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Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors

Wang Lei Steve Yang

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Analysis and modeling of quasi-saturation effect in high-voltage LDMOS transistors

Wang Lei, Steve Yang
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  • Abstract views:  12939
  • PDF Downloads:  2140
  • Cited By: 0
Publishing process
  • Received Date:  10 April 2009
  • Accepted Date:  01 June 2009
  • Published Online:  15 January 2010

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