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The distribution of injected current in the active region of external cavity oxide-confined photonic crystal vertical cavity surface emitting lasers is studied extensively. An advanced three-dimensional model of current distribution is used to analyse the effects of photonic crystal structures on current density distribution and series resistance of the device. It is found that the deeper the photonic crystal holes are, the worse the circular symmetry of the current density distribution is and the higher the series resistance is,especially when the ethching depths of holes are larger than 2 μm. Different patterns of photonic crystal structures have a great imfluence on current density distribution and circular symmetry. The results are beneficial to the research and the design of external cavity oxide-confined photonic crystal vertical cavity surface emitting lasers.
[1] Xu X S,Wang C X,Du W,Zhao Z M,Hu H Y,Song Q,Lu L,Kan Q,Chen H D 2007 Physics 36 15 (in Chinese) [许兴胜、王春霞、杜 伟、赵致民、胡海洋、宋 倩、鲁 琳、阚 强、陈弘达2007 物理 36 15]
[2] Hong G P,Se H K,Min K S,Young G J,Sung B K,Yong H L 2005 Quantum Electron. 41 1131
[3] Noriyuki Y,Aaron J D,Kent D C 2003 Quantum Electron.9 1439
[4] Dae S S,Se H K,Hong G P,Chang K K,Yong H L 2002 Appl.Phys.Lett. 80 3901
[5] Lan Y P,Chen Y F,Huang K F,Lai H C,Pan J S 2002 IEEE Photon.Technol.Lett. 14 272
[6] Zhang L,Li S G,Yao Y Y,Fu B,Zhang M Y,Zheng Y 2010 Acta Phys.Sin. 59 1101(in Chinese)[张 磊、李曙光、姚艳艳、付 博、张美艳、郑 义 2010 59 1101]
[7] Jiang L H,Hou L T 2010 Acta Phys.Sin. 59 1095(in Chinese)[姜凌红、侯蓝田2010 59 1095]
[8] Liu A J,Xing M X,Qu H W,Chen W,Zhou W J,Zheng W H 2009 Appl.Phys.Lett. 94 191105
[9] Tomasz C,Robert P S,Maciej D,Wlodzimierz N,Hugo T,Krassimir P 2009 J.Appl.Phys. 105 093102
[10] Yang H P D,Hsu I C,Chang Y H,Lai F I,Yu H C,Lin G,Hsiao R S,Maleev N A,Blokhin S A,Kuo H C,Chi J Y 2008 J.Lightwave Technol. 26 1387
[11] Liu J A,Xing M X,Qu H W,Chen W,Zhou W J,Zheng W H 2010 Acta Phys.Sin. 59 1035 (in Chinese) [刘金安、邢名欣、渠红伟、陈 微、周文君、郑婉华 2010 59 1035]
[12] Liu Y,Gong H R,Wei Y Y,Gong Y B,Wang W X,Liao F J 2009 Acta Phys.Sin. 58 7845(in Chinese) [刘 漾、巩华荣、魏彦玉、宫玉彬、王文祥、廖复疆 2009 58 7845]
[13] Cai L G,Wu J 2008 Acta Phys.Sin. 57 3531(in Chinese)[蔡鲁刚、吴 坚 2008 57 3531]
[14] Yang H,Guo X,Guan B L,Wang T X,Shen G D 2008 Acta Phys.Sin. 57 2959(in Chinese)[杨 浩、郭 霞、关宝璐、王同喜、沈光地 2008 57 2959]
[15] Hegbolm E R, Margalit N, Thibeault B J,Coldren L A,Bowers J E 1997 Proc. SPIE 3003 176
[16] Lysak V V,Chang K S, Lee Y T 2005 Appl. Phys. Lett. 87 231118
[17] Liu N K,Zhu B S,Luo J S 2005 Semiconductor Physics (Beijing: National Defense Industry Press) p99 (in Chinese) [刘恩科、朱秉升、罗晋生 2005 半导体物理学(北京:国防工业出版社) 第99页]
[18] Wang K 2008 M.S. Thesis (Beijing: Institute of Semiconductors,Chinese Academy of Sciences) (in Chinese) [王 科 2008 硕士学位论文 (北京:中国科学院半导体研究所)]
[19] Xie Y Y,Xu C,Kan Q,Wang C X,Liu Y M,Wang B Q,Chen H D,Shen G D 2010 Chin.Phys.Lett. 27 024206
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[1] Xu X S,Wang C X,Du W,Zhao Z M,Hu H Y,Song Q,Lu L,Kan Q,Chen H D 2007 Physics 36 15 (in Chinese) [许兴胜、王春霞、杜 伟、赵致民、胡海洋、宋 倩、鲁 琳、阚 强、陈弘达2007 物理 36 15]
[2] Hong G P,Se H K,Min K S,Young G J,Sung B K,Yong H L 2005 Quantum Electron. 41 1131
[3] Noriyuki Y,Aaron J D,Kent D C 2003 Quantum Electron.9 1439
[4] Dae S S,Se H K,Hong G P,Chang K K,Yong H L 2002 Appl.Phys.Lett. 80 3901
[5] Lan Y P,Chen Y F,Huang K F,Lai H C,Pan J S 2002 IEEE Photon.Technol.Lett. 14 272
[6] Zhang L,Li S G,Yao Y Y,Fu B,Zhang M Y,Zheng Y 2010 Acta Phys.Sin. 59 1101(in Chinese)[张 磊、李曙光、姚艳艳、付 博、张美艳、郑 义 2010 59 1101]
[7] Jiang L H,Hou L T 2010 Acta Phys.Sin. 59 1095(in Chinese)[姜凌红、侯蓝田2010 59 1095]
[8] Liu A J,Xing M X,Qu H W,Chen W,Zhou W J,Zheng W H 2009 Appl.Phys.Lett. 94 191105
[9] Tomasz C,Robert P S,Maciej D,Wlodzimierz N,Hugo T,Krassimir P 2009 J.Appl.Phys. 105 093102
[10] Yang H P D,Hsu I C,Chang Y H,Lai F I,Yu H C,Lin G,Hsiao R S,Maleev N A,Blokhin S A,Kuo H C,Chi J Y 2008 J.Lightwave Technol. 26 1387
[11] Liu J A,Xing M X,Qu H W,Chen W,Zhou W J,Zheng W H 2010 Acta Phys.Sin. 59 1035 (in Chinese) [刘金安、邢名欣、渠红伟、陈 微、周文君、郑婉华 2010 59 1035]
[12] Liu Y,Gong H R,Wei Y Y,Gong Y B,Wang W X,Liao F J 2009 Acta Phys.Sin. 58 7845(in Chinese) [刘 漾、巩华荣、魏彦玉、宫玉彬、王文祥、廖复疆 2009 58 7845]
[13] Cai L G,Wu J 2008 Acta Phys.Sin. 57 3531(in Chinese)[蔡鲁刚、吴 坚 2008 57 3531]
[14] Yang H,Guo X,Guan B L,Wang T X,Shen G D 2008 Acta Phys.Sin. 57 2959(in Chinese)[杨 浩、郭 霞、关宝璐、王同喜、沈光地 2008 57 2959]
[15] Hegbolm E R, Margalit N, Thibeault B J,Coldren L A,Bowers J E 1997 Proc. SPIE 3003 176
[16] Lysak V V,Chang K S, Lee Y T 2005 Appl. Phys. Lett. 87 231118
[17] Liu N K,Zhu B S,Luo J S 2005 Semiconductor Physics (Beijing: National Defense Industry Press) p99 (in Chinese) [刘恩科、朱秉升、罗晋生 2005 半导体物理学(北京:国防工业出版社) 第99页]
[18] Wang K 2008 M.S. Thesis (Beijing: Institute of Semiconductors,Chinese Academy of Sciences) (in Chinese) [王 科 2008 硕士学位论文 (北京:中国科学院半导体研究所)]
[19] Xie Y Y,Xu C,Kan Q,Wang C X,Liu Y M,Wang B Q,Chen H D,Shen G D 2010 Chin.Phys.Lett. 27 024206
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