| [1] |
Wang Dang-Hui, Xu Tian-Han, Wang Rong, Luo She-Ji, Yao Ting-Zhen. Research on emission transition mechanisms of InGaN/GaN multiple quantum well light-emitting diodes using low-frequency current noise. Acta Physica Sinica,
2015, 64(5): 050701.
doi: 10.7498/aps.64.050701
|
| [2] |
Chen Zhan-Xu, Wan Wei, He Ying-Ji, Chen Geng-Yan, Chen Yong-Zhu. Light-extraction enhancement of GaN-based LEDs by closely-packed nanospheres monolayer. Acta Physica Sinica,
2015, 64(14): 148502.
doi: 10.7498/aps.64.148502
|
| [3] |
Mao Qing-Hua, Liu Jun-Lin, Quan Zhi-Jue, Wu Xiao-Ming, Zhang Meng, Jiang Feng-Yi. Influences of p-type layer structure and doping profile on the temperature dependence of the foward voltage characteristic of GaInN light-emitting diode. Acta Physica Sinica,
2015, 64(10): 107801.
doi: 10.7498/aps.64.107801
|
| [4] |
Lin Zhen-Xu, Lin Ze-Wen, Zhang Yi, Song Chao, Guo Yan-Qing, Wang Xiang, Huang Xin-Tang, Huang Rui. Electroluminescence from Si nanostructure-based silicon nitride light-emitting devices. Acta Physica Sinica,
2014, 63(3): 037801.
doi: 10.7498/aps.63.037801
|
| [5] |
Tang Yi-Dan, Shen Guang-Di, Guo Xia, Guan Bao-Lu, Jiang Wen-Jing, Han Jin-Ru. High performance resonant cavity light emitting diode with dielectric distributed Bragg reflectors. Acta Physica Sinica,
2012, 61(1): 018503.
doi: 10.7498/aps.61.018503
|
| [6] |
Yue Qing-Yang, Kong Fan-Min, Li Kang, Zhao Jia. Study on the light extraction efficiency of GaN-based light emitting diode by using the defects of the photonic crystals. Acta Physica Sinica,
2012, 61(20): 208502.
doi: 10.7498/aps.61.208502
|
| [7] |
Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica,
2012, 61(12): 127807.
doi: 10.7498/aps.61.127807
|
| [8] |
Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
doi: 10.7498/aps.60.098107
|
| [9] |
Zhu Hai-Na, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Kong Chao, Yan Guang, Gong Wei. Influence of well structure on efficiency of organic light-emitting diodes. Acta Physica Sinica,
2010, 59(11): 8093-8097.
doi: 10.7498/aps.59.8093
|
| [10] |
Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao. Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica,
2009, 58(10): 7189-7193.
doi: 10.7498/aps.58.7189
|
| [11] |
Huang Rui, Dong Heng-Ping, Wang Dan-Qing, Chen Kun-Ji, Ding Hong-Lin, Xu Jun, Li Wei, Ma Zhong-Yuan. Electroluminescence from Si-rich SiNx/N-rich SiNy multilayer light-emitting devices. Acta Physica Sinica,
2009, 58(3): 2072-2076.
doi: 10.7498/aps.58.2072
|
| [12] |
Li Chun, Peng Jun-Biao, Zeng Wen-Jin. Organic red light-emitting diodes with a soluble luminescent compound and a novel TPBI/Ag cathode. Acta Physica Sinica,
2009, 58(3): 1992-1996.
doi: 10.7498/aps.58.1992
|
| [13] |
Chen Jian, Li Xiao-Li, Li Hai-Hua, Wang Qing-Kang. Research of LED light extraction efficiency of photonic crystal with square and hexagonal lattice. Acta Physica Sinica,
2009, 58(9): 6216-6221.
doi: 10.7498/aps.58.6216
|
| [14] |
Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling. Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2008, 57(1): 472-476.
doi: 10.7498/aps.57.472
|
| [15] |
Chang Yan-Ling, Zhang Qi-Feng, Sun Hui, Wu Jin-Lei. Development and behavior study of a ZnO nanowire-based electroluminescence device with double insulating-layer structure. Acta Physica Sinica,
2007, 56(4): 2399-2404.
doi: 10.7498/aps.56.2399
|
| [16] |
Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di. Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica,
2007, 56(10): 6003-6007.
doi: 10.7498/aps.56.6003
|
| [17] |
Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
doi: 10.7498/aps.55.1424
|
| [18] |
Hu Jin, Du Lei, Zhuang Yi-Qi, Bao Jun-Lin, Zhou Jiang. Noise as a representation for reliability of light emitting diode. Acta Physica Sinica,
2006, 55(3): 1384-1389.
doi: 10.7498/aps.55.1384
|
| [19] |
Hou Lin-Tao, Hou Qiong, Peng Jun-Biao, Cao Yong. Performance of polymer light-emitting diodes with saturated red-emitting poly(fluorine-co-4,7-dithien-2-yl-2,1,3-benzothiadiazole-carbazole or triphenylamine). Acta Physica Sinica,
2005, 54(11): 5377-5381.
doi: 10.7498/aps.54.5377
|
| [20] |
SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA. ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica,
2000, 49(7): 1404-1408.
doi: 10.7498/aps.49.1404
|
下载:
