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In this paper，combinatorial method was introduced for the first time to disclose the effect of Ni thickness on the Ni/SiC contact properties. Sixteen contacts with the same Ni thickness showed similar Schottky contact properties.The current voltage curves (I-V) were different for the Schottky contacts with different Ni thickness from 10 nm to 160 nm. The effect of the Ni thickness to the ideality factor n and the effective barrier height ФB was found to be the origin of the different Schottky contact properties. After rapid annealed at 1000℃，all the contacts showed good linear I-V curves，which indicated the formation of ohmic contacts. Ni2Si was the main reaction product. Comparing the slopes of the IV curves，the contacts with 30—70 nm Ni showed good ohmic contact properties. The results confirmed our previous conclusion about the key role of appropriate carbon-enriched layer (CEL) for the formation of ohmic contacts on SiC.
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Keywords:
- silicon carbide /
- Schottky contact /
- ohmic contact /
- combinatorial method
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[28] ］Rhoderick E H，Williams R H 1978 Metal-Semiconductor Contacts (Oxford：Clarendon press) p47
[29] ］Roccaforte F，La Via F，Raineri V，Pierobon R，Zanoni E 2003 J. Appl. Phys. 93 9137［30］Im H J，Ding Y，Pelz J P，Choyke W J 2001 Phys. Rev. B 64 075310
-
[1] ［1］Xiang X D，Sun X D，Briceno G，Lou Y L，Wang K A，Chang H Y，Wallacefreedman W G，Chen S W，Schultz P G 1995 Science 268 1738
[2] ［2］Xiang X D 1999 Annu. Rev. Mater. Sci. 29 149
[3] ［3］Danielson E，Golden J H，McFarland E W，Reaves C M，Weinberg W H，Wu X D 1997 Nature 389 944
[4] ［4］van Dover R B，Schneemeyer L D，Fleming R M 1998 Nature 392 162
[5] ［5］Li J W，Duewer F，Gao C，Chang H Y，Xiang X D，Lu Y L 2000 Appl. Phys. Lett. 76 769
[6] ［6］Yoo Y K，Duewer F，Yang H T，Yi D，Li J W，Xiang X D 2000 Nature 406 704
[7] ［7］Treu M，Rupp R，Blaschitz P，Hilsenbeck J 2006 Superlattices and Microstructures 40 380
[8] ［8］Anderson T，Barrett D，Chen J，Emorhokpor E，Gupta A，Hopkins R，Souzis A，Tanner C，Yoganathan M，Zwieback I，Choyke W J，Devaty R P，Yan F 2005 Silicon Carbide and Related Materials 483 9
[9] ［9］Shiomi H，Kinoshita H，Furusho T，Hayashi T，Tajima M，Higashi E 2006 J. Cryst. Growth 292 188
[10] ］Wang S G，Zhang Y M 2003 Chin. Phys. 12 89
[11] ］Lu H L，Zhang Y M，Zhang Y M，Che Y 2008 Chin. Phys. B 17 1410
[12] ］Guo H，Zhang Y M，Qiao D Y，Sun L，Zhang Y M 2007 Chin. Phys. 16 1753
[13] ］Lee J W，Angadi B，Park H C，Park D H，Choi J W，Choi W K，Kim T W 2007 J. Electrochem. Soc. 154 849
[14] ］Basak D，Mahanty S 2003 Mater. Sci. Eng. B-Solid State Mater. Adv. Technol. 98 177
[15] ］Park J H，Holloway P H 2005 J. Vac. Sci. Technol. B 23 2530
[16] ］Crofton J，Porter L M，Williams J R 1997 Phys. Status Solidi B-Basic Res. 202 581
[17] ］Roccaforte F，La Via F，Raineri V，Calcagno L，Musumeci P 2001 Appl. Surf. Sci. 184 295
[18] ］Ervin M H，Jones K A，Lee U，Wood M C 2006 J. Vac. Sci. Technol. B 24 1185
[19] ］Nikitina I P，Vassilevski K V，Wright N G，Horsfall A B，O'Neill A G，Johnson C M 2005 J. Appl. Phys. 97 083709
[20] ］Park J H，Holloway P H 2005 J. Vac. Sci. Technol. B 23 486
[21] ］Nikitina I P，Vassilevski K V，Horsfall A B，Wright N G，O′Neill A G，Johnson C M，Yamamoto T，Malhan R K 2006 Semicond. Sci. Technol. 21 898
[22] ］Huang W，Chen Z Z，Chen B Y，Zhang J Y，Yan C F，Xiao B，Shi E W 2009 Acta Phys. Sin. 58 3443 (in Chinese) ［黄维、陈之战、陈博源、张静玉、严成锋、肖兵、施尔畏 2009 58 3443］
[23] ］Okuno K，Ito T，Iwami M，Hiraki A 1980 Solid State Commun. 34 493
[24] ］Masri P，Langlade P 1981 J. Phys. C-Solid State Phys.14 5379
[25] ］Biber M，Gullu O，Forment S，Van Meirhaeghe R L，Turut A 2006 Semicond. Sci. Technol. 21 1
[26] ］Gullu O，Biber M，Van Meirhaeghe R L，Turut A 2008 Thin Solid Films 516 7851
[27] ］Liu Z L，Shang Y C，Wang S R 2003 Acta Phys. Sin. 52 211 (in Chinese) ［刘忠立、尚也淳、王姝睿 2003 52 211］
[28] ］Rhoderick E H，Williams R H 1978 Metal-Semiconductor Contacts (Oxford：Clarendon press) p47
[29] ］Roccaforte F，La Via F，Raineri V，Pierobon R，Zanoni E 2003 J. Appl. Phys. 93 9137［30］Im H J，Ding Y，Pelz J P，Choyke W J 2001 Phys. Rev. B 64 075310
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