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Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang. Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica,
2017, 66(6): 067903.
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Sun Pei, Li Jian-Jun, Deng Jun, Han Jun, Ma Ling-Yun, Liu Tao. Temperature window of the (Al0.1Ga0.9)0.5In0.5P growth by MOCVD. Acta Physica Sinica,
2013, 62(2): 026801.
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Qin Jie-Ming, Cao Jian-Ming, Jiang Da-Yong. Growth and characterization of the Mg0.57Zn0.43O alloy film. Acta Physica Sinica,
2013, 62(13): 138101.
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Lin Zhi-Yu, Zhang Jin-Cheng, Xu Sheng-Rui, Lü Ling, Liu Zi-Yang, Ma Jun-Cai, Xue Xiao-Yong, Xue Jun-Shuai, Hao Yue. TEM study of GaN films on vicinal sapphire (0001) substrates by MOCVD. Acta Physica Sinica,
2012, 61(18): 186103.
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Li Biao, Chang Ben-Kang, Xu Yuan, Du Xiao-Qing, Du Yu-Jie, Wang Xiao-Hui, Zhang Jun-Ju. Research and development of GaN photocathode. Acta Physica Sinica,
2011, 60(8): 088503.
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Qiao Jian-Liang, Chang Ben-Kang, Qian Yun-Sheng, Wang Xiao-Hui, Li Biao, Xu Yuan. Photoemission mechanism of GaN vacuum surface electron source. Acta Physica Sinica,
2011, 60(12): 127901.
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Xing Hai-Ying, Fan Guang-Han, Yang Xue-Lin, Zhang Guo-Yi. Optical properties of GaMnN films grown by metal-organic chemical vapor deposition. Acta Physica Sinica,
2010, 59(1): 504-507.
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Deng Yi, Zhao De-Gang, Wu Liang-Liang, Liu Zong-Shun, Zhu Jian-Jun, Jiang De-Sheng, Zhang Shu-Ming, Liang Jun-Wu. Effects of AlGaN layer parameter on ultraviolet response of n+-GaN/i-AlxGa1-xN/n+-GaN structure ultraviolet-infrared photodetector. Acta Physica Sinica,
2010, 59(12): 8903-8909.
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Qiao Jian-Liang, Tian Si, Chang Ben-Kang, Du Xiao-Qing, Gao Pin. Activation mechanism of negative electron affinity GaN photocathode. Acta Physica Sinica,
2009, 58(8): 5847-5851.
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Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou. MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica,
2007, 56(11): 6717-6721.
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Chen Xin-Liang, Xue Jun-Ming, Zhang De-Kun, Sun Jian, Ren Hui-Zhi, Zhao Ying, Geng Xin-Hua. Effect of substrate temperature on the ZnO thin films as TCO in solar cells grown by MOCVD technique. Acta Physica Sinica,
2007, 56(3): 1563-1567.
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Li Tong, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Zhang Nian-Guo, Xing Yan-Hui, Han Jun, Liu Ying, Gao Guo, Shen Guang-Di. Studies on electrical properties of delta-doping p-GaN films. Acta Physica Sinica,
2007, 56(2): 1036-1040.
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Song Shu-Fang, Chen Wei-De, Xu Zhen-Jia, Xu Xu-Rong. Deep level transient spectroscopy studies of Er and Pr implanted GaN films. Acta Physica Sinica,
2006, 55(3): 1407-1412.
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Pan Jiao-Qing, Zhao Qian, Zhu Hong-Liang, Zhao Ling-Juan, Ding Ying, Wang Bao-Jun, Zhou Fan, Wang Lu-Feng, Wang Wei. Material growth and device fabrication of highly strained InGaAs/InGaAsP long wavelength distributed feedback lasers. Acta Physica Sinica,
2006, 55(10): 5216-5220.
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Peng Dong-Sheng, Feng Yu-Chun, Wang Wen-Xin, Liu Xiao-Feng, Shi Wei, Niu Han-Ben. A new method to grow high quality GaN film by MOCVD. Acta Physica Sinica,
2006, 55(7): 3606-3610.
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Yuan Hong-Tao, Zhang Yao, Gu Jing-Hua. A study on the in-situ growth of highly oriented ZnO whisker. Acta Physica Sinica,
2004, 53(2): 646-650.
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Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xu Fa-Qiang, Xie Chang-Kun, Li Yong-Hua, Liu Feng-Qin, K. Yibulaxin. Photoelectron diffraction study on the polarity of GaN surface. Acta Physica Sinica,
2004, 53(4): 1171-1176.
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Ma Hong, Chen Si-Hai, Jin Jin-Yan, Yi Xin-Jian, Zhu Guang-Xi. Study on 1.55μ m AlGaInAs-InP polarization-insensitive semiconductor optical amplifier and its temperature characterizatics. Acta Physica Sinica,
2004, 53(6): 1868-1872.
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Huang Jin-Song, Dong Xun, Liu Xiang-Lin, Xu Zhong-Ying, Ge Wei-Kun. A study of the growth and optical properties of AlInGaN alloys. Acta Physica Sinica,
2003, 52(10): 2632-2637.
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Zhang Shi-Bin, Kong Guang-Lin, Xu Yan-Yue, Wang Yong-Qian, Diao Hong-Wei, Liao Xian-Bo. . Acta Physica Sinica,
2002, 51(1): 111-114.
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