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2021, 70(14): 148501.
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Xu Huo-Xi, Xu Jing-Ping. Electrical properties of LaTiO high-k gate dielectric Ge MOS Capacitor and Ti content optimization. Acta Physica Sinica,
2016, 65(3): 037301.
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2013, 62(23): 237301.
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Xu Li-Jun, Zhang He-Ming. Drain-induced barrier-lowering effect in surrounding-gate schottky barrier metal-oxide semiconductor field transistor. Acta Physica Sinica,
2013, 62(10): 108502.
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2011, 60(2): 027102.
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2009, 58(1): 494-497.
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2008, 57(7): 4482-4486.
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Luan Su-Zhen, Liu Hong-Xia, Jia Ren-Xu, Cai Nai-Qiong. 2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric. Acta Physica Sinica,
2008, 57(6): 3807-3812.
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2005, 54(12): 5901-5906.
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2003, 52(10): 2553-2557.
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LIN HONG-YI. AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS. Acta Physica Sinica,
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