SOI SiGe HBT电学性能研究

张滨; 杨银堂; 李跃进; 徐小波

doi:10.7498/aps.61.238502

摘要

研究了SOI衬底上SiGe npn异质结晶体管的设计优化.给出了器件基本直流交流特性曲线,分析了与常规SiGe HBT的不同.由于SOI衬底的引入使SOI SiGe HBT成为四端器件,重点研究了衬底偏压对Gummel曲线、输出特性曲线以及雪崩电流的影响.最后仿真实现材料物理参数和几何物理参数对频率特性的改变.结果表明SOI SiGe HBT与常规器件相比具有更大的设计自由度. SOI SiGe HBT的系统分析为毫米波SOI SiGe BiCMOS电路的设计提供了有价值的参考.

关键词:

SiGe HBT /
SOI /
电学性能

Abstract

The paper deals with the design optimization of SiGe heterojunction bipolar transistor (HBT) on thin film silicon-on-insulator (SOI). The basic DC and AC current characteristics are obtained and the differences between the SOI and bulk SiGe HBT are analyzed. As the incorporation of SOI substrate makes the SOI SiGe HBT a four-terminal device, the influences of the substrate bias on Gummel plot, output current and avalanche current are studied emphatically. Finally, the physical parameters of material and geometric parameters of the device are discussed by changing the frequency characteristics. Compared with the bulk counterpart, the SOI SiGe HBT is designed and fabricated with a great degree of freedom for better performance. This systematic analysis of SOI SiGe HBT provides a valuable reference for the SOI SiGe BiCMOS circuit design and simulation.

Keywords:

SiGe HBT /
SOI /
electrical performance

作者及机构信息

1.
西安电子科技大学微电子学院,宽禁带半导体材料与器件重点实验室,西安 710071

基金项目: 国家部委预研基金项目(批准号: 51308030201, 9140A080509DZ0106)资助的课题.

Authors and contacts

1.
Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

Funds: Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (Grant Nos. 51308030201, 9140A080509DZ0106).

参考文献

[1]	Cressler J, Niu G 2003 Silicon-Germanium Heterojunction Bipolar Transistors (London: Artech House) p12
[2]	Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Transactions Nuclear Science 35 1099
[3]	Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada T 2002 IEEE Transactions on Electron Devices 49 271
[4]	Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Transactions Electron Devices 46 1332
[5]	Sato F, Hashimoto T, Tatsumi T, Tashiro T 1995 IEEE Transactions on Electron Devices 42 483
[6]	Sugiyama M, Shimizu T, Takemura H, Yoshino A, Oda N, Tashiro T, Minato Y, Takahashi Y, Nakamae M 1989 1989 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.89CH2694-8) Tokyo, Japan 22-25 May 1989 p59
[7]	Cai J, Ajmera A, Ouyang C, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T 2002 VLSI Technology, 2002. Digest of Technical Papers 2002 p172
[8]	Ouyang Q C, Cai J, Ning T, Oldiges P, Johnson J B 2002 Bipolar/BiCMOS Circuits and Technology Meeting 2002 p28
[9]	Bellini M, Cressler J D, Jin C 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE September 30 2007-October 2, 2007 p234
[10]	Jin C, Ning T H 2004 Solid-State and Integrated Circuits Technology, 2004 Proceedings, 7th International Conference Oct. 18-21 2004 p2102
[11]	Tianbing C, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Qingqing L, Cressler J D, Jin C, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353
[12]	Bellini M, Tianbing C, Chendong Z, Cressler J D, Jin C 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006 Oct. 8-10 2006 p1
[13]	Qiqing O, Kai X 2005 Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference Sept. 01-03 2005 p55
[14]	Tianhing C, Bellini M, Zhao E, Comeau J P, Sutton A K, Grens C M, Cressler J D, Jin C, Ning T H 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Oct. 9-11 2005 p256
[15]	Bellini M, Jun B, Chen T, Cressler J D, Marshall P W, Chen D, Schrimpf R D, Fleetwood D M, Cai J 2006 IEEE Transactions on Nuclear Science 53 3182
[16]	Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005 Oct. 9-11 2005 p128
[17]	Boissonnet L, Judong F, Vandelle B, Rubaldo L, Bouillon P, Dutartre D, Perrotin A, Avenier G, Chevalier P, Chantre A, Rauber B 2006 Bipolar/BiCMOS Circuits and Technology Meeting 2006 Oct. 8-10 2006 p1
[18]	Chantre A, Avenier G, Chevalier P, Vandelle B, Saguin F, Maneux C, Dutartre D, Zimmer T 2006 Third International SiGe Technology and Device Meeting, ISTDM 2006. p1
[19]	Duvernay J, Brossard F, Borot G, Boissonnet L, Vandelle B, Rubaldo L, Deleglise F, Avenier G, Chevalier P, Rauber B, Dutartre D, Chantre A 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE Sept. 30-Oct. 2 2007 p34
[20]	Bellini M, Phillips S D, Diestelhorst R M, Cheng P, Cressler J D, Marshall P W, Turowski M, Avenier G, Chantre A, Chevalier P 2008 IEEE Transactions on Nuclear Science 55 3197
[21]	Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585
[22]	Peng C, Seth S, Cressler J D, Cestra G, Krakowski T, Babcock J A, Buchholz A 2011 IEEE Transactions on Electron Devices 58 2573
[23]	Hermann P, Hecker M, Renn F, Rlke M, Kolanek K, Rinderknecht J, Eng L M 2011 J. Appl. Phys. 109
[24]	Babcock J A, Sadovnikov A, Choi L J, van Noort W, Allard P, Cestra G 2011 2011 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, Atlanta, GA, United states Oct. 9, -Oct. 11, 2011 p9
[25]	Xu X B, Zhang H M, Hu H Y, Xu L J, Ma J L 2011 Acta Phys. Sin. 60 078502 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇, 许立军, 马建立 2011 60 078502]
[26]	Xu X B, Zhang H M, Hu H Y, Qu J T 2011 Chin. Phys. B 20 058503
[27]	Xu X B, Zhang H M, Hu H Y, Ma J L, Xu L J 2011 Chin. Phys. B 20 018502
[28]	Xu X B, Zhang H M, Hu H Y, Ma J L 2011 Chin. Phys. B 20 058502
[29]	Xu X B, Zhang H M, Hu H Y, Li Y C, Qu J T 2011 Chin. Phys. B 20 108502
[30]	Xu X B, Zhang H M 2011 Chin. Phys. Lett. 28 078505
[31]	Xu X B, Xu K X, Zhang H M, Qin S S 2011 Chin. Phys. B 20 098501
[32]	Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T 2006 IEEE Transactions on Electron Devices 53 296
[33]	Kroemer H 1985 Solid-State Electronics 28 1101
[34]	Slotboom J W, Graaff H C 1977 IEEE Transactions on Electron Devices 24 1123
[35]	Fossum J G, Lee D S 1982 Solid-State Electronics 25 741
[36]	Fossum J G, Mertens R P, Lee D S, Nijs J F 1983 Solid-State Electronics 26 569
[37]	Klaassen D B M 1992 Solid-State Electronics 35 953

施引文献

[1]	Cressler J, Niu G 2003 Silicon-Germanium Heterojunction Bipolar Transistors (London: Artech House) p12
[2]	Fleetwood D M, Thome F V, Tsao S S, Dressendorfer P V, Dandini V J, Schwank J R 1988 IEEE Transactions Nuclear Science 35 1099
[3]	Washio K, Ohue E, Shimamoto H, Oda K, Hayami R, Kiyota Y, Tanabe M, Kondo M, Hashimoto T, Harada T 2002 IEEE Transactions on Electron Devices 49 271
[4]	Sato F, Hashimoto T, Tezuka H, Soda M, Suzaki T, Tatsumi T, Tashiro T 1999 IEEE Transactions Electron Devices 46 1332
[5]	Sato F, Hashimoto T, Tatsumi T, Tashiro T 1995 IEEE Transactions on Electron Devices 42 483
[6]	Sugiyama M, Shimizu T, Takemura H, Yoshino A, Oda N, Tashiro T, Minato Y, Takahashi Y, Nakamae M 1989 1989 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.89CH2694-8) Tokyo, Japan 22-25 May 1989 p59
[7]	Cai J, Ajmera A, Ouyang C, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G, Ning T 2002 VLSI Technology, 2002. Digest of Technical Papers 2002 p172
[8]	Ouyang Q C, Cai J, Ning T, Oldiges P, Johnson J B 2002 Bipolar/BiCMOS Circuits and Technology Meeting 2002 p28
[9]	Bellini M, Cressler J D, Jin C 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE September 30 2007-October 2, 2007 p234
[10]	Jin C, Ning T H 2004 Solid-State and Integrated Circuits Technology, 2004 Proceedings, 7th International Conference Oct. 18-21 2004 p2102
[11]	Tianbing C, Sutton A K, Bellini M, Haugerud B M, Comeau J P, Qingqing L, Cressler J D, Jin C, Ning T H, Marshall P W, Marshall C J 2005 IEEE Transactions on Nuclear Science 52 2353
[12]	Bellini M, Tianbing C, Chendong Z, Cressler J D, Jin C 2006 Bipolar/BiCMOS Circuits and Technology Meeting, 2006 Oct. 8-10 2006 p1
[13]	Qiqing O, Kai X 2005 Simulation of Semiconductor Processes and Devices, 2005. SISPAD 2005. International Conference Sept. 01-03 2005 p55
[14]	Tianhing C, Bellini M, Zhao E, Comeau J P, Sutton A K, Grens C M, Cressler J D, Jin C, Ning T H 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005. Oct. 9-11 2005 p256
[15]	Bellini M, Jun B, Chen T, Cressler J D, Marshall P W, Chen D, Schrimpf R D, Fleetwood D M, Cai J 2006 IEEE Transactions on Nuclear Science 53 3182
[16]	Avenier G, Schwartzmann T, Chevalier P, Vandelle B, Rubaldo L, Dutartre D, Boissonnet L, Saguin F, Pantel R, Fregonese S, Maneux C, Zimmer T, Chantre A 2005 Bipolar/BiCMOS Circuits and Technology Meeting, 2005 Oct. 9-11 2005 p128
[17]	Boissonnet L, Judong F, Vandelle B, Rubaldo L, Bouillon P, Dutartre D, Perrotin A, Avenier G, Chevalier P, Chantre A, Rauber B 2006 Bipolar/BiCMOS Circuits and Technology Meeting 2006 Oct. 8-10 2006 p1
[18]	Chantre A, Avenier G, Chevalier P, Vandelle B, Saguin F, Maneux C, Dutartre D, Zimmer T 2006 Third International SiGe Technology and Device Meeting, ISTDM 2006. p1
[19]	Duvernay J, Brossard F, Borot G, Boissonnet L, Vandelle B, Rubaldo L, Deleglise F, Avenier G, Chevalier P, Rauber B, Dutartre D, Chantre A 2007 Bipolar/BiCMOS Circuits and Technology Meeting, 2007. BCTM '07. IEEE Sept. 30-Oct. 2 2007 p34
[20]	Bellini M, Phillips S D, Diestelhorst R M, Cheng P, Cressler J D, Marshall P W, Turowski M, Avenier G, Chantre A, Chevalier P 2008 IEEE Transactions on Nuclear Science 55 3197
[21]	Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T, Chantre A 2008 IEEE Transactions on Electron Devices 55 585
[22]	Peng C, Seth S, Cressler J D, Cestra G, Krakowski T, Babcock J A, Buchholz A 2011 IEEE Transactions on Electron Devices 58 2573
[23]	Hermann P, Hecker M, Renn F, Rlke M, Kolanek K, Rinderknecht J, Eng L M 2011 J. Appl. Phys. 109
[24]	Babcock J A, Sadovnikov A, Choi L J, van Noort W, Allard P, Cestra G 2011 2011 25th IEEE Bipolar/BiCMOS Technology and Circuits Meeting, BCTM 2011, Atlanta, GA, United states Oct. 9, -Oct. 11, 2011 p9
[25]	Xu X B, Zhang H M, Hu H Y, Xu L J, Ma J L 2011 Acta Phys. Sin. 60 078502 (in Chinese) [徐小波, 张鹤鸣, 胡辉勇, 许立军, 马建立 2011 60 078502]
[26]	Xu X B, Zhang H M, Hu H Y, Qu J T 2011 Chin. Phys. B 20 058503
[27]	Xu X B, Zhang H M, Hu H Y, Ma J L, Xu L J 2011 Chin. Phys. B 20 018502
[28]	Xu X B, Zhang H M, Hu H Y, Ma J L 2011 Chin. Phys. B 20 058502
[29]	Xu X B, Zhang H M, Hu H Y, Li Y C, Qu J T 2011 Chin. Phys. B 20 108502
[30]	Xu X B, Zhang H M 2011 Chin. Phys. Lett. 28 078505
[31]	Xu X B, Xu K X, Zhang H M, Qin S S 2011 Chin. Phys. B 20 098501
[32]	Fregonese S, Avenier G, Maneux C, Chantre A, Zimmer T 2006 IEEE Transactions on Electron Devices 53 296
[33]	Kroemer H 1985 Solid-State Electronics 28 1101
[34]	Slotboom J W, Graaff H C 1977 IEEE Transactions on Electron Devices 24 1123
[35]	Fossum J G, Lee D S 1982 Solid-State Electronics 25 741
[36]	Fossum J G, Mertens R P, Lee D S, Nijs J F 1983 Solid-State Electronics 26 569
[37]	Klaassen D B M 1992 Solid-State Electronics 35 953

[1]	李梦荣, 应鹏展, 李勰, 崔教林. 采用熵工程技术改善SnTe基材料的热电性能. , 2022, 71(23): 237302. doi: 10.7498/aps.71.20221247
[2]	刘泳, 徐志军, 范立群, 伊文涛, 闫春燕, 马杰, 王坤鹏. 多效应铌酸钾钠基透明铁电陶瓷的制备及性能. , 2020, 69(24): 247702. doi: 10.7498/aps.69.20201317
[3]	张亚菊, 谢忠帅, 郑海务, 袁国亮. Au-BiFeO₃纳米复合薄膜的电学和光伏性能优化. , 2020, 69(12): 127709. doi: 10.7498/aps.69.20200309
[4]	张娜, 刘波, 林黎蔚. He离子辐照对石墨烯微观结构及电学性能的影响. , 2020, 69(1): 016101. doi: 10.7498/aps.69.20191344
[5]	李勇, 王应, 李尚升, 李宗宝, 罗开武, 冉茂武, 宋谋胜. 硼硫协同掺杂金刚石的高压合成与电学性能研究. , 2019, 68(9): 098101. doi: 10.7498/aps.68.20190133
[6]	宋建军, 杨超, 朱贺, 张鹤鸣, 宣荣喜, 胡辉勇, 舒斌. SOI SiGe HBT结构设计及频率特性研究. , 2014, 63(11): 118501. doi: 10.7498/aps.63.118501
[7]	王峰浩, 胡晓君. 氧离子注入微晶金刚石薄膜的微结构与光电性能研究. , 2013, 62(15): 158101. doi: 10.7498/aps.62.158101
[8]	张振江, 胡小会, 孙立涛. 单空位缺陷诱导的扶手椅型石墨烯纳米带电学性能的转变. , 2013, 62(17): 177101. doi: 10.7498/aps.62.177101
[9]	张强, 朱小红, 徐云辉, 肖云军, 高浩濒, 梁大云, 朱基亮, 朱建国, 肖定全. Mn4+掺杂对BiFeO3陶瓷微观结构和电学性能的影响研究. , 2012, 61(14): 142301. doi: 10.7498/aps.61.142301
[10]	胡辉勇, 舒钰, 张鹤鸣, 宋建军, 宣荣喜, 秦珊珊, 屈江涛. 含有本征SiGe层的SiGe异质结双极晶体管集电结耗尽层宽度模型. , 2011, 60(1): 017303. doi: 10.7498/aps.60.017303
[11]	李蕾蕾, 于宗光, 肖志强, 周昕杰. SOI SONOS EEPROM 总剂量辐照阈值退化机理研究. , 2011, 60(9): 098502. doi: 10.7498/aps.60.098502
[12]	肖盈, 张万荣, 金冬月, 陈亮, 王任卿, 谢红云. 能带工程对射频功率SiGe异质结双极晶体管热性能的改善. , 2011, 60(4): 044402. doi: 10.7498/aps.60.044402
[13]	徐小波, 张鹤鸣, 胡辉勇. 薄膜SOI上SiGe HBT集电结耗尽电荷和电容改进模型. , 2011, 60(11): 118501. doi: 10.7498/aps.60.118501
[14]	徐小波, 张鹤鸣, 胡辉勇, 许立军, 马建立. SOI部分耗尽SiGe HBT集电结空间电荷区模型. , 2011, 60(7): 078502. doi: 10.7498/aps.60.078502
[15]	姜雪宁, 王昊, 马小叶, 孟宪芹, 张庆瑜. 蓝宝石衬底上Gd2O3掺杂CeO2氧离子导体电解质薄膜的生长及电学性能. , 2008, 57(3): 1851-1856. doi: 10.7498/aps.57.1851
[16]	乔明, 张波, 李肇基, 方健, 周贤达. 背栅效应对SOI横向高压器件击穿特性的影响. , 2007, 56(7): 3990-3995. doi: 10.7498/aps.56.3990
[17]	王林军, 刘健敏, 苏青峰, 史伟民, 夏义本. 金刚石膜α粒子探测器的电学性能研究. , 2006, 55(5): 2518-2522. doi: 10.7498/aps.55.2518
[18]	胡辉勇, 张鹤鸣, 吕懿, 戴显英, 侯慧, 区健锋, 王伟, 王喜嫒. SiGe HBT大信号等效电路模型. , 2006, 55(1): 403-408. doi: 10.7498/aps.55.403
[19]	郑中山, 刘忠立, 张国强, 李宁, 范楷, 张恩霞, 易万兵, 陈猛, 王曦. 埋氧层注氮工艺对部分耗尽SOI nMOSFET特性的影响. , 2005, 54(1): 348-353. doi: 10.7498/aps.54.348
[20]	吕　懿, 张鹤鸣, 戴显英, 胡辉勇, 舒　斌. SiGe HBT势垒电容模型. , 2004, 53(9): 3239-3244. doi: 10.7498/aps.53.3239

计量

文章访问数: 9938
PDF下载量: 752
被引次数: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板