质子注入能量对垂直腔面发射激光器的阈值和功率的影响

毛明明; 徐晨; 魏思民; 解意洋; 刘久澄; 许坤

doi:10.7498/aps.61.214207

摘要

文章研究了如何兼顾质子注入型垂直腔面发射激光器的功率和阈值性能. 从模拟和实验两方面分析了质子注入能量与器件功率和阈值特性的关系. 发现注入能量过高时, 损伤有源区, 降低了功率性能. 而能量过低则会减弱对注入电流的限制, 增加阈值. 计算和实验结果表明, 对于文中的器件结构, 315 keV的注入能量是合适的. 在10 μm的注入孔径下获得器件的阈值为4.3 mA, 功率为1.7 mW.

关键词:

A method of balancing the output power and threshold current property of vertical cavity surface emitting laser is studied. The relationship between proton implantation energy and device performance is analyzed by simulation and experiment. It is found that a higher injection energy can destroy the active region, thus reducing the output power property. The threshold current will be increased since a lower injection energy may weaken the restriction on the injection current. The results indicate that 315 keV injection energy is the right choice for our device structure. The output power and threshold current obtained under 10 μm aperture are 1.7 mW and 4.3 mW, respectively.

Keywords:

proton injection energy /
vertical cavity surface emitting laser /
output power /
threshold current

作者及机构信息

1.
北京工业大学光电子技术实验室, 北京 100124

基金项目: 国家高技术研究发展计划(批准号: 2008AA03Z402)、国家自然科学基金(批准号: 61076044)和北京市自然科学基金(批准号: 4092007, 4102003, 4112006)资助的课题．

Authors and contacts

1.
Key Laboratory of Optoelectronics Technology Ministry of Education, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2008AA03Z402), the National Natural Science Foundation of China (Grant No. 61076044 ), and the Natural Science Foundation of Beijing, China (Grant Nos. 4092007, 4102003, 4112006).

参考文献

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施引文献

[1]	Hugues-Salas E, Jin X Q, Giddings R P, Hong, Y, Mansoor S, Villafranca A, Tang J M 2012 IEEE Photonics J. 4 143
[2]	Tian Z B, Chen C, Plant D V, Hugues-Salas E, Jin X Q, Giddings R P, Hong Y, Mansoor S, Villafranca A, Tang J M 2012 IEEE Photonics Technol. Lett. 4 143
[3]	Chow W W, Choquette K D, Crawford M H, Lear K L, Hadley G R 1997 IEEE J. Quantum Electron. 33 1810
[4]	Zan-Kuin S, Jingchang Y, Shooti-Jinn C 2002 IEEE Photonics Technol. Lett. 14 1388
[5]	Ressel P, Strusny H, Gramlich S, Zeimer U, Sebastian J, Vogel K 1993 Electron. Lett. 29 918
[6]	Leisher P O, Sulkin J D, Choquette K D 2007 IEEE J. Sel. Top. Quantum Electron. 13 1290
[7]	Mawst L J 2003 IEEE Circuits Dev. Mag. 19 34
[8]	Bao L, Kim N H, Mawst L J, Elkin N N, Troshchieva V N, Vysotsky D V, Napartovich A P 2007 IEEE Photonics Technol. Lett. 19 239
[9]	Bao L, Kim N H, Mawst L J, Elkin N N, Troshchieva V N, Vysotsky D V, Napartovich A P 2005 IEEE J. Sel. Top. Quantum Electron. 11 968
[10]	Zhou D L, Mawst L J 2002 IEEE J. Quantum Electron. 38 1599
[11]	Pearton S J 1993 Int. J. Mod. Phys. B 7 4687
[12]	Zavada J M, Jenkinson H A, Wilson R G, Sadana D K 1985 J. Appl. Phys. 57 2299
[13]	Morgan D V, Eisen F H, Ezis A 1981 Solid-State Electron. 128 109
[14]	Jiang W, Gaw C, Kiely P, Lawrence B, Lebby M, Claisse P R 1997 Electron. Lett. 33 137
[15]	Cheng Z Q, Sun X W, Xia G Q, Li H Q, Sheng H M, Qian R 2000 Acta Phys. Sin. 49 375 (in Chinese) [程知群, 孙晓伟, 夏冠群, 李洪芹, 盛怀茂, 钱蓉 2000 49 375]
[16]	Ramaswamy A, van der Ziel J P, Biard J R, Johnson R, Tatum J A 1998 IEEE J. Quantum Electron. 34 2233
[17]	Mao M M, Xu C, Wei S M, Xie Y Y, Cao T 2012 in Photonics and Optolectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration Wuhan November 2-5, 2011, p8333
[18]	Wang B Q, Xu C, Liu Y M, Xie Y Y, Liu F, Zhao Z B, Zhou K, Shen G D 2010 Acta Phys. Sin. 59 8542 (in Chinese) [王宝强, 徐晨, 刘英明, 解意洋, 刘发, 赵振波, 周康, 沈光地 2010 59 8542]
[19]	Ziegler J F, Biersack J P, Littmark U 1985 Stopping and Range of Ions in Solids (New York, Pergamon Press) pp17-25

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