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中国物理学会期刊
Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFETJ. Acta Physica Sinica, 2012, 61(21): 217304. DOI: 10.7498/aps.61.217304
Citation: Chang Hu-Dong, Sun Bing, Lu Li, Zhao Wei, Wang Sheng-Kai, Wang Wen-Xin, Liu Hong-Gang. Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFETJ. Acta Physica Sinica, 2012, 61(21): 217304. DOI: 10.7498/aps.61.217304

    Study on high mobility In0.6Ga0.4As channel MOSHEMT and MOSFET

    CSTR: 32037.14.aps.61.217304
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