-back heterojunction and the opposite electrical field. It is suggested that we need to adjust structural parameters to obtain high quantum efficiency according to the materials quality in device design.

Keywords:

GaN /
ultraviolet and infrared photodetector /
quantum efficiency

Authors and contacts

1.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China

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Cited By

[1]	Cen L Q, Shen B, Qin Z X, Zhang G Y 2009 Chin. Phys. B 18 5366
[2]	Gmachl C, Ng H M, Cho A Y 2000 Appl. Phys. Lett. 77 334
[3]	Ariyawansa G, Rinzan M B M, Alevli M, Strassburg M, Dietz N, Perera A G U, Matsik S G, Asghar A, Ferguson I T, Luo H, Bezinger A, Liu H C 2006 Appl. Phys. Lett. 89 091113
[4]	Biyikli N, Aytur O, Kimukin I, Tut T, Ozbay E 2002 Appl. Phys. Lett. 81 3272
[5]	Walker D, Zhang X, Kung P, Saxler A, Javadpour S, Xu J, Razeghi M 1996 Appl. Phys. Lett. 68 2100
[6]	Perera A G U, Ariyawansa G, Rinzan M B M, Stevens M, Alevli M, Dietz N, Matsik S G, Asghar A, Ferguson I T, Luo H, Bezinger A, Liu H C 2007 Infrared Phys. Techn. 50 142
[7]	Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Liang J W, Yang H 2007 Appl. Phys. Lett. 90 062106
[8]	Zhang S, Zhao D G, Liu Z S, Zhu J J, Zhang S M, Wang Y T, Duan L H, Liu W B, Jiang D S, Yang H 2009 Acta Phys. Sin. 58 7952 (in Chinese) [张爽、赵德刚、刘宗顺、朱建军、张书明、王玉田、段俐宏、刘文宝、江德生、杨辉 2009 58 7952] 〖9] Zhao J Z, Lin Z J, Corrigan T D, Zhang Y, Lü Y J, Lu W, Wang Z G, Chen H 2009 Chin. Phys. B 18 3980
[9]	Wu Y X, Zhu J J, Chen G F, Zhang S M, Jiang D S, Liu Z S, Zhao D G, Wang H, Wang Y T, Yang H 2010 Chin. Phys. B 19 036801
[10]	Zhao D G, Jiang D S, Zhu J J, Liu Z S, Zhang S M, Yang H 2008 Semicond. Sci. Technol. 23 095021
[11]	Sze S M 1981 Physics of Semiconductor Devices (6th ed) (New York: John Wily & Sons) p321
[12]	Zhang X, Kung P, Walker D, Biotrowski J, Rogalski A, Sazier A, Razeghi M 1995 Appl. Phys. Lett. 67 2028
[13]	Jain S C, Willander M, Narayan J, Van Overstraeten R 2000 J. Appl. Phys. 87 333
[14]	Li J, Nam K B, Kim K H, Lin J Y, Jiang H X 2001 Appl. Phys. Lett. 78 61

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Vol. 59, Issue 12 - 2010-06-20

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