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A large signal equivalent circuit model of SOI LDMOS is proposed. Power gain and power-added efficiency of n-type LDMOS are modeled. Deep sub-micron SOI LDMOS was fabricated and measured. We investigated the dependence of SOI LDMOS power characteristics on channel length, single gate finger width, supply voltage and working frequency. Power gain and power-added efficiency are increased by 44％ and 9％, respectively, with channel length reduction from 0.5 μm to 0.35 μm. When single gate finger width is increased from 20 μm to 40 μm, power gain and power-added efficiency of 600 μm /0.5 μm device are decreased by 23％ and 9.3％, respectively. Power-gain and power-added efficiency are increased by 13％ and 5.5％, respectively, with supply voltage increased from 3 V to 5 V. When the working frequency is increased from 2.5 GHz to 3.0 GHz, power gain and power added efficiency of LDMOS are decreased by 15％ and 4.5％, respectively.
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Keywords:
- SOI RF LDMOS /
- deep sub-micron /
- power gain /
- power-added efficiency
[1] Ajmera A, Sleight J W, Assaderaghi F 1999 Proceedings Symposium VLSI Technology 15
[2] Nakagawa A, Yasuhara N, Omura I 1992 IEDM 229
[3] Van Rijs F, Visser H A, Magnee P H C 1998 IEDM 957
[4] Raskin J P, Viviani A, Flandre D 1997 IEEE Trans Electron Devices 44 2252
[5] Matsumoto S, Hiraoka H, Sakai T 2001 IEEE Trans Electron Devices 48 1251
[6] Qiao M, Zhang B, Li Z J 2007 Acta. Phys. Sin. 56 3990 (in Chinese) [乔 明、 张 波、 李肇基 2007 56 3990]
[7] Lu L S, Sun Z L, Sun W F 2005 Chinese Journal of Semiconductors 26 2286 (in Chinese) [陆生礼、 孙智林、 孙伟锋 2005 半导体学报 26 2286]
[8] Luo X R, Li Z J, Zhang B 2006 Chinese Journal of Semiconductors 27 881 (in Chinese) [罗小蓉、 李肇基、 张 波 2006 半导体学报 27 881] 〖9] Duan B X, Zhang B, Li Z J 2006 Chinese Journal of Semiconductors 27 1814 (in Chinese) [段宝兴、 张 波、 李肇基 2006 半导体学报 27 1814]
[9] Wang L, Yang H Y 2010 Acta. Phys. Sin. 59 571 (in Chinese) [乔 明、 张 波、 李肇基等 2010 59 571]
[10] Duan B X, Zhang B, Li Z J 2007 Chin. Phys. 16 3754
[11] Li Q, Zhang B, Li Z J 2008 Acta. Phys. Sin. 57 6565 (in Chinese) [李 琦、 张 波、 李肇基 2008 57 6565]
[12] Ouisse T, Cristoloveanu S, Borel G 1992 Solid-State Electronics 141
[13] Muller D, Giry A, Judong F 2007 IEEE Trans Electron Devices 54 861
[14] Yang R, Li J F, Qian H 2006 IEEE Electron Device Letters 27 917
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[1] Ajmera A, Sleight J W, Assaderaghi F 1999 Proceedings Symposium VLSI Technology 15
[2] Nakagawa A, Yasuhara N, Omura I 1992 IEDM 229
[3] Van Rijs F, Visser H A, Magnee P H C 1998 IEDM 957
[4] Raskin J P, Viviani A, Flandre D 1997 IEEE Trans Electron Devices 44 2252
[5] Matsumoto S, Hiraoka H, Sakai T 2001 IEEE Trans Electron Devices 48 1251
[6] Qiao M, Zhang B, Li Z J 2007 Acta. Phys. Sin. 56 3990 (in Chinese) [乔 明、 张 波、 李肇基 2007 56 3990]
[7] Lu L S, Sun Z L, Sun W F 2005 Chinese Journal of Semiconductors 26 2286 (in Chinese) [陆生礼、 孙智林、 孙伟锋 2005 半导体学报 26 2286]
[8] Luo X R, Li Z J, Zhang B 2006 Chinese Journal of Semiconductors 27 881 (in Chinese) [罗小蓉、 李肇基、 张 波 2006 半导体学报 27 881] 〖9] Duan B X, Zhang B, Li Z J 2006 Chinese Journal of Semiconductors 27 1814 (in Chinese) [段宝兴、 张 波、 李肇基 2006 半导体学报 27 1814]
[9] Wang L, Yang H Y 2010 Acta. Phys. Sin. 59 571 (in Chinese) [乔 明、 张 波、 李肇基等 2010 59 571]
[10] Duan B X, Zhang B, Li Z J 2007 Chin. Phys. 16 3754
[11] Li Q, Zhang B, Li Z J 2008 Acta. Phys. Sin. 57 6565 (in Chinese) [李 琦、 张 波、 李肇基 2008 57 6565]
[12] Ouisse T, Cristoloveanu S, Borel G 1992 Solid-State Electronics 141
[13] Muller D, Giry A, Judong F 2007 IEEE Trans Electron Devices 54 861
[14] Yang R, Li J F, Qian H 2006 IEEE Electron Device Letters 27 917
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