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Zhang Shu-Hao, Yuan Zhang-Yi-An, Qiao Ming, Zhang Bo. Simulation study on radiation hardness for total ionizing dose effect of ultra-thin shielding layer 300 V SOI LDMOS. Acta Physica Sinica,
2022, 71(10): 107301.
doi: 10.7498/aps.71.20220041
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Lin Jian-Xiao, Wu Jiu-Hui, Liu Ai-Qun, Chen Zhe, Lei Hao. A nano-silicon-photonic switch driven by an optical gradient force. Acta Physica Sinica,
2015, 64(15): 154209.
doi: 10.7498/aps.64.154209
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Song Jian-Jun, Yang Chao, Zhu He, Zhang He-Ming, Xuan Rong-Xi, Hu Hui-Yong, Shu Bin. Structure design and frequency characteristics of SOI SiGe HBT. Acta Physica Sinica,
2014, 63(11): 118501.
doi: 10.7498/aps.63.118501
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Xin Yan-Hui, Liu Hong-Xia, Fan Xiao-Jiao, Zhuo Qing-Qing. Two-dimensional analytical model of dual material gate strained Si SOI MOSFET with asymmetric Halo. Acta Physica Sinica,
2013, 62(15): 158502.
doi: 10.7498/aps.62.158502
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Wang Xiao-Wei, Luo Xiao-Rong, Yin Chao, Fan Yuan-Hang, Zhou Kun, Fan Ye, Cai Jin-Yong, Luo Yin-Chun, Zhang Bo, Li Zhao-Ji. Mechanism and optimal design of a high-k dielectric conduction enhancement SOI LDMOS. Acta Physica Sinica,
2013, 62(23): 237301.
doi: 10.7498/aps.62.237301
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Zhou Xin-Jie, Li Lei-Lei, Zhou Yi, Luo Jing, Yu Zong-Guang. Back-gate bias effect on partially depleted SOI/MOS back-gate performances under radiation condition. Acta Physica Sinica,
2012, 61(20): 206102.
doi: 10.7498/aps.61.206102
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Cao Lei, Liu Hong-Xia. Study of the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Acta Physica Sinica,
2012, 61(24): 247303.
doi: 10.7498/aps.61.247303
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Peng Li, Zhuo Qing-Qing, Liu Hong-Xia, Cai Hui-Min. Gate length dependence of SOI NMOS device response to total dose irradiation. Acta Physica Sinica,
2012, 61(24): 240703.
doi: 10.7498/aps.61.240703
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Zhang Bin, Yang Yin-Tang, Li Yue-Jin, Xu Xiao-Bo. Electrical behavior research of silicon-on-insulator SiGe heterojunction bipolar transistor. Acta Physica Sinica,
2012, 61(23): 238502.
doi: 10.7498/aps.61.238502
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Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng. Study on power characteristics of deep sub-micron SOI RF LDMOS. Acta Physica Sinica,
2011, 60(1): 018501.
doi: 10.7498/aps.60.018501
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong. Improved base-collector depletion charge and capacitance model for SiGe HBT on thin-film SOI. Acta Physica Sinica,
2011, 60(11): 118501.
doi: 10.7498/aps.60.118501
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Xu Xiao-Bo, Zhang He-Ming, Hu Hui-Yong, Xu Li-Jun, Ma Jian-Li. A collector space charge region model for SiGe HBT on thin-film SOI. Acta Physica Sinica,
2011, 60(7): 078502.
doi: 10.7498/aps.60.078502
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Yu Zong-Guang, Xiao Zhi-Qiang, Zhou Xin-Jie, Li Lei-Lei. Threshold voltage degradation mechanism of SOI SONOS EEPROM under total-dose irradiation. Acta Physica Sinica,
2011, 60(9): 098502.
doi: 10.7498/aps.60.098502
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Li Jin, Liu Hong-Xia, Li Bin, Cao Lei, Yuan Bo. Threshold voltage analytical model for strained Si SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2010, 59(11): 8131-8136.
doi: 10.7498/aps.59.8131
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Wang Lei, Steve Yang. Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors. Acta Physica Sinica,
2010, 59(1): 571-578.
doi: 10.7498/aps.59.571
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Li Qi, Zhang Bo, Li Zhao-Ji. A new analytical model of breakdown voltage for the SD LDMOS. Acta Physica Sinica,
2008, 57(3): 1891-1896.
doi: 10.7498/aps.57.1891
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong, Wang Jin. The impact of high-k dielectrics on the performance of Schottky barrier source/drain (SBSD) ultra-thin body (UTB) SOI MOSFET. Acta Physica Sinica,
2008, 57(7): 4476-4481.
doi: 10.7498/aps.57.4476
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2008, 57(6): 3807-3812.
doi: 10.7498/aps.57.3807
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Shu Bin, Zhang He-Ming, Zhu Guo-Liang, Fan Min, Xuan Rong-Xi. Fabrication of SOI material based on smart-cut technology. Acta Physica Sinica,
2007, 56(3): 1668-1673.
doi: 10.7498/aps.56.1668
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Zheng Zhong-Shan, Liu Zhong-Li, Zhang Guo-Qiang, Li Ning, Fan Kai, Zhang En-Xia, Yi Wan-Bing, Chen Meng, Wang Xi. Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET. Acta Physica Sinica,
2005, 54(1): 348-353.
doi: 10.7498/aps.54.348
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