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2017, 66(9): 097101.
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2014, 63(14): 148502.
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2014, 63(23): 237302.
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2014, 63(8): 087301.
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2013, 62(15): 158502.
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2012, 61(17): 177201.
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2012, 61(7): 078504.
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Li Li, Liu Hong-Xia, Yang Zhao-Nian. Threshold-voltage and hole-sheet-density model of quantum well Si/SiGe/Si p field effect transistor. Acta Physica Sinica,
2012, 61(16): 166101.
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Li Yu-Chen, Zhang He-Ming, Zhang Yu-Ming, Hu Hui-Yong, Xu Xiao-Bo, Qin Shan-Shan, Wang Guan-Yu. A analytic model for the threshold-voltage of novel high-speed semiconductor device IMOS. Acta Physica Sinica,
2012, 61(4): 047303.
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2012, 61(1): 017105.
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2006, 55(7): 3670-3676.
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