-
本文主要研究考虑量子效应的高k栅介质SOI MOSFET器件特性. 通过数值方法自洽求解薛定谔方程和泊松方程, 得到了垂直于SiO2/Si界面方向上载流子波函数及能级的分布情况, 结合Young模型, 在考虑短沟道效应和高k栅介质的情况下, 对SOI MOSFET的阈值电压进行模拟分析. 结果表明: 随着纵向电场的增加, 量子化效应致使反型层载流子分布偏离表面越来越严重, 造成了有效栅氧化层厚度的增加和阈值电压波动. 采用高k栅介质材料, 可以减小阈值电压, 抑制DIBL效应. 较快的运算速度保证了模拟分析的效率, 计算结果和ISE仿真结果的符合说明了本文的模型精度高.
-
关键词:
- 量子化效应 /
- 高k 材料 /
- SOI MOSFET /
- 阈值电压
In the paper, we mainly investigate the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Self-consistent solutions of Schrdinger and Poisson equation are solved in this paper to obtain carrier wave function in the directiong perpendicular to the SiO2/Si interface and energy level distribution. Based on Young model, the threshold voltage and short-channel effects of SOI MOSFET with high-k gate dielectric are simulated and analyzed. The carrier distribution in inversion layer deviates from the surface with the increase of longitudinal electric field, which is caused by quantum effect. It increases the thickness of effective gate oxide and fluctuation of threshold voltage. Meanwhile, high-k gate dielectric materials can reduce the threshold voltage and restrain the DIBL efficiently. The calculation results matching ISE simulation results show that the model has a high-level accuracy, and faster operation ensures the efficiency of the simulation analysis.-
Keywords:
- quantum effect /
- high-K material /
- SOI MOSFET /
- threshold voltage
[1] Li C, Zhuang Y Q, Zhang L, Bao J L 2012 Chin. Phys. B 21 048501
[2] Chaudhry A, Kummer M J 2004 IEEE Trans. on Devices Mater. Rel. 4 99
[3] Coling J P 1993 Silicon-on-Insulator Technology. (Boston: Kluwer Academic publishers) p5
[4] Hirosh Iwai 2004 Solid-State Electronics. 48 497
[5] Meind J D, Chen Q, Davis J A 2001 Science 293 2044
[6] Depas M, Ngarn T, Heyns M M 1996 IEEE Trans. Electron Devices 43 1499
[7] Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李进, 刘红侠, 李斌, 曹磊 2010 59 8131]
[8] Goser K, Glosekotter P, Dienstuhl J 2004 Germany. Springer-Verlag Berlin Heidelberg.
[9] Ma F, Liu H X, Kuang Q W, Fan J B 2012 Chin. Phys. B 21 057304
[10] Onishi K, Choi R, Kang C S, Cho H J, Kim Y H, Nieh R E, Han J, Krishnan S A, Akbar M S, Lee J C 2003 IEEE Trans. Electron Devices. 50 1517
[11] [刘恩科, 朱秉升, 罗晋生 1997 半导体物理学(第4版) (北京: 国防工业出版社) 第53页]
[12] Schwarz S A, Russek S E 1983 IEEE Trans. Electron Devices 30 1634
[13] Yu Z P, Robert W D, Richard A K 2000 IEEE Trans. Electron Devices 47 1819
[14] Bryan A, Biegel, Mario G, Ancana, Conor S, Rafferty 2004 NAS Technical Report. NAS-04008
-
[1] Li C, Zhuang Y Q, Zhang L, Bao J L 2012 Chin. Phys. B 21 048501
[2] Chaudhry A, Kummer M J 2004 IEEE Trans. on Devices Mater. Rel. 4 99
[3] Coling J P 1993 Silicon-on-Insulator Technology. (Boston: Kluwer Academic publishers) p5
[4] Hirosh Iwai 2004 Solid-State Electronics. 48 497
[5] Meind J D, Chen Q, Davis J A 2001 Science 293 2044
[6] Depas M, Ngarn T, Heyns M M 1996 IEEE Trans. Electron Devices 43 1499
[7] Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李进, 刘红侠, 李斌, 曹磊 2010 59 8131]
[8] Goser K, Glosekotter P, Dienstuhl J 2004 Germany. Springer-Verlag Berlin Heidelberg.
[9] Ma F, Liu H X, Kuang Q W, Fan J B 2012 Chin. Phys. B 21 057304
[10] Onishi K, Choi R, Kang C S, Cho H J, Kim Y H, Nieh R E, Han J, Krishnan S A, Akbar M S, Lee J C 2003 IEEE Trans. Electron Devices. 50 1517
[11] [刘恩科, 朱秉升, 罗晋生 1997 半导体物理学(第4版) (北京: 国防工业出版社) 第53页]
[12] Schwarz S A, Russek S E 1983 IEEE Trans. Electron Devices 30 1634
[13] Yu Z P, Robert W D, Richard A K 2000 IEEE Trans. Electron Devices 47 1819
[14] Bryan A, Biegel, Mario G, Ancana, Conor S, Rafferty 2004 NAS Technical Report. NAS-04008
计量
- 文章访问数: 7132
- PDF下载量: 891
- 被引次数: 0
下载:
