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High-mobility In0.6Ga0.4As channel metal oxide semiconductor high electron mobility transistor (MOSHEMT) and metal oxide semiconductor field effect transistor (MOSFET) are investigated based on simulation and experiment in this paper. It is found that InAlAs barrier layer has a great influence on the characteristics of In0.6Ga0.4As MOSHEMT. In0.6Ga0.4As MOSHEMT exhibits excellent electrical characteristics compared with In0.6Ga0.4As MOSFET. The experimental results show that the effective channel mobility of MOSHEMT is 2812 cm2/V·s-1, which is 3.2 times that of MOSFET. A 0.02 mm gate length MOSHEMT shows higher drive current, peak transconductance, Ion/Ioff ratio and gate breakdown voltage and lower sub-threshold swing than the MOSFET with the same gate length.
[1] Wu Y Q, Wang W K, Koybasi O, Zakharov D N, Stach E A, Nakahara S, Hwang J C M, Ye P D 2009 IEEE Electron Dev. Lett. 30 700
[2] Goel N, Majhi P, Chui C O, Tsai W 2006 Appl. Phys. Lett. 89 163517
[3] Morassi L, Padovani A, Verzellesi G, Veksler D, Ok I, Bersuker G 2011 IEEE Trans. Electron Dev. 58 107
[4] Yonai Y, Kanazawa T, Ikeda S, Miyamoto Y 2011 Tech. Dig. Int. Electron Devices Meet. Washington, US, Dec 3-7, 2011 p307
[5] Waldron N, Kim D H, Alamo J A D 2010 IEEE Trans. Electron Dev. 57 297
[6] Xue F, Jiang A, Zhao H, Chen Y T, Wang Y Z, Zhou F, Lee J 2012 IEEE Electron Dev. Lett. 33 32
[7] Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩,郝跃,岳远征 2008 57 1886]
[8] Lin H, Yang T, Sharifi H, Kim S, Xuan Y, Shen T, Mohammadi S, Ye P D 2007 Appl. Phys. Lett. 91 212101
[9] Zhou X, Tang C W, Li Q, Lau K M 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[10] Koomen J 1973 Solid-St. Electron. 16 801
[11] Morassi L, Verzellesi G, Larcher L, Zhao H, Lee J C 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[12] Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE Trans. Electron Dev. 41 2357
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[1] Wu Y Q, Wang W K, Koybasi O, Zakharov D N, Stach E A, Nakahara S, Hwang J C M, Ye P D 2009 IEEE Electron Dev. Lett. 30 700
[2] Goel N, Majhi P, Chui C O, Tsai W 2006 Appl. Phys. Lett. 89 163517
[3] Morassi L, Padovani A, Verzellesi G, Veksler D, Ok I, Bersuker G 2011 IEEE Trans. Electron Dev. 58 107
[4] Yonai Y, Kanazawa T, Ikeda S, Miyamoto Y 2011 Tech. Dig. Int. Electron Devices Meet. Washington, US, Dec 3-7, 2011 p307
[5] Waldron N, Kim D H, Alamo J A D 2010 IEEE Trans. Electron Dev. 57 297
[6] Xue F, Jiang A, Zhao H, Chen Y T, Wang Y Z, Zhou F, Lee J 2012 IEEE Electron Dev. Lett. 33 32
[7] Feng Q, Hao Y, Yue Y Z 2008 Acta Phys. Sin. 57 1886 (in Chinese) [冯倩,郝跃,岳远征 2008 57 1886]
[8] Lin H, Yang T, Sharifi H, Kim S, Xuan Y, Shen T, Mohammadi S, Ye P D 2007 Appl. Phys. Lett. 91 212101
[9] Zhou X, Tang C W, Li Q, Lau K M 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[10] Koomen J 1973 Solid-St. Electron. 16 801
[11] Morassi L, Verzellesi G, Larcher L, Zhao H, Lee J C 2011 Proc. 23th Intern. Conf. on IPRM Berlin, Germany, May 22-26, 2011 p1
[12] Takagi S I, Toriumi A, Iwase M, Tango H 1994 IEEE Trans. Electron Dev. 41 2357
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