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A method of balancing the output power and threshold current property of vertical cavity surface emitting laser is studied. The relationship between proton implantation energy and device performance is analyzed by simulation and experiment. It is found that a higher injection energy can destroy the active region, thus reducing the output power property. The threshold current will be increased since a lower injection energy may weaken the restriction on the injection current. The results indicate that 315 keV injection energy is the right choice for our device structure. The output power and threshold current obtained under 10 μm aperture are 1.7 mW and 4.3 mW, respectively.
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Keywords:
- proton injection energy /
- vertical cavity surface emitting laser /
- output power /
- threshold current
[1] Hugues-Salas E, Jin X Q, Giddings R P, Hong, Y, Mansoor S, Villafranca A, Tang J M 2012 IEEE Photonics J. 4 143
[2] Tian Z B, Chen C, Plant D V, Hugues-Salas E, Jin X Q, Giddings R P, Hong Y, Mansoor S, Villafranca A, Tang J M 2012 IEEE Photonics Technol. Lett. 4 143
[3] Chow W W, Choquette K D, Crawford M H, Lear K L, Hadley G R 1997 IEEE J. Quantum Electron. 33 1810
[4] Zan-Kuin S, Jingchang Y, Shooti-Jinn C 2002 IEEE Photonics Technol. Lett. 14 1388
[5] Ressel P, Strusny H, Gramlich S, Zeimer U, Sebastian J, Vogel K 1993 Electron. Lett. 29 918
[6] Leisher P O, Sulkin J D, Choquette K D 2007 IEEE J. Sel. Top. Quantum Electron. 13 1290
[7] Mawst L J 2003 IEEE Circuits Dev. Mag. 19 34
[8] Bao L, Kim N H, Mawst L J, Elkin N N, Troshchieva V N, Vysotsky D V, Napartovich A P 2007 IEEE Photonics Technol. Lett. 19 239
[9] Bao L, Kim N H, Mawst L J, Elkin N N, Troshchieva V N, Vysotsky D V, Napartovich A P 2005 IEEE J. Sel. Top. Quantum Electron. 11 968
[10] Zhou D L, Mawst L J 2002 IEEE J. Quantum Electron. 38 1599
[11] Pearton S J 1993 Int. J. Mod. Phys. B 7 4687
[12] Zavada J M, Jenkinson H A, Wilson R G, Sadana D K 1985 J. Appl. Phys. 57 2299
[13] Morgan D V, Eisen F H, Ezis A 1981 Solid-State Electron. 128 109
[14] Jiang W, Gaw C, Kiely P, Lawrence B, Lebby M, Claisse P R 1997 Electron. Lett. 33 137
[15] Cheng Z Q, Sun X W, Xia G Q, Li H Q, Sheng H M, Qian R 2000 Acta Phys. Sin. 49 375 (in Chinese) [程知群, 孙晓伟, 夏冠群, 李洪芹, 盛怀茂, 钱蓉 2000 49 375]
[16] Ramaswamy A, van der Ziel J P, Biard J R, Johnson R, Tatum J A 1998 IEEE J. Quantum Electron. 34 2233
[17] Mao M M, Xu C, Wei S M, Xie Y Y, Cao T 2012 in Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration Wuhan November 2-5, 2011, p8333
[18] Wang B Q, Xu C, Liu Y M, Xie Y Y, Liu F, Zhao Z B, Zhou K, Shen G D 2010 Acta Phys. Sin. 59 8542 (in Chinese) [王宝强, 徐晨, 刘英明, 解意洋, 刘发, 赵振波, 周康, 沈光地 2010 59 8542]
[19] Ziegler J F, Biersack J P, Littmark U 1985 Stopping and Range of Ions in Solids (New York, Pergamon Press) pp17-25
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[1] Hugues-Salas E, Jin X Q, Giddings R P, Hong, Y, Mansoor S, Villafranca A, Tang J M 2012 IEEE Photonics J. 4 143
[2] Tian Z B, Chen C, Plant D V, Hugues-Salas E, Jin X Q, Giddings R P, Hong Y, Mansoor S, Villafranca A, Tang J M 2012 IEEE Photonics Technol. Lett. 4 143
[3] Chow W W, Choquette K D, Crawford M H, Lear K L, Hadley G R 1997 IEEE J. Quantum Electron. 33 1810
[4] Zan-Kuin S, Jingchang Y, Shooti-Jinn C 2002 IEEE Photonics Technol. Lett. 14 1388
[5] Ressel P, Strusny H, Gramlich S, Zeimer U, Sebastian J, Vogel K 1993 Electron. Lett. 29 918
[6] Leisher P O, Sulkin J D, Choquette K D 2007 IEEE J. Sel. Top. Quantum Electron. 13 1290
[7] Mawst L J 2003 IEEE Circuits Dev. Mag. 19 34
[8] Bao L, Kim N H, Mawst L J, Elkin N N, Troshchieva V N, Vysotsky D V, Napartovich A P 2007 IEEE Photonics Technol. Lett. 19 239
[9] Bao L, Kim N H, Mawst L J, Elkin N N, Troshchieva V N, Vysotsky D V, Napartovich A P 2005 IEEE J. Sel. Top. Quantum Electron. 11 968
[10] Zhou D L, Mawst L J 2002 IEEE J. Quantum Electron. 38 1599
[11] Pearton S J 1993 Int. J. Mod. Phys. B 7 4687
[12] Zavada J M, Jenkinson H A, Wilson R G, Sadana D K 1985 J. Appl. Phys. 57 2299
[13] Morgan D V, Eisen F H, Ezis A 1981 Solid-State Electron. 128 109
[14] Jiang W, Gaw C, Kiely P, Lawrence B, Lebby M, Claisse P R 1997 Electron. Lett. 33 137
[15] Cheng Z Q, Sun X W, Xia G Q, Li H Q, Sheng H M, Qian R 2000 Acta Phys. Sin. 49 375 (in Chinese) [程知群, 孙晓伟, 夏冠群, 李洪芹, 盛怀茂, 钱蓉 2000 49 375]
[16] Ramaswamy A, van der Ziel J P, Biard J R, Johnson R, Tatum J A 1998 IEEE J. Quantum Electron. 34 2233
[17] Mao M M, Xu C, Wei S M, Xie Y Y, Cao T 2012 in Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration Wuhan November 2-5, 2011, p8333
[18] Wang B Q, Xu C, Liu Y M, Xie Y Y, Liu F, Zhao Z B, Zhou K, Shen G D 2010 Acta Phys. Sin. 59 8542 (in Chinese) [王宝强, 徐晨, 刘英明, 解意洋, 刘发, 赵振波, 周康, 沈光地 2010 59 8542]
[19] Ziegler J F, Biersack J P, Littmark U 1985 Stopping and Range of Ions in Solids (New York, Pergamon Press) pp17-25
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